High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H-SiC(0001) Substrate

2003 ◽  
Vol 42 (Part 2, No. 5A) ◽  
pp. L445-L447 ◽  
Author(s):  
Norio Onojima ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
High Quality ◽  
Initial Layer

Surfactant-Mediated Growth of Ge/Si(001) Interface Studied by XPD

1998 ◽  
Vol 05 (01) ◽  
pp. 157-161 ◽  
Author(s):  
R. Gunnella ◽  
P. Castrucci ◽  
N. Pinto ◽  
P. Cucculelli ◽  
I. Davoli ◽  
...  
Keyword(s):  
High Temperature ◽  
Auger Electron ◽  
Layer Growth ◽  
Layer By Layer ◽  
Growth Morphology ◽  
High Quality ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Quality Degradation ◽  
Cap Layer

The influence of Sb as a surfactant on the formation of Si/Ge interface is studied by means of XPD (X-ray photoelectron diffraction) and AED (Auger electron diffraction) from Ge and Si core levels. The technique employed is particularly suitable for checking the film tetragonal distortion, the growth morphology and the sharpness of the interface. We found a layer by layer growth mode for 3 ML of Ge on Si(001) and related values of strain of the film close to the value predicted by the elastic theory which enforces the use of such a surfactant to obtain high quality and sharp heterostructures. In addition, studying the influence of 3 ML of the Si cap layer on the 3 ML Ge, we obtain no indication of Ge segregation into the Si cap layer. Finally, evidences of quality degradation after high temperature (T > 600° C ) annealing are shown.

Enhancement of Electrical Conductance for Pentacene Thin Film Transistor by Controlling an Initial Layer-by-Layer Growth Mode Directly on SiO2Insulator

2009 ◽  
Vol 48 (4) ◽  
pp. 04C164 ◽  
Author(s):  
Qiong Qi ◽  
Yeping Jiang ◽  
Aifang Yu ◽  
Xiaohui Qiu ◽  
Chao Jiang
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Conductance ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Initial Layer

Auto Feeding Epitaxial Growth of Oxide Thin Film without Oxidant

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazuo Shimoyama ◽  
Kousuke Kubo ◽  
Tatsuro Maeda ◽  
Kikuo Yamabe
Keyword(s):  
Molecular Beam ◽  
Oxygen Supply ◽  
High Energy ◽  
Layer Growth ◽  
Oxide Thin Film ◽  
Layer By Layer ◽  
High Energy Electron ◽  
Low Oxygen ◽  
High Quality ◽  
Deposited Films

ABSTRACTHigh-quality thin films of BaTiO3 and SrTiO3 on SrTiO3 substrate were obtained by shutting off the oxygen supply during growth. Epitaxial growths were carried out with molecular-beam epitaxy (MBE) under extremely low oxygen partial pressure (pO2 < 1×10−8 Pa). Although only Ba(Sr) and Ti metals were supplied without introducing oxidant during the growth, clear reflection high-energy electron diffraction (RHEED) intensity oscillations from layer-by-layer growth were observed. The deposited films were found to have approximately stoichiometric compositions of BaTiO3 and SrTiO3. Oxygen was automatically fed from the substrate during the growths. It was found that the BaTiO3/SrTiO3 interface was abrupt without intermixing, despite a considerable amount of oxygen seems to have moved from the substrate to the film through the interface.

High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method

2010 ◽  
Vol 518 (16) ◽  
pp. 4529-4532 ◽  
Author(s):  
A.I. Ievtushenko ◽  
V.A. Karpyna ◽  
V.I. Lazorenko ◽  
G.V. Lashkarev ◽  
V.D. Khranovskyy ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Layer Growth ◽  
Radio Frequency Magnetron ◽  
Zno Films ◽  
Layer By Layer ◽  
Radio Frequency Magnetron Sputtering ◽  
High Quality ◽  
Growth Method

GROWTH OF ULTRATHIN Rh FILMS ON Fe(100)

2003 ◽  
Vol 10 (01) ◽  
pp. 117-120 ◽  
Author(s):  
R. PFANDZELTER ◽  
M. LANG ◽  
H. WINTER ◽  
I. URAZGIL'DIN
Keyword(s):  
Film Growth ◽  
Incidence Angle ◽  
Layer Growth ◽  
Layer By Layer ◽  
Monolayer Film ◽  
Initial Layer ◽  
Surface Lattice ◽  
Grazing Scattering

The growth and structure of ultrathin Rh films on Fe(100) are studied by grazing scattering of 50 keV He projectiles, incident along "random" and low index surface lattice directions. Oscillations in the specular intensity for scattered ions indicate initial layer-by-layer growth, followed by multilayer growth on top of the two-monolayer film. Growth temperatures below about 400 K result in a persistent though rough layer growth up to higher coverages. From distinct maxima in the target current as a function of the azimuthal incidence angle, we deduce that growth is epitaxial and pseudomorphic.

scholarly journals Dichotomy of the photo-induced 2-dimensional electron gas on SrTiO3 surface terminations

2019 ◽  
Vol 116 (34) ◽  
pp. 16687-16691 ◽  
Author(s):  
Slavko N. Rebec ◽  
Tao Jia ◽  
Hafiz M. Sohail ◽  
Makoto Hashimoto ◽  
Donghui Lu ◽  
...  
Keyword(s):  
Uv Light ◽  
Electron Gas ◽  
Layer Growth ◽  
Photoemission Spectroscopy ◽  
Layer By Layer ◽  
Oxide Materials ◽  
Dimensional Electron ◽  
High Quality ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Dimensional Electron Gas

Oxide materials are important candidates for the next generation of electronics due to a wide array of desired properties, which they can exhibit alone or when combined with other materials. While SrTiO3 (STO) is often considered a prototypical oxide, it, too, hosts a wide array of unusual properties, including a 2-dimensional electron gas (2DEG), which can form at the surface when exposed to ultraviolet (UV) light. Using layer-by-layer growth of high-quality STO films, we show that the 2DEG only forms with the SrO termination and not with the TiO2 termination, contrary to expectation. This dichotomy of the observed angle-resolved photoemission spectroscopy (ARPES) spectra is similarly seen in BaTiO3 (BTO), in which the 2DEG is only observed for BaO-terminated films. These results will allow for a deeper understanding and better control of the electronic structure of titanate films, substrates, and heterostructures.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

Sign in / Sign up

Export Citation Format

Share Document