scholarly journals Preparation of High Ga Content Cu(In,Ga)Se<sub>2</sub> Thin Films by Sequential Evaporation Process Added In<sub>2</sub>S<sub>3</sub>

2012 ◽  
Vol 02 (04) ◽  
pp. 106-109
Author(s):  
Toshiyuki Yamaguchi ◽  
Kazuma Tsujita ◽  
Shigetoshi Niiyama ◽  
Toshito Imanishi
2013 ◽  
Vol 113 (6) ◽  
pp. 064907 ◽  
Author(s):  
M. M. Islam ◽  
A. Uedono ◽  
T. Sakurai ◽  
A. Yamada ◽  
S. Ishizuka ◽  
...  

1999 ◽  
Vol 77 (7) ◽  
pp. 515-520
Author(s):  
AAI Al-Bassam

Thin film polycrystalline solar cells based on CuIn1–xGaxSe2 have been fabricated and studied with x values from 0 to 1.0. The lattice parameters, grain size, and band gap were measured. Crystal structure and X-ray data of CuIn1–xGaxSe2 were determined using X-ray diffractometry. These materials had a cubic structure with x ≥ 0.5 and a tetragonal structure with x ≤ 0.5. The lattice constants vary linearly with composition. Grain size was measured using X-ray diffraction where the grain size increased linearly with Ga content. A grain size of 1.83-3.52 μm was observed with x ≤ 0.5, while it increased to 4.53 μm for x = 0.58.PACS No.: 70.73


Author(s):  
G. G. Paulson ◽  
R. E. Ferrell

In such fields as electronics and optics, the sputtering process is rapidly displacing the conventional evaporation process. Its major advantage is the ability to deposit a variety of refractory metals and dielectric materials with good control and reproducibility. This advantage and numerous others are valid reasons why sputtering may eventually displace thermal evaporation in the typical electron microscope laboratory. Sputtering is readily adapted to the procedures utilized in TEM, however, the following discussion highlights the advantages of sputtering for applying coatings to specimens for SEM.Sputtering is not a new concept. Numerous papers and books had been published before 1900 concerning the use of sputtering for depositing thin films.


2019 ◽  
Vol 15 (2) ◽  
pp. 132-134
Author(s):  
Ding Sun ◽  
Yu-li Li ◽  
Yu-hong Zhang ◽  
Xiu-juan Guo ◽  
Li Zhang ◽  
...  

1991 ◽  
Vol 236 ◽  
Author(s):  
Rajiv K. Singh ◽  
James Carignan

AbstractWe have studied predicted thickness uniformity of thin films deposited by the pulsed laser ablation technique. Unlike a conventional evaporation process, the spatial thickness characteristics of laser-deposited films is controlled by a number of laser and other deposition variables including laser wavelength, pulse energy density, substrate-target distance, area and shape of the laser irradiated spot, etc. The effect of these parameters on the spatial thickness variations have been analyzed by using a model proposed by Singh et. al. [1]. This model is based on the anisotropic expansion of the laser-generated high-temperature and high-pressure plasma, which is initially confined to small dimensions and then expands anisotropically in vacuum. The results show that spatial film uniformity can be improved by decreasing plasma temperature and specific heat capacity ratio of the plasma gas. For large laser irradiated spot diameters (> 8 mm), the film uniformity was found to decrease with decreasing spot diameters, but this trend reversed at smaller: irradiated spot sizes. Depending on the laser irradiated conditions and substrate-target geometry, the thickness variations have been found to vary from (cos θ)2.5 to (cos θ)12. Optimization of various parameters to decrease the spatial-thickness inhomogeneities across the film are also discussed.


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