Broadband antireflection TiO 2 –SiO 2 stack coatings with refractive-index-grade structure and their applications to Cu(In,Ga)Se 2 solar cells

2014 ◽  
Vol 130 ◽  
pp. 505-512 ◽  
Author(s):  
Dezeng Li ◽  
Dongyun Wan ◽  
Xiaolong Zhu ◽  
Yaoming Wang ◽  
Zhen Han ◽  
...  
Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4421
Author(s):  
Ángela Barreda ◽  
Pablo Albella ◽  
Fernando Moreno ◽  
Francisco González

High refractive index dielectric (HRID) nanoparticles are a clear alternative to metals in nanophotonic applications due to their low losses and directional scattering properties. It has been demonstrated that HRID dimers are more efficient scattering units than single nanoparticles in redirecting the incident radiation towards the forward direction. This effect was recently reported and is known as the “near zero-backward” scattering condition, attained when nanoparticles forming dimers strongly interact with each other. Here, we analyzed the electromagnetic response of HRID isolated nanoparticles and aggregates when deposited on monolayer and graded-index multilayer dielectric substrates. In particular, we studied the fraction of radiation that is scattered towards a substrate with known optical properties when the nanoparticles are located on its surface. We demonstrated that HRID dimers can increase the radiation emitted towards the substrate compared to that of isolated nanoparticles. However, this effect was only present for low values of the substrate refractive index. With the aim of observing the same effect for silicon substrates, we show that it is necessary to use a multilayer antireflection coating. We conclude that dimers of HRID nanoparticles on a graded-index multilayer substrate can increase the radiation scattered into a silicon photovoltaic wafer. The results in this work can be applied to the design of novel solar cells.


2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Rajkamal Sivakumar ◽  
Prabhakaran Gopalakrishnan ◽  
Mohamed Sikkander Abdul Razak

Purpose Photon absorbance and reflectance are the most important parameters for the recombination of electron-hole pairs. Bandgap energy plays a vital role in photon absorption. That is, the photons with energy greater than band gap energy are absorbed. Also, the refractive index of semiconductors is responsible for photon reflection, as the surface with the highest refractive index will reflect more photons than a surface with have a low refractive index. The purpose of this paper is to improvise the absorbance and reduce the reflectance of photons on the front surface of solar cells. Design/methodology/approach Photon reflection is results in reduction in electron-hole pair generation due to the high refractive index of semiconductive materials. To overcome this problem, an Anti-reflection (AR) coating of TiO2 and SiO2 is undertaken on solar cells through the Sol-spin coating method. Finally, the effectiveness of the Anti-Reflection coating is scrutinized through UV Vis-Spectroscopy, which provides details regarding reflectance, absorbance and bandgap energy characteristics. Findings UV–visible spectroscopy was used to measure the responses from the samples. The samples responded to the ultraviolet and visible range of electromagnetic radiation perfectly. UV spectroscopy was done before and after the antireflection coating of TiO2 and SiO2 over the solar cell to find their corresponding extreme reflectance and absorbance values. The effects of TiO2 and SiO2 were evaluated from the results. Originality/value In this research work, the authors have done anti-reflection coating over solar cells with nanoparticles derived from sol-gel process. Absorbance of photons observed through diffuse reflection method.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Xinyi Zheng ◽  
Yadong Wei ◽  
Kaijuan Pang ◽  
Ngeywo Kaner Tolbert ◽  
Dalin Kong ◽  
...  

Abstract By first-principles calculations, we investigate the geometric stability, electronic and optical properties of the type-II PN-WSe2 and type-I PAs-WSe2 van der Waals heterostructures(vdWH). They are p-type semiconductors with indirect band gaps of 1.09 eV and 1.08 eV based on PBE functional respectively. By applying the external gate field, the PAs-WSe2 heterostructure would transform to the type-II band alignment from the type-I. With the increasing of magnitude of the electric field, two heterostructures turn into the n-type semiconductors and eventually into metal. Especially, PN/PAs-WSe2 vdWH are both high refractive index materials at low frequencies and show negative refractive index at high frequencies. Because of the steady absorption in ultraviolet region, the PAs-WSe2 heterostructure is a highly sensitive UV detector material with wide spectrum. The type-II PN-WSe2 heterostructure possesses giant and broadband absorption in the near-infrared and visible regions, and its solar power conversion efficiency of 13.8% is higher than the reported GaTe–InSe (9.1%), MoS2/p-Si (5.23%) and organic solar cells (11.7%). It does project PN-WSe2 heterostructure a potential for application in excitons-based solar cells.


2013 ◽  
Vol 827 ◽  
pp. 49-53 ◽  
Author(s):  
Qi Wang ◽  
Hai Na Mo ◽  
Zi Qiao Lou ◽  
Ke Meng Yang ◽  
Yue Sun ◽  
...  

We have designed lateral contact thin film silicon-based solar cells with and without one-dimensional photonic crystals as back surface field layer. The photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light. Simulations demonstrate that energy conversion efficiency and short circuit current ISCfor c-Si solar cells with the photonic crystal structure are increased to 21.11% and 27.0 mA, respectively, from 18.33% and 22.8mA of the one without photonic crystal. In addition, the effects of DBRs consisting of different materials are investigated in our simulations. When the refractive index difference between sub-layers of the DBR is larger, the forbidden band width is broader, the reflectance of the DBR is higher, and more photons are reflected and trapped into the active region, then the absorption efficiency and the energy conversion efficiency of the solar cell are both increased. The bigger the refractive index difference of the DBRs sub-layers is, the broader the forbidden band width is. In addition, a-Si solar cells with and without DBR are also discussed.


2010 ◽  
Vol 1245 ◽  
Author(s):  
Corsin Battaglia ◽  
Jordi Escarre ◽  
Karin Söderström ◽  
Franz-Josef Haug ◽  
Didier Dominé ◽  
...  

AbstractWe investigate the influence of refractive index contrast on the light scattering properties of nanotextured interfaces, which serve as front contact for p-i-n thin-film silicon solar cells. We here focus on ZnO surfaces with randomly oriented pyramidal features, known for their excellent light trapping performance. Transparent replicas, with a different refractive index, but practically identical morphology compared to their ZnO masters, were fabricated via nanoimprinting. Within the theoretical framework we recently proposed, we show how the angular and spectral dependence of light scattered by nanostructures with identical morphology but different refractive index may be related to each other allowing direct comparison of their light trapping potential within the device.


2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Atikur Rahman ◽  
Ahsan Ashraf ◽  
Huolin Xin ◽  
Xiao Tong ◽  
Peter Sutter ◽  
...  

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