Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

2004 ◽  
Vol 462-463 ◽  
pp. 15-18 ◽  
Author(s):  
Chang Seo Park ◽  
Byung Jin Cho ◽  
N. Balasubramanian ◽  
Dim-Lee Kwong
Keyword(s):  
Aluminum Nitride ◽  
Buffer Layer ◽  
Feasibility Study ◽  
Nitride Film ◽  
Metal Gate ◽  
Thin Aluminum ◽  
Dual Metal

An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

2003 ◽  
Vol 24 (5) ◽  
pp. 298-300 ◽  
Author(s):  
Chang Seo Park ◽  
Byung Jin Cho ◽  
Dim-Lee Kwong
Keyword(s):  
Aluminum Nitride ◽  
Buffer Layer ◽  
Cmos Process ◽  
Metal Gate ◽  
Dual Metal

Modeling of very thin aluminum nitride film mechanical properties from nanoindentation measurements

2015 ◽  
Vol 594 ◽  
pp. 129-137 ◽  
Author(s):  
F. Roudet ◽  
D. Chicot ◽  
X. Decoopman ◽  
A. Iost ◽  
J. Bürgi ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Aluminum Nitride ◽  
Nitride Film ◽  
Thin Aluminum

CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals

2009 ◽  
Vol 95 (3) ◽  
pp. 753-756 ◽  
Author(s):  
Y. Liu ◽  
T. P. Chen ◽  
M. Yang ◽  
Z. H. Cen ◽  
X. B. Chen ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Nitride Film ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Thin Aluminum ◽  
Cmos Compatible

Thin aluminum nitride film resonators: miniaturized high sensitivity mass sensors

1992 ◽  
Vol 64 (11) ◽  
pp. 1289-1294 ◽  
Author(s):  
Ronald P. O'Toole ◽  
Stanley G. Burns ◽  
Glenn J. Bastiaans ◽  
Marc D. Porter
Keyword(s):  
Aluminum Nitride ◽  
High Sensitivity ◽  
Nitride Film ◽  
Mass Sensors ◽  
Thin Aluminum

Metal Wet Etch Process Development for Dual Metal Gate CMOS

2005 ◽  
Vol 8 (12) ◽  
pp. G333 ◽  
Author(s):  
Muhammad Mustafa Hussain ◽  
Naim Moumen ◽  
Joel Barnett ◽  
Jason Saulters ◽  
David Baker ◽  
...  
Keyword(s):  
Process Development ◽  
Metal Gate ◽  
Dual Metal ◽  
Wet Etch

scholarly journals Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

PLoS ONE ◽  
2015 ◽  
Vol 10 (7) ◽  
pp. e0133479 ◽  
Author(s):  
Khaled Sayed Elbadawi Ramadan ◽  
Stephane Evoy
Keyword(s):  
Low Temperature ◽  
Aluminum Nitride ◽  
Reactive Sputtering ◽  
Thin Aluminum

scholarly journals Effect of nitrogen gas pressure and ionization current on deposition of aluminum nitride film by reactive ion plating.

1987 ◽  
Vol 38 (6) ◽  
pp. 228-233
Author(s):  
Saburou KUWANO ◽  
Masahiro SUGIYAMA ◽  
Yoshio SHIBUYA ◽  
Terunori OOTAKE ◽  
Takeo OKI
Keyword(s):  
Aluminum Nitride ◽  
Gas Pressure ◽  
Nitride Film ◽  
Nitrogen Gas ◽  
Ion Plating ◽  
Ionization Current

Aluminum nitride buffer layer for diamond film growth

1996 ◽  
Vol 11 (7) ◽  
pp. 1810-1818 ◽  
Author(s):  
V. P. Godbole ◽  
J. Narayan
Keyword(s):  
Aluminum Nitride ◽  
Buffer Layer ◽  
Diamond Film ◽  
High Speed ◽  
Film Growth ◽  
High Speed Steel ◽  
Bearing Steel ◽  
Low Carbon ◽  
Wide Range ◽  
Steel Substrates

The role of aluminum nitride (AlN) as a buffer layer on the nucleation and growth of diamond on silicon and steel substrates during hot filament chemical vapor deposition (HF-CVD) has been investigated systematically. The scanning Auger electron microscopy (AES) is employed to study chemistry and content of carbon on the surface and in subsurface regions of AlN as a function of HF-CVD parameters. It is found that AlN offers an excellent diffusion barrier for carbon over a wide range of temperature and hydrocarbon content of CVD gas environment, with simultaneous inhibition of graphitization. It also facilitates nucleation of diamond phase. The surface reactions between AlN and carbon are discussed in terms of hydrogen-assisted phase transformations. We have developed a two-step procedure to obtain a continuous diamond film on steel substrates. The characteristic features of AlN have been exploited to obtain adherent and graphite-free diamond deposits on various types of steels, including low carbon steel, tool steel, high speed steel, and bearing steel.

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