Preparation on ZnO film by Atomic Layer Deposition

1999 ◽  
Vol 169-170 ◽  
pp. 159-162 ◽  
Author(s):  
K. Kobayashi ◽  
S. Okudaira ◽  
Yuuki Ishida
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Film ◽  
Layer Deposition

Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

2006 ◽  
Vol 510-511 ◽  
pp. 670-673 ◽  
Author(s):  
Chong Mu Lee ◽  
Yeon Kyu Park ◽  
Anna Park ◽  
Choong Mo Kim
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Nitrogen Atmosphere ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Zno Film ◽  
Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

Surface Modification of Carbon Post Arrays by Atomic Layer Deposition of ZnO Film

2011 ◽  
Vol 11 (8) ◽  
pp. 7322-7326 ◽  
Author(s):  
Hyun Ae Lee ◽  
Young-Chul Byun ◽  
Umesh Singh ◽  
Hyoung J. Cho ◽  
Hyoungsub Kim
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Film ◽  
Layer Deposition

scholarly journals Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

2017 ◽  
Vol 326 ◽  
pp. 281-290 ◽  
Author(s):  
Mari Napari ◽  
Manu Lahtinen ◽  
Alexey Veselov ◽  
Jaakko Julin ◽  
Erik Østreng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Zno Film ◽  
Temperature Plasma ◽  
Reactor Configuration ◽  
Layer Deposition

Antibacterial activity of the thin ZnO film formed by atomic layer deposition under UV-A light

2017 ◽  
Vol 328 ◽  
pp. 988-996 ◽  
Author(s):  
Kang-Hee Park ◽  
Gwon Deok Han ◽  
Ke Chean Neoh ◽  
Taek-Seung Kim ◽  
Joon Hyung Shim ◽  
...  
Keyword(s):  
Antibacterial Activity ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Film ◽  
Layer Deposition

Effect of Al2O3 Capping Layer in ZnO TFT Fabricated by Atomic Layer Deposition

2013 ◽  
Vol 658 ◽  
pp. 108-111
Author(s):  
Kwang Seok Jeong ◽  
Yu Mi Kim ◽  
Ho Jin Yun ◽  
Seung Dong Yang ◽  
Sang Youl Lee ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Layer Thickness ◽  
Atomic Layer ◽  
Zno Films ◽  
Zno Film ◽  
Capping Layer ◽  
Layer Deposition ◽  
Metallic Conduction ◽  
Conduction Behavior

In this paper, the electrical and physical analysis is carried out to investigate the effect of Al2O3 capping layer on ZnO film using atomic layer deposition. ZnO TFTs shows the metallic conduction behavior as Al2O3 capping layer thickness increases. From SIMS analysis, it is found out that the diffusion of Al into ZnO film is enhanced according to Al2O3 capping layer thickness. Moreover, the defects related to oxygen such as oxygen vacancy increase from XPS analysis and ZnO films reveal less compressive stress by substitution of Zn with Al form XRD analysis. That is, the metallic conduction behavior of ZnO TFTs with Al2O3 capping layer can be explained due to increase in the carrier concentration in ZnO channel layer from oxygen vacancy and substitution of Zn with Al.

Atomic layer deposition ZnO film as seed layer for hydrothermal growth of ZnO nanorods

2010 ◽  
Vol 1258 ◽  
Author(s):  
Xianglin Li ◽  
Chuanwei Cheng ◽  
Hongjin Fan
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Zno Nanorods ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Dip Coating ◽  
Hybrid Nanostructures ◽  
Zno Film ◽  
Layer Deposition ◽  
Coating Method

AbstractAtomic layer deposition (ALD) ZnO film as seed layer for growing aligned ZnO nanorods arrays is demonstrated. The effects of the deposition temperature and film thickness to the morphology of the ZnO nanorods are studied. The ALD is found to have its advantage over the conventional dip-coating method when being applied to three-dimensional (3D) substrates, as exemplified by the macroporous Si adn CNT arrays. As one example, the CNT-ZnO 3D hybrid nanostructures are obtained which might be useful for energy-related applications.

Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors

2018 ◽  
Vol 65 (8) ◽  
pp. 3283-3290 ◽  
Author(s):  
Xingwei Ding ◽  
Jun Yang ◽  
Cunping Qin ◽  
Xuyong Yang ◽  
Tao Ding ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Zno Film ◽  
Nitrogen Doped ◽  
Layer Deposition ◽  
Doped Zno
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