Empirical model of data retention degradation in stacked-gate flash EEPROM cells with new interpoly dielectric of an Oxide–Nitride–Oxide–Nitride (ONON) layer
2005 ◽
Vol 49
(5)
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pp. 795-801
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2003 ◽
Vol 18
(2)
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pp. 158-162
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2005 ◽
Vol 44
(9A)
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pp. 6380-6384
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2004 ◽
Vol 43
(4B)
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pp. 2211-2216
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2012 ◽
Vol 51
(4S)
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pp. 04DD05
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2012 ◽
Vol 51
◽
pp. 04DD05
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