The Future of Sputtering in the Electron Microscope Laboratory

1973 ◽  
Vol 31 ◽  
pp. 82-83
Author(s):  
G. G. Paulson ◽  
R. E. Ferrell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Thermal Evaporation ◽  
Good Control ◽  
Dielectric Materials ◽  
Refractory Metals ◽  
Evaporation Process ◽  
The Future

In such fields as electronics and optics, the sputtering process is rapidly displacing the conventional evaporation process. Its major advantage is the ability to deposit a variety of refractory metals and dielectric materials with good control and reproducibility. This advantage and numerous others are valid reasons why sputtering may eventually displace thermal evaporation in the typical electron microscope laboratory. Sputtering is readily adapted to the procedures utilized in TEM, however, the following discussion highlights the advantages of sputtering for applying coatings to specimens for SEM.Sputtering is not a new concept. Numerous papers and books had been published before 1900 concerning the use of sputtering for depositing thin films.

Synthesis and Characterization of Nanostructured Materials Prepared from SiO2 and GeO2 Mixture by Carbon Assisted Method

2008 ◽  
Vol 55-57 ◽  
pp. 637-640 ◽  
Author(s):  
Pattanasuk Chamninok ◽  
P. Kasian ◽  
Pichet Limsuwan ◽  
Udom Tipparach ◽  
S. Samran ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Silicon Dioxide ◽  
Nanostructured Materials ◽  
Thermal Evaporation ◽  
Synthesis And Characterization ◽  
Image Analyzer ◽  
Evaporation Process ◽  
Stereo Microscope ◽  
Scanning Electron

Nanostructured materials were synthesized by thermal evaporation process using silicon dioxide and carbon from coconut shell charcoal or graphite mixed with GeO2 by the ratio of 5:1:1 at temperature 1200 oC in one atmosphere of nitrogen for 3 hours. The nanostructured materials were characterized by the stereo microscope (image analyzer) and scanning electron microscope. The diameters of nanowires vary from 10 nm to 50 nm and length of several 10 micrometers. Length of nanorods was around 15 micrometers and diameters vary from 10 nm to 100 nm.

Microstructure Development in Thin Films During Deposition from the Vapor Phase

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electron Microscope ◽  
Film Thickness ◽  
Single Phase ◽  
Thermal Evaporation ◽  
Film Deposition ◽  
Metallic Thin Films ◽  
Microstructure Development ◽  
Transmission Electron

ABSTRACTTransmission electron microscope observations of the structures of single-phase metallic thin films have been made. Films prepared by sputtering and by thermal evaporation have been used and the structures have been evaluated quantitatively as a function of film thickness. It is found that the grain size in all films increases linearly with the film thickness, indicating that grain growth occurs during film deposition.

Investigation of Nanomaterials Prepared by Thermal Evaporation of Carbon-ZnO Mixtures

2008 ◽  
Vol 55-57 ◽  
pp. 633-636
Author(s):  
D. Polsongkram ◽  
P. Kasian ◽  
Pichet Limsuwan ◽  
Udom Tipparach ◽  
S. Samran ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Nanostructured Materials ◽  
Thermal Evaporation ◽  
Image Analyzer ◽  
Evaporation Process ◽  
Stereo Microscope ◽  
20 Nm ◽  
Scanning Electron

ZnO and other nanomaterials were synthesized by thermal evaporation process by carbon assisted method using powder ZnO as a precursors at temperature 1200 oC in one atmosphere of nitrogen for 3 hours. The diameter of nanofibers and nanowires vary from 50 nm to 200 nm and length of several ten micrometers. The size of nanorods vary from 20 nm to 100 nm and length of a few micrometers. The stereo microscope with an image analyzer and scanning electron microscope instruments are used to characterize these nanostructured materials.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan
Keyword(s):  
Thin Films ◽  
Negative Temperature Coefficient ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Negative Temperature ◽  
Resistivity Measurements ◽  
Allowed Transition ◽  
Evaporation Technique ◽  
Indium Telluride ◽  
Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

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