Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

2021 ◽  
Vol 119 (10) ◽  
pp. 103501
Author(s):  
K. Sumita ◽  
K. Toprasertpong ◽  
M. Takenaka ◽  
S. Takagi
Keyword(s):  
Conduction Band ◽  
Interface Traps ◽  
Self Consistent

Passivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium Ions

2012 ◽  
Vol 717-720 ◽  
pp. 761-764 ◽  
Author(s):  
Pétur Gordon Hermannsson ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Thermal Stability ◽  
Conduction Band ◽  
Energy Levels ◽  
Sample Surface ◽  
Conduction Band Edge ◽  
Potassium Ions ◽  
Interface Traps ◽  
Bias Stress ◽  
Dry Oxidation ◽  
Thermal Stability Of

We investigate the passivation of interface traps by method of oxidizing Si-face 4H-SiC in the presence of potassium as well as examining the thermal stability of this passivation process. It is observed that this type of dry oxidation leads to a strong passivation of interface traps at the SiO2/4H-SiC interface with energy levels near the SiC conduction band edge. Furthermore, it is observed that if potassium ions residing at the SiO2/SiC interface are moved towards the sample surface by exposing them to ultraviolet light (UV) under an applied depletion bias stress at high temperatures the interface traps become electrically active again and are evidently depassivated. These findings are in line with recently a published model of the effect of sodium on such interface states

Self-Consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-Based High Electron Mobility Transistor

2010 ◽  
Vol 159 ◽  
pp. 342-347 ◽  
Author(s):  
T.R. Lenka ◽  
A.K. Panda
Keyword(s):  
Conduction Band ◽  
Electron Mobility ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Consistent ◽  
Band Profile ◽  
Alloy Disorder ◽  
Rf Performance

In this paper, there is an attempt to present the two dimensional electron gas (2DEG) transport characteristics of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor (HEMT) using a self-consistent numerical method for calculating the conduction-band profile and subband structure. The subband calculations take into account the piezoelectric and spontaneous polarization effects and the Hartree and exchange-correlation interaction. Here the dependency of conduction band profile, subband energies, 2DEG sheet concentration and sheet resistance on various Al mole fractions of AlxGa1-xN barrier layer are presented by incorporating simulation as well as available experimental data. Introduction of very thin binary AlN layer at the heterojunction of AlxGa1-xN/GaN resulting high mobility at high sheet charge densities by increasing the effective and decreasing alloy disorder scattering. Devices based on this structure exhibit good DC and RF performance as an increase of . Owing to high 2DEG density , the proposed device leads to operate in microwave and millimeter wave applications.

Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Electron Energy ◽  
Self Consistent ◽  
Plane Direction ◽  
The Magnetic Field

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.

Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements

2015 ◽  
Vol 821-823 ◽  
pp. 476-479
Author(s):  
Stefan Noll ◽  
Martin Rambach ◽  
Michael Grieb ◽  
Dick Scholten ◽  
Anton J. Bauer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Nitrogen Doping ◽  
Interface Traps ◽  
Channel Mobility ◽  
High Frequencies ◽  
Inversion Channel ◽  
Very High Frequencies ◽  
Post Implantation ◽  
Very High

Current power MOSFET devices on Silicon Carbide show a limited inversion channel mobility, which can be a result of the expected very high density of interface states near the conduction band . In the current work, the effect of the post implantation annealing temperature, the thermal oxidation and the nitrogen doping of the n-epi layer on the density of these interface traps is investigated using capacity-conductance measurements. Instead of the usage of very high frequencies as used in , in this investigation the measurements were performed in liquid nitrogen to decrease the recharging times of the interface traps.Due to the different processing the samples showed a wide spreading of the inversion channel mobility. The conductance measurements show a characteristic peak caused by the conduction band near interface traps especially for the low temperature measurements. But these traps could not be correlated to the mobility. Instead, a correlation to the nitrogen doping of the epi layer could be observed.

