scholarly journals The effects of temperature and substrate curvature on TBC lifetime and residual stress in alumina scales beneath APS YSZ

2016 ◽  
Vol 308 ◽  
pp. 19-23 ◽  
Author(s):  
M.J. Lance ◽  
J.A. Haynes ◽  
B.A. Pint
Keyword(s):  
Residual Stress ◽  
Alumina Scales ◽  
Effects Of Temperature ◽  
Substrate Curvature ◽  
Tbc Lifetime

scholarly journals Evolution of Principle and Practice of Electrodeposited Thin Film: A Review on Effect of Temperature and Sonication

2011 ◽  
Vol 2011 ◽  
pp. 1-16 ◽  
Author(s):  
A. Mallik ◽  
B. C. Ray
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Electrochemical Deposition ◽  
Surface Engineering ◽  
Effect Of Temperature ◽  
Structure And Morphology ◽  
Nucleation Mechanisms ◽  
Effects Of Temperature

This review discusses briefly the important aspects of thin films. The introduction of the article is a summary of evolution of thin films from surface engineering, their deposition methods, and important issues. The fundamental aspects of electrochemical deposition with special emphasis on the effect of temperature on the phase formation have been reviewed briefly. The field of sonoelectrochemistry has been discussed in the paper. The literature regarding the effects of temperature and sonication on the structure and morphology of the deposits and nucleation mechanisms, residual stress, and mechanical properties has also been covered briefly.

scholarly journals Effect of Temperature and Pressure of Supercritical CO2 on Dewatering, Shrinkage and Stresses of Eucalyptus Wood

2021 ◽  
Vol 11 (18) ◽  
pp. 8730
Author(s):  
Lin Yang
Keyword(s):  
Residual Stress ◽  
Supercritical Co2 ◽  
Tangential Direction ◽  
Effect Of Temperature ◽  
Eucalyptus Wood ◽  
Conventional Kiln Drying ◽  
Effects Of Temperature ◽  
Temperature And Pressure ◽  
Capillary Tension ◽  
Increasing Temperature

Supercritical CO2 (SuCO2) dewatering can mitigate capillary tension and reduce wood collapse. In this study, Eucalyptus urophylla × E. grandis specimens were dewatered by SuCO2 at temperatures of 35, 40 and 55 °C, in pressures of 10 and 30 MPa, respectively, for 1h. Effects of temperature and pressure on dewatering rate, moisture content (MC) distribution and gradient, shrinkage and residual stress of wood after dewatering were investigated. The results indicate that the SuCO2 dewatering rate is much faster than that of conventional kiln drying (CKD). The dewatering rate increases with increasing of temperature and pressure; however, pressure has a significant influence, especially for the high-temperature dewatering process; the MC distribution after 1 h dewatering is uneven and MC gradients decrease with reducing of mean final MC of wood. MC gradients along radial direction are much smaller than that in tangential direction; collapse of wood significantly reduces after dewatering due to SuCO2 decreasing the capillary tension, and residual stress of wood during dewatering is mainly caused by pressure of SuCO2, which decreases with increasing temperature. SuCO2 dewatering has great potential advantages in water-removal of wood prone to collapse or deformation.

Residual stresses in polycrystalline Cu/Cr multilayered thin films

2000 ◽  
Vol 15 (3) ◽  
pp. 756-763 ◽  
Author(s):  
A. Misra ◽  
H. Kung ◽  
T. E. Mitchell ◽  
M. Nastasi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Yield Strength ◽  
Residual Stresses ◽  
Layer Thickness ◽  
Growth Stresses ◽  
Cu Films ◽  
Bilayer Films ◽  
Order Of Magnitude ◽  
Substrate Curvature

