Layer by layer growth of electroactive conducting polymer/magnetite hybrid assemblies

2013 ◽  
Vol 171 ◽  
pp. 62-68 ◽  
Author(s):  
B. Endrődi ◽  
A. Bíró ◽  
C. Janáky ◽  
I.Y. Tóth ◽  
C. Visy
Keyword(s):  
Conducting Polymer ◽  
Layer Growth ◽  
Layer By Layer ◽  
Hybrid Assemblies

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

Direct Layer-by-Layer Growth of Crystalline Ag-TCNQ Thin Films on Functionalized Au Substrate: How Critical Is the pH of Ag(I) Solution?

2020 ◽  
Vol 11 (24) ◽  
pp. 10548-10551
Author(s):  
Aswani Sathish Lathika ◽  
Shammi Rana ◽  
Anupam Prasoon ◽  
Pooja Sindhu ◽  
Debashree Roy ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Growth ◽  
Layer By Layer

High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H-SiC(0001) Substrate

2003 ◽  
Vol 42 (Part 2, No. 5A) ◽  
pp. L445-L447 ◽  
Author(s):  
Norio Onojima ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
High Quality ◽  
Initial Layer

Dynamic observation of layer-by-layer growth and removal of graphene on Ru(0001)

2010 ◽  
Vol 12 (19) ◽  
pp. 5053 ◽  
Author(s):  
Yi Cui ◽  
Qiang Fu ◽  
Xinhe Bao
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
Dynamic Observation

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

Quasi-Layer-by-Layer Growth of Pentacene on HOPG and Au Surfaces

2017 ◽  
Vol 121 (45) ◽  
pp. 25043-25051 ◽  
Author(s):  
Hongyan Yang ◽  
Lizhen Huang ◽  
Kewei Sun ◽  
Kaifeng Niu ◽  
Zequn Cui ◽  
...  
Keyword(s):  
Layer Growth ◽  
Layer By Layer

Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges

1995 ◽  
Vol 387 ◽  
Author(s):  
J. L. Hoyt ◽  
P. Kuo ◽  
K. Rim ◽  
J. J. Welser ◽  
R. M. Emerson ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Layer Growth ◽  
Point Of View ◽  
Atomic Layer Epitaxy ◽  
Future Research ◽  
Layer By Layer ◽  
Limited Growth ◽  
Measurement And Control

AbstractMaterial and device challenges for Rapid Thermal Processing (RTP) of heterostructures are discussed, focusing on RTP-based epitaxy in the Si/Si1−xGex system. While RTP-based heteroepitaxy offers enhanced processing flexibility, it also poses significant challenges for temperature measurement and control. Several examples of Si/Si1−xGex device structures are discussed from the point of view of the sensitivity of device parameters to variations in layer thickness and composition. The measured growth kinetics for Si and Si1−xGex are then used to estimate growth temperature tolerances for these structures. Demanding applications are expected to require temperature control and uniformity to within 0.5°C.Future research challenges include the fabrication of structures with monolayer thickness control using self-limited growth techniques. Atomic layer epitaxy (ALE) is a well-known example of such a growth technique. In ALE, the wafer is cyclically exposed to different reactants, to achieve layer-by-layer growth. An RTP-based atomic layer epitaxy process, and its application to the growth of CdTe films, is briefly discussed. The extension to Column IV alloys follows readily. The RTP-based process enables self-limited growth for precursor combinations for which isothermal ALE is not feasible.

Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs (001)

2007 ◽  
Vol 515 (14) ◽  
pp. 5611-5614 ◽  
Author(s):  
B. Jenichen ◽  
V.M. Kaganer ◽  
W. Braun ◽  
J. Herfort ◽  
R. Shayduk ◽  
...  
Keyword(s):  
Layer Growth ◽  
Layer By Layer
Sign in / Sign up

Export Citation Format

Share Document