Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges

1995 ◽  
Vol 387 ◽  
Author(s):  
J. L. Hoyt ◽  
P. Kuo ◽  
K. Rim ◽  
J. J. Welser ◽  
R. M. Emerson ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Layer Growth ◽  
Point Of View ◽  
Atomic Layer Epitaxy ◽  
Future Research ◽  
Layer By Layer ◽  
Limited Growth ◽  
Measurement And Control

AbstractMaterial and device challenges for Rapid Thermal Processing (RTP) of heterostructures are discussed, focusing on RTP-based epitaxy in the Si/Si1−xGex system. While RTP-based heteroepitaxy offers enhanced processing flexibility, it also poses significant challenges for temperature measurement and control. Several examples of Si/Si1−xGex device structures are discussed from the point of view of the sensitivity of device parameters to variations in layer thickness and composition. The measured growth kinetics for Si and Si1−xGex are then used to estimate growth temperature tolerances for these structures. Demanding applications are expected to require temperature control and uniformity to within 0.5°C.Future research challenges include the fabrication of structures with monolayer thickness control using self-limited growth techniques. Atomic layer epitaxy (ALE) is a well-known example of such a growth technique. In ALE, the wafer is cyclically exposed to different reactants, to achieve layer-by-layer growth. An RTP-based atomic layer epitaxy process, and its application to the growth of CdTe films, is briefly discussed. The extension to Column IV alloys follows readily. The RTP-based process enables self-limited growth for precursor combinations for which isothermal ALE is not feasible.

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

Sulfur-Passivation Pretreatment of GaAs Surface for Layer-by-Layer Growth and Atomic Layer Epitaxy of ZnSe by MOMBE

1990 ◽  
Author(s):  
Shigeo FUJITA ◽  
Yi-hong WU ◽  
Yasunori MIYAZAKI ◽  
Takashi TOYODA ◽  
Yoichi KAWAKAMI ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Layer Growth ◽  
Gaas Surface ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Sulfur Passivation

scholarly journals Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 291
Author(s):  
Alberto Perrotta ◽  
Julian Pilz ◽  
Roland Resel ◽  
Oliver Werzer ◽  
Anna Maria Coclite
Keyword(s):  
Atomic Layer ◽  
Layer Growth ◽  
Growth Mode ◽  
Ex Situ ◽  
Native Oxide ◽  
Layer By Layer ◽  
Initial Growth ◽  
Island Growth ◽  
X Ray ◽  
Crystallization Onset

Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a combination of spectroscopic ellipsometry and X-ray based techniques (diffraction, reflectivity, and fluorescence). Differently from the growth mode usually reported for thermal ALD ZnO (i.e., substrate-inhibited island growth), the effect of plasma surface activation resulted in a substrate-enhanced island growth. A transient region of accelerated island formation was found within the first 2 nm of deposition, resulting in the growth of amorphous ZnO as witnessed with grazing incidence X-ray diffraction. After the islands coalesced and a continuous layer formed, the first crystallites were found to grow, starting the layer-by-layer growth mode. High-temperature ALD ZnO layers were also investigated in terms of crystallization onset, showing that layers are amorphous up to a thickness of 3 nm, irrespective of the deposition temperature and growth orientation.

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

Atomic Layer Growth of SiO2 on Si(100) Using the Sequential Deposition of SiCl4 and H2O

1993 ◽  
Vol 334 ◽  
Author(s):  
Ofer Sneh ◽  
Michael L. Wise ◽  
Lynne A. Okada ◽  
Andrew W. Ott ◽  
Steven M. George
Keyword(s):  
High Pressure ◽  
Film Growth ◽  
Atomic Layer ◽  
Reaction Scheme ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
High Pressure Cell ◽  
Experimental Apparatus ◽  
Binary Reaction

AbstractThis study explored the surface chemistry and the promise of the binary reaction scheme:(A) Si-OH+SiCl4 → Si-Cl + HCl(B) Si-Cl + H2O → Si-OH + HClfor controlled SiO2 film deposition. In this binary ABAB… sequence, each surface reaction may be self-terminating and ABAB… repetitive cycles may produce layer-by-layer controlled deposition. Using this approach, the growth of SiO2 thin films on Si(100) with atomic layer control was achieved at 600 K with pressures in the 1 to 50 Torr range. The experiments were performed in a small high pressure cell situated in a UHV chamber. This design couples CVD conditions for film growth with a UHV environment for surface analysis using laser-induced thermal desorption (LITD), temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). The controlled layer-by-layer deposition of SiO2 on Si(100) was demonstrated and optimized using these techniques. A stoichiometric and chlorine-free SiO2 film was also produced as revealed by TPD and AES analysis. SiO2 growth rates of approximately 1 ML of oxygen per AB cycle were obtained at 600 K. These studies demonstrate the methodology of using the combined UHV/high pressure experimental apparatus for optimizing a binary reaction CVD process.

scholarly journals A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 164
Author(s):  
Jau-Shiung Fang ◽  
Yu-Fei Sie ◽  
Yi-Lung Cheng ◽  
Giin-Shan Chen
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Open Circuit ◽  
Electrochemical Process ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
Cu Interconnects ◽  
Electrochemical Growth ◽  
Growth Method

A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics.

Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

1991 ◽  
Vol 224 ◽  
Author(s):  
Hisham Z. Massoud ◽  
Ronald K. Sampson ◽  
Kevin A. Conrad ◽  
Yao-Zhi Hu ◽  
Eugene A. Irene
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Index Of Refraction ◽  
Strong Temperature Dependence ◽  
Heating And Cooling ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

Investigation of growth rates and morphology for diamond growth by chemical vapor deposition

1992 ◽  
Vol 7 (6) ◽  
pp. 1438-1444 ◽  
Author(s):  
M.P. Everson ◽  
M.A. Tamor
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Layer Growth ◽  
Diamond Growth ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Tunneling Microscopy ◽  
Limited Growth ◽  
Diffusion Limited

We describe two complementary studies of diamond growth by chemical vapor deposition. In the first, the early stages of growth of randomly distributed nuclei on silicon are studied by scanning tunneling microscopy. For growth times from 1 to 30 min nearly all crystallites are three dimensional, and increase in volume as t1.5. Although this result could be interpreted in terms of diffusion limited growth, the conditions for diamond CVD are more consistent with rate limited growth where the crystals are expected to gain volume as t3. This anomaly can be explained in terms of a two-species growth mechanism in which the rate constant for carbon addition is proportional to the diffusion limited flux of atomic hydrogen. Other mechanisms giving rise to the observed t1.5 dependence are also considered. The second study uses both scanning electron and tunneling microscopies to examine the morphology of a boron-doped film homoepitaxial to the {100} surface of natural type 2a diamond. In regions distant from gross defects, this film is very smooth. However, gross defects appear to initiate growth of new epitaxial layers at a rate much higher than in defect-free regions. This observation suggests that diamond growth is promoted by “enabling defects” and that without such defects nucleation of new layers is a slow process and permits layer-by-layer growth at a much lower rate.

Rapid thermal processing of hafnium dioxide thin films by remote plasma atomic layer deposition as high-k dielectrics

2018 ◽  
Vol 660 ◽  
pp. 797-801 ◽  
Author(s):  
Xiao-Ying Zhang ◽  
Chia-Hsun Hsu ◽  
Yun-Shao Cho ◽  
Sam Zhang ◽  
Shui-Yang Lien ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Remote Plasma ◽  
Layer Deposition ◽  
High K
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