Residual stresses in sputter-deposited Cu/Cr multilayers and Cu and Cr single-layered polycrystalline thin films were evaluated by the substrate curvature method. The stresses in the multilayers were found to be tensile and to increase in magnitude with increasing layer thickness (h) to a peak value of ∼1 GPa for h = 50 nm. For h > 50 nm, the residual stress decreased with increasing h but remained tensile. The same trends were observed in single-layered Cu and Cr thin films, except that the maximum stress in Cu films is 1 order of magnitude lower than that in Cr. Transmission electron microscopy was used to study the microstructural evolution as a function of layer thickness. The evolution of tensile growth stresses in Cr films is explained by island coalescence and subsequent growth with increasing thickness. Estimates of the Cr film yield strength indicated that, for h ≥ 50 nm, the residual stress may be limited by the yield strength. Substrate curvature measurements on bilayer films of different thicknesses were used to demonstrate that a non-negligible contribution to the total stress in the multilayers arises from the interface stress.

Deposition of Crack-Free BaTiO3 and Pb(Zr,Ti)O3 Films Over 1 μm Thick Via Single-Step Dip-Coating

1999 ◽  
Vol 606 ◽  
Author(s):  
H. Kozuka ◽  
M. Kajimura ◽  
K. Katayama ◽  
Y. Isota ◽  
T. Hirano
Keyword(s):  
Residual Stress ◽  
Tensile Stress ◽  
Spin Coating ◽  
Crack Formation ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Single Step ◽  
Stepwise Heating ◽  
Pzt Films ◽  
Substrate Curvature

AbstractBaTiO3 and PZT films were prepared by single-step dip-coating from alkoxide-acetate solutions containing polyvinylpyrrolidone (PVP). Crack-free BaTiO3 and PZT films over 1 μm in thickness were obtained via single-step deposition. Stepwise heating of the gel films was found to improve densification of BaTiO3 films, reducing the thickness and increasing the optical transmittance, which was not, however, the case with PZT films, where the stepwise heating rather induced crack formation, leading to degraded transmittance. Residual stress was evaluated on spin-coating BaTiO3 films by measuring the substrate curvature, where a significant reduction in tensile stress was found to be caused by PVP.

scholarly journals Residual stress measurement of porous silicon thin film by substrate curvature method

2006 ◽  
Vol 55 (10) ◽  
pp. 5451
Author(s):  
Di Yu-Xian ◽  
Ji Xin-Hua ◽  
Hu Ming ◽  
Qin Yu-Wen ◽  
Chen Jin-Long
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Porous Silicon ◽  
Stress Measurement ◽  
Residual Stress Measurement ◽  
Silicon Thin Film ◽  
Substrate Curvature

Residual Stress Measurement of Porous Silicon Thin Film by Substrate Curvature Method

2006 ◽  
Vol 326-328 ◽  
pp. 223-226
Author(s):  
Yu Xian Di ◽  
Xin Hua Ji ◽  
Ming Hu ◽  
Yu Wen Qin ◽  
Jin Long Chen
Keyword(s):  
Residual Stress ◽  
Porous Silicon ◽  
Stress Measurement ◽  
Electrochemical Etching ◽  
Intrinsic Stress ◽  
Residual Tensile Stress ◽  
Porous Films ◽  
Silicon Thin Film ◽  
Before And After ◽  
Substrate Curvature

Extensive research has been done on porous silicon (PS) and its applications in optoelectronics since the discovery of its light emitting properties. Porous silicon technology is also used for silicon micro machining. However, porous films can be seriously strained and this often causes mechanical curling, fracture and device failures. In the present study an optical apparatus based on substrate curvature method was developed for intrinsic stress measurement of thin films, which offered a lot of advantages as overall field, non-contact, high precision, nondestructive, easy operation and quick response. Using the apparatus, the residual stress in porous silicon layers prepared by electrochemical etching was obtained. The residual stresses in the films were determined by measuring the curvature of the Si substrate before and after etching. It is found that the residual tensile stress tends to increase with the porosity increasing and the doping concentration of the silicon wafer increasing. The results show that there is a deep connection between the microstructure PS and the residual stress distribution.

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