Traps at the SiC/SiO2-Interface

2000 ◽  
Vol 640 ◽  
Author(s):  
Gerhard Pensl ◽  
Michael Bassler ◽  
Florin Ciobanu ◽  
Valeri Afanas'ev ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Conduction Band ◽  
Interface States ◽  
Strong Increase ◽  
Interface Traps ◽  
Temperature Range ◽  
Density Of Interface States

ABSTRACTThe density of interface states Dit at SiC/SiO2 interfaces of different SiC polytypes (4H-, 6H- and 15R-SiC) is monitored and the origin of these states is discussed. The hydrogenation behavior of interface states in the temperature range from 250°C to 1000°C is studied by C-V and G-V investigations. The strong increase of Dit close to the 4H-SiC conduction band is attributed to defects located in the oxide (so-called “Near Interface Traps”).

Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 175-179
Author(s):  
Judith Berens ◽  
Gregor Pobegen ◽  
Thomas Aichinger ◽  
Gerald Rescher ◽  
Tibor Grasser
Keyword(s):  
Nitric Oxide ◽  
Conduction Band ◽  
Thermal Emission ◽  
Current Method ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Traps ◽  
Two Peaks ◽  
Trap Levels

We employed the thermal dielectric relaxation current method (TDRC) for the cryogenic characterization of ammonia (NH3) post oxidation annealed 4H silicon carbide (4H-SiC) trench MOSFETs. We studied differences and similarities between annealing in nitric oxide (NO) and NH3. In NO and NH3 annealed trench MOSFETs, the same type of traps was found near the conduction band edge of 4H-SiC. The TDRC-signal consists of two peaks caused by interface states with a thermal emission barrier of 0.13 eV and near interface traps (NITs) with an emission barrier of approximately 0.3 eV. Significantly more interface traps close to the conduction band edge were found for the NH3 annealed devices compared to the NO annealed ones. Our TDRC results indicate that NH3 post oxidation anneal (POA) affects trap levels in a different way than NO POA.

DX Center Energy Level in InxAl1−xAs Compounds

1999 ◽  
Vol 573 ◽  
Author(s):  
Hüseyin Sari ◽  
Harry H. wieder
Keyword(s):  
Energy Level ◽  
Conduction Band ◽  
Canonical Ensemble ◽  
Grand Canonical Ensemble ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Indium Concentration ◽  
Self Consistent ◽  
Dx Center ◽  
Grand Canonical

ABSTRACTThe presence of DX centers in InxAl1−xAs, primarily in the indirect portion of the InxAl1−xAs bandgap, has been determined using modulation doped InxAl1−xAs/InyGa1−yAs heterostructures by means of persistent photoconductivity (PPC) and galvanomagnetic measurements. From the cooling bias experiment, the PPC, and self consistent Poisson and Schrddinger simulations the ratio of the ionized shallow donors to the DX centers is obtained. Using this ratio in the grand canonical ensemble (GCE) the energy level of DX centers is determined. It is found that the DX energy level merges with the conduction band at x ≅ 0.42 and is resonant with the conduction band in higher indium concentration.

scholarly journals Effect of Conduction Band Non-Parabolicity on the Nonlinear Optical Properties in GaAs/Ga1−xAlxAs Double Semi-V-shaped Quantum Wells

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 78 ◽  
Author(s):  
Zhi-Hai Zhang ◽  
Jian-Hui Yuan ◽  
Kang-Xian Guo ◽  
Elmustapha Feddi
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Energy Levels ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third ◽  
Compact Density ◽  
Self Consistent ◽  
Energy Dependent

In this paper, we investigate the effect of conduction band non-parabolicity (NPBE) on the third harmonic generation(THG), the linear and nonlinear intersub-band optical absorption coefficients (OACs) related with electronic states of double semi-V-shaped GaAs/Ga1−xAlxAs quantum wells(QWs) by using the compact-density-matrix approach. Simultaneously, the work is performed in the position dependent effective mass in order to compute the electronic structure for the system by the finite difference and self-consistent techniques. We also compare the results with and without considering NPBE. It is found that: (1) the NPBE has a significant influence on the sub-band energy levels of double semi-V-shaped QWs, and (2) the amplitude and position of the resonant peaks of the THG and nonlinear OACs in the case of considering NPBE show complicated behavior due to the energy dependent effective mass m*(E) where the energy value was chosen self-consistently.

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