Graphene nanoribbon tunnel field effect transistor with lightly doped drain: Numerical simulations

2014 ◽  
Vol 75 ◽  
pp. 245-256 ◽  
Author(s):  
Seyed Saleh Ghoreishi ◽  
Kamyar Saghafi ◽  
Reza Yousefi ◽  
Mohammad Kazem Moravvej-Farshi
Keyword(s):  
Numerical Simulations ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Lightly Doped Drain

Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation

2017 ◽  
Vol 64 (6) ◽  
pp. 2694-2701 ◽  
Author(s):  
Yawei Lv ◽  
Wenjing Qin ◽  
Qijun Huang ◽  
Sheng Chang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

A Theoretical Model of Band-to-Band Tunneling Current in an Armchair Graphene Nanoribbon Tunnel Field-Effect Transistor

2014 ◽  
Vol 896 ◽  
pp. 371-374 ◽  
Author(s):  
Christoforus S. Putrro Bimo ◽  
Fatimah A. Noor ◽  
Mikrajuddin Abdullah ◽  
Khairurrijal
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Electron Effective Mass ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene ◽  
Parabolic Dispersion

Tunneling current in an armchair graphene nanoribbon (AGNR) tunnel field-effect transistor (TFET) was modeled. A linear equation was employed in describing a potential distribution within the AGNR due to its simplicity. A parabolic dispersion and an electron effective mass obtained by approximating kx 0 to the parabolic dispersion were applied to AGNR. In order to obtain electron transmittance, electron wavefunctions in AGNR were based on Airy functions. The obtained transmittance was then applied to calculate the tunneling current by employing the Landauer formula. The calculated results showed that the tunneling current increases with the AGNR width. It was also shown that the tunneling current increases as temperature decreases. In addition, the gate voltage influences the saturation condition of tunneling current in AGNR TFETs.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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