Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity

2010 ◽  
Vol 54 (11) ◽  
pp. 1257-1262 ◽  
Author(s):  
Lingquan Wang ◽  
Peter M. Asbeck ◽  
Yuan Taur
Keyword(s):  
Conduction Band ◽  
Poisson Solver ◽  
Self Consistent

scholarly journals A self-consistent hybrid model of kinetic striations in low-current Argon discharges

2022 ◽  
Author(s):  
Vladimir Kolobov ◽  
Juan Alonso Guzmán ◽  
R R Arslanbekov
Keyword(s):  
Kinetic Equation ◽  
Hybrid Model ◽  
Noble Gases ◽  
Numerical Solutions ◽  
Penning Ionization ◽  
Poisson Solver ◽  
Glow Discharges ◽  
Self Consistent ◽  
Ionization Model ◽  
Positive Column Plasma

Abstract A self-consistent hybrid model of standing and moving striations was developed for low-current DC discharges in noble gases. We introduced the concept of surface diffusion in phase space (r,u) (where u denotes the electron kinetic energy) described by a tensor diffusion in the nonlocal Fokker-Planck kinetic equation for electrons in the collisional plasma. Electrons diffuse along surfaces of constant total energy ε=u-eφ(r) between energy jumps in inelastic collisions with atoms. Numerical solutions of the 1d1u kinetic equation for electrons were obtained by two methods and coupled to ion transport and Poisson solver. We studied the dynamics of striation formation in Townsend and glow discharges in Argon gas at low discharge currents using a two-level excitation-ionization model and a “full-chemistry” model, which includes stepwise and Penning ionization. Standing striations appeared in Townsend and glow discharges at low currents, and moving striations were obtained for the discharge currents exceeding a critical value. These waves originate at the anode and propagate towards the cathode. We have seen two types of moving striations with the 2-level and full-chemistry models, which resemble the s and p striations previously observed in the experiments. Simulations indicate that processes in the anode region could control moving striations in the positive column plasma. The developed model helps clarify the nature of standing and moving striations in DC discharges of noble gases at low discharge currents and low gas pressures.

Self-Consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-Based High Electron Mobility Transistor

2010 ◽  
Vol 159 ◽  
pp. 342-347 ◽  
Author(s):  
T.R. Lenka ◽  
A.K. Panda
Keyword(s):  
Conduction Band ◽  
Electron Mobility ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Consistent ◽  
Band Profile ◽  
Alloy Disorder ◽  
Rf Performance

In this paper, there is an attempt to present the two dimensional electron gas (2DEG) transport characteristics of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor (HEMT) using a self-consistent numerical method for calculating the conduction-band profile and subband structure. The subband calculations take into account the piezoelectric and spontaneous polarization effects and the Hartree and exchange-correlation interaction. Here the dependency of conduction band profile, subband energies, 2DEG sheet concentration and sheet resistance on various Al mole fractions of AlxGa1-xN barrier layer are presented by incorporating simulation as well as available experimental data. Introduction of very thin binary AlN layer at the heterojunction of AlxGa1-xN/GaN resulting high mobility at high sheet charge densities by increasing the effective and decreasing alloy disorder scattering. Devices based on this structure exhibit good DC and RF performance as an increase of . Owing to high 2DEG density , the proposed device leads to operate in microwave and millimeter wave applications.

Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Electron Energy ◽  
Self Consistent ◽  
Plane Direction ◽  
The Magnetic Field

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.

DX Center Energy Level in InxAl1−xAs Compounds

1999 ◽  
Vol 573 ◽  
Author(s):  
Hüseyin Sari ◽  
Harry H. wieder
Keyword(s):  
Energy Level ◽  
Conduction Band ◽  
Canonical Ensemble ◽  
Grand Canonical Ensemble ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Indium Concentration ◽  
Self Consistent ◽  
Dx Center ◽  
Grand Canonical

ABSTRACTThe presence of DX centers in InxAl1−xAs, primarily in the indirect portion of the InxAl1−xAs bandgap, has been determined using modulation doped InxAl1−xAs/InyGa1−yAs heterostructures by means of persistent photoconductivity (PPC) and galvanomagnetic measurements. From the cooling bias experiment, the PPC, and self consistent Poisson and Schrddinger simulations the ratio of the ionized shallow donors to the DX centers is obtained. Using this ratio in the grand canonical ensemble (GCE) the energy level of DX centers is determined. It is found that the DX energy level merges with the conduction band at x ≅ 0.42 and is resonant with the conduction band in higher indium concentration.

scholarly journals Effect of Conduction Band Non-Parabolicity on the Nonlinear Optical Properties in GaAs/Ga1−xAlxAs Double Semi-V-shaped Quantum Wells

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 78 ◽  
Author(s):  
Zhi-Hai Zhang ◽  
Jian-Hui Yuan ◽  
Kang-Xian Guo ◽  
Elmustapha Feddi
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Energy Levels ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third ◽  
Compact Density ◽  
Self Consistent ◽  
Energy Dependent

In this paper, we investigate the effect of conduction band non-parabolicity (NPBE) on the third harmonic generation(THG), the linear and nonlinear intersub-band optical absorption coefficients (OACs) related with electronic states of double semi-V-shaped GaAs/Ga1−xAlxAs quantum wells(QWs) by using the compact-density-matrix approach. Simultaneously, the work is performed in the position dependent effective mass in order to compute the electronic structure for the system by the finite difference and self-consistent techniques. We also compare the results with and without considering NPBE. It is found that: (1) the NPBE has a significant influence on the sub-band energy levels of double semi-V-shaped QWs, and (2) the amplitude and position of the resonant peaks of the THG and nonlinear OACs in the case of considering NPBE show complicated behavior due to the energy dependent effective mass m*(E) where the energy value was chosen self-consistently.

3-D self-consistent Schrödinger-Poisson solver: the spectral element method

2008 ◽  
Vol 7 (3) ◽  
pp. 337-341 ◽  
Author(s):  
Candong Cheng ◽  
Joon-Ho Lee ◽  
Hisham Z. Massoud ◽  
Qing Huo Liu
Keyword(s):  
Spectral Element Method ◽  
Spectral Element ◽  
Poisson Solver ◽  
Self Consistent ◽  
Element Method

General-purpose open-source 1D self-consistent Schrödinger-Poisson Solver: Aestimo 1D

2021 ◽  
Vol 186 ◽  
pp. 110015 ◽  
Author(s):  
H. Hebal ◽  
Z. Koziol ◽  
S.B. Lisesivdin ◽  
R. Steed
Keyword(s):  
Open Source ◽  
General Purpose ◽  
Poisson Solver ◽  
Self Consistent

Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

2021 ◽  
Vol 119 (10) ◽  
pp. 103501
Author(s):  
K. Sumita ◽  
K. Toprasertpong ◽  
M. Takenaka ◽  
S. Takagi
Keyword(s):  
Conduction Band ◽  
Interface Traps ◽  
Self Consistent
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