Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity

2010 ◽  
Vol 54 (11) ◽  
pp. 1257-1262 ◽  
Author(s):  
Lingquan Wang ◽  
Peter M. Asbeck ◽  
Yuan Taur
Author(s):  
Vladimir Kolobov ◽  
Juan Alonso Guzmán ◽  
R R Arslanbekov

Abstract A self-consistent hybrid model of standing and moving striations was developed for low-current DC discharges in noble gases. We introduced the concept of surface diffusion in phase space (r,u) (where u denotes the electron kinetic energy) described by a tensor diffusion in the nonlocal Fokker-Planck kinetic equation for electrons in the collisional plasma. Electrons diffuse along surfaces of constant total energy ε=u-eφ(r) between energy jumps in inelastic collisions with atoms. Numerical solutions of the 1d1u kinetic equation for electrons were obtained by two methods and coupled to ion transport and Poisson solver. We studied the dynamics of striation formation in Townsend and glow discharges in Argon gas at low discharge currents using a two-level excitation-ionization model and a “full-chemistry” model, which includes stepwise and Penning ionization. Standing striations appeared in Townsend and glow discharges at low currents, and moving striations were obtained for the discharge currents exceeding a critical value. These waves originate at the anode and propagate towards the cathode. We have seen two types of moving striations with the 2-level and full-chemistry models, which resemble the s and p striations previously observed in the experiments. Simulations indicate that processes in the anode region could control moving striations in the positive column plasma. The developed model helps clarify the nature of standing and moving striations in DC discharges of noble gases at low discharge currents and low gas pressures.


2010 ◽  
Vol 159 ◽  
pp. 342-347 ◽  
Author(s):  
T.R. Lenka ◽  
A.K. Panda

In this paper, there is an attempt to present the two dimensional electron gas (2DEG) transport characteristics of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor (HEMT) using a self-consistent numerical method for calculating the conduction-band profile and subband structure. The subband calculations take into account the piezoelectric and spontaneous polarization effects and the Hartree and exchange-correlation interaction. Here the dependency of conduction band profile, subband energies, 2DEG sheet concentration and sheet resistance on various Al mole fractions of AlxGa1-xN barrier layer are presented by incorporating simulation as well as available experimental data. Introduction of very thin binary AlN layer at the heterojunction of AlxGa1-xN/GaN resulting high mobility at high sheet charge densities by increasing the effective and decreasing alloy disorder scattering. Devices based on this structure exhibit good DC and RF performance as an increase of . Owing to high 2DEG density , the proposed device leads to operate in microwave and millimeter wave applications.


1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.


1999 ◽  
Vol 573 ◽  
Author(s):  
Hüseyin Sari ◽  
Harry H. wieder

ABSTRACTThe presence of DX centers in InxAl1−xAs, primarily in the indirect portion of the InxAl1−xAs bandgap, has been determined using modulation doped InxAl1−xAs/InyGa1−yAs heterostructures by means of persistent photoconductivity (PPC) and galvanomagnetic measurements. From the cooling bias experiment, the PPC, and self consistent Poisson and Schrddinger simulations the ratio of the ionized shallow donors to the DX centers is obtained. Using this ratio in the grand canonical ensemble (GCE) the energy level of DX centers is determined. It is found that the DX energy level merges with the conduction band at x ≅ 0.42 and is resonant with the conduction band in higher indium concentration.


Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 78 ◽  
Author(s):  
Zhi-Hai Zhang ◽  
Jian-Hui Yuan ◽  
Kang-Xian Guo ◽  
Elmustapha Feddi

In this paper, we investigate the effect of conduction band non-parabolicity (NPBE) on the third harmonic generation(THG), the linear and nonlinear intersub-band optical absorption coefficients (OACs) related with electronic states of double semi-V-shaped GaAs/Ga1−xAlxAs quantum wells(QWs) by using the compact-density-matrix approach. Simultaneously, the work is performed in the position dependent effective mass in order to compute the electronic structure for the system by the finite difference and self-consistent techniques. We also compare the results with and without considering NPBE. It is found that: (1) the NPBE has a significant influence on the sub-band energy levels of double semi-V-shaped QWs, and (2) the amplitude and position of the resonant peaks of the THG and nonlinear OACs in the case of considering NPBE show complicated behavior due to the energy dependent effective mass m*(E) where the energy value was chosen self-consistently.


2008 ◽  
Vol 7 (3) ◽  
pp. 337-341 ◽  
Author(s):  
Candong Cheng ◽  
Joon-Ho Lee ◽  
Hisham Z. Massoud ◽  
Qing Huo Liu

2021 ◽  
Vol 186 ◽  
pp. 110015 ◽  
Author(s):  
H. Hebal ◽  
Z. Koziol ◽  
S.B. Lisesivdin ◽  
R. Steed

2021 ◽  
Vol 119 (10) ◽  
pp. 103501
Author(s):  
K. Sumita ◽  
K. Toprasertpong ◽  
M. Takenaka ◽  
S. Takagi

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