Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate

Solid-State Electronics ◽

10.1016/j.sse.2012.07.023 ◽

2013 ◽

Vol 86 ◽

pp. 75-78

Author(s):

K.S. Min ◽

C. Park ◽

C.Y. Kang ◽

C.S. Park ◽

B.J. Park ◽

...

Keyword(s):

Neutral Beam ◽

High K ◽

High K Dielectric ◽

Neutral Beam Etching

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A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for sub-32nm technology node low power metal gate/high-k dielectric CMOSFETs

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424330 ◽

2009 ◽

Author(s):

K.S. Min ◽

C. Y. Kang ◽

C. Park ◽

C. S. Park ◽

B. J. Park ◽

...

Keyword(s):

Low Power ◽

Atomic Layer ◽

Neutral Beam ◽

Technology Node ◽

High K ◽

High K Dielectric ◽

Atomic Layer Etching

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Assessing the Performance of CMOS Amplifiers Using High-k Dielectric with Metal Gate on High Mobility Substrate

Communications in Computer and Information Science - Advances in Computing and Data Sciences ◽

10.1007/978-981-13-1810-8_28 ◽

2018 ◽

pp. 279-289

Author(s):

Deepa Anand ◽

M. Swathi ◽

A. Purushothaman ◽

Sundararaman Gopalan

Keyword(s):

High Mobility ◽

High K ◽

High K Dielectric

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Electron Energy-Loss Spectrum Imaging of an HfSiO High-k Dielectric Stack with a TaN Metal Gate

Springer Proceedings in Physics - Microscopy of Semiconducting Materials 2007 ◽

10.1007/978-1-4020-8615-1_68 ◽

2008 ◽

pp. 313-316

Author(s):

M MacKenzie ◽

A J Craven ◽

D W McComb ◽

C M McGilvery ◽

S McFadzean ◽

...

Keyword(s):

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectrum ◽

High K ◽

Spectrum Imaging ◽

High K Dielectric ◽

Electron Energy Loss

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Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. ◽

10.1109/essderc.2003.1256941 ◽

2004 ◽

Author(s):

J. Pretet ◽

A. Vandooren ◽

S. Ciistoloveanu

Keyword(s):

High K ◽

High K Dielectric

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Dopant Segregated Schottky Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

ECS Meeting Abstracts ◽

10.1149/ma2009-02/31/2395 ◽

2009 ◽

Keyword(s):

High K ◽

High K Dielectric

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Impact of TiN/HfO2 Integration on Carrier Mobility

MRS Proceedings ◽

10.1557/proc-0917-e04-04 ◽

2006 ◽

Vol 917 ◽

Author(s):

Mikael Casse ◽

Laurent Thevenod ◽

Bernard Guillaumot ◽

Lucie Tosti ◽

Vincent Cosnier ◽

...

Keyword(s):

Experimental Data ◽

Carrier Mobility ◽

Interface Layer ◽

Interface Roughness ◽

Coulomb Scattering ◽

Coulombic Interactions ◽

High K ◽

High K Dielectric ◽

AbstractWe have investigated the impact of a metal gate (TiN) and high-k dielectric (HfO2) on the carrier mobility. We have shown that strong remote Coulomb scattering (RCS) due to charges in the HfO2 layer (either grown by ALD or MOCVD) mostly degrades the mobility at low/medium field. High amount of charges (>1013cm-2) is needed to explain the 30% degradation observed in devices with a thin interface layer. These additional coulombic interactions are effective for bottom oxide up to 2nm. We have developed a RCS model to fully explain the experimental data. The influence of the metal gate is also evidenced. The latter has a significative impact on the Si/SiO2 interface roughness, and may induce some additional coulombic interactions.

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Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3578466 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032203 ◽

Author(s):

Shu-Tong Chang ◽

Chang-Chun Lee ◽

P.-H. Sun

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Effect Transistor ◽

High K Dielectric ◽

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Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

Microelectronic Engineering ◽

10.1016/j.mee.2010.04.002 ◽

2011 ◽

Vol 88 (12) ◽

pp. 3399-3403 ◽

Author(s):

Hyuk-Min Kwon ◽

Won-Ho Choi ◽

In-Shik Han ◽

Min-Ki Na ◽

Sang-Uk Park ◽

...

Keyword(s):

Transport Mechanism ◽

Carrier Transport ◽

Carrier Transport Mechanism ◽

High K ◽

High K Dielectric

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

Solid-State Electronics ◽

10.1016/j.sse.2012.11.008 ◽

2013 ◽

Vol 82 ◽

pp. 82-85 ◽

Author(s):

K.S. Min ◽

C. Park ◽

C.Y. Kang ◽

C.S. Park ◽

B.J. Park ◽

...

Keyword(s):

Gate Dielectric ◽

Atomic Layer ◽

High K ◽

High K Dielectric ◽

Atomic Layer Etching ◽

High K Gate Dielectric

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