scholarly journals Effect of Al plating on growth behavior of TGO layer in CoCrNiAlY–YSZ–RSZ dual-ceramic coating

2022 ◽  
pp. 128060
Author(s):  
Zhiguo Wang ◽  
Tianxin Liu ◽  
Enlei Wang ◽  
Suying Hu ◽  
Zhiwen Xie ◽  
...  
Keyword(s):  
Ceramic Coating ◽  
Growth Behavior

Characterization of thermal barrier coatings formed by electon-beam physical vapor deposition (EB-PVD)

1989 ◽  
Vol 47 ◽  
pp. 426-427
Author(s):  
Ozer Unal
Keyword(s):  
Thermal Barrier Coatings ◽  
Physical Vapor Deposition ◽  
Ceramic Coating ◽  
High Vacuum ◽  
Ceramic Coatings ◽  
High Energy ◽  
Thermal Barrier ◽  
Protective Oxide ◽  
Barrier Coatings ◽  
Energy Beam

Interest in ceramics as thermal barrier coatings for hot components of turbine engines has increased rapidly over the last decade. The primary reason for this is the significant reduction in heat load and increased chemical inertness against corrosive species with the ceramic coating materials. Among other candidates, partially-stabilized zirconia is the focus of attention mainly because ot its low thermal conductivity and high thermal expansion coefficient.The coatings were made by Garrett Turbine Engine Company. Ni-base super-alloy was used as the substrate and later a bond-coating with high Al activity was formed over it. The ceramic coatings, with a thickness of about 50 μm, were formed by EB-PVD in a high-vacuum chamber by heating the target material (ZrO2-20 w/0 Y2O3) above its evaporation temperaturef >3500 °C) with a high-energy beam and condensing the resulting vapor onto a rotating heated substrate. A heat treatment in an oxidizing environment was performed later on to form a protective oxide layer to improve the adhesion between the ceramic coating and substrate. Bulk samples were studied by utilizing a Scintag diffractometer and a JEOL JXA-840 SEM; examinations of cross-sectional thin-films of the interface region were performed in a Philips CM 30 TEM operating at 300 kV and for chemical analysis a KEVEX X-ray spectrometer (EDS) was used.

Damage of aluminum samples with alumina ceramic coating under pulsed energy flows of various nature

2018 ◽  
pp. 15-27 ◽  
Author(s):  
V. A. Gribkov ◽  
◽  
A. S. Demin ◽  
N. A. Epifanov ◽  
E. E. Kazilin ◽  
...  
Keyword(s):  
Ceramic Coating ◽  
Alumina Ceramic ◽  
Energy Flows

INDALLOY 160-190

Alloy Digest ◽  
1984 ◽  
Vol 33 (1) ◽  
Keyword(s):  
Physical Properties ◽  
Tensile Properties ◽  
Precision Measurement ◽  
Heat Treating ◽  
Spray Forming ◽  
Growth Behavior ◽  
Temperature Range

Abstract INDALLOY 160-190 is a bismth-base low-melting alloy that melts through th temperature range 160-190 F. It shrinks immediately upon solidification, grows back to zero in about one hour and then shows additional growth. This shrinkage-growth behavior makes it an ideal alloy for proof casting and precision measurement of internal dimensions. This alloy originally was developed for use by children for casting soldiers and other small objects. It performs best among the low-melting alloys for spraying in the spray forming of masks and molds and in metallizing. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on casting, heat treating, machining, and joining. Filing Code: Bi-34. Producer or source: Indium Corporation of America.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Sign in / Sign up

Export Citation Format

Share Document