Single crystal CrN/ScN superlattice soft X-ray mirrors: Epitaxial growth, structure, and properties

2006 ◽  
Vol 514 (1-2) ◽  
pp. 10-19 ◽  
Author(s):  
J. Birch ◽  
T. Joelsson ◽  
F. Eriksson ◽  
N. Ghafoor ◽  
L. Hultman
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Structure And Properties ◽  
X Ray ◽  
Growth Structure

Synthesis, Structure and Properties of Two-Dimensional Coordination Polymer Based on 3,5-di(benzimidazol-1-yl)pyridine

2020 ◽  
Vol 42 (2) ◽  
pp. 249-249
Author(s):  
Guo Jun Wu Guo Jun Wu
Keyword(s):  
Infrared Spectroscopy ◽  
Coordination Polymer ◽  
Single Crystal ◽  
Photocatalytic Degradation ◽  
Elemental Analysis ◽  
Solvothermal Reaction ◽  
Two Dimensional ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
X Ray

[Cu(L)(AIP)·1.5H2O]n (1) [L= 3,5-di(benzimidazol-1-yl)pyridine, H2AIP= 5-aminoisophthalic acid] was prepared by the solvothermal reaction, which was characterized by single-crystal X–ray diffraction, infrared spectroscopy, and elemental analysis. 1 exhibits an infinite two dimensional [Cu(AIP)]n sheet parallel to (0 1 1) crystal plane. Furthermore, complex 1 displays good photocatalytic degradation of methyl blue (MB).

Epitaxial growth of magnesia and spinel on sapphire during incongruent reduction in molten magnesium

1999 ◽  
Vol 14 (8) ◽  
pp. 3312-3318 ◽  
Author(s):  
P. Kumar ◽  
S. A. Dregia ◽  
K. H. Sandhage
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Pole Figure ◽  
Epitaxial Layer ◽  
Orientation Relationships ◽  
X Ray ◽  
Oxide Phases ◽  
Sapphire Single Crystal ◽  
Molten Magnesium

The types and structures of oxide phases produced during the incongruent reduction of sapphire (single-crystal Al2O3) by molten magnesium were examined. Polished faces of sapphire were exposed to molten magnesium at 1000 °C for 100 h. Such exposure resulted in the formation of a continuous, epitaxial layer of spinel (MgAl2O4) on sapphire and a continuous, epitaxial layer of magnesia (MgO) on the spinel. X-ray pole figure analyses indicated that two variants of spinel and magnesia had formed in a manner consistent with the following orientation relationships:

Epitaxial growth, structure and properties of Ni films grown on MgO(100) by d.c. bias sputter deposition

1994 ◽  
Vol 241 (1-2) ◽  
pp. 9-11 ◽  
Author(s):  
H. Qiu ◽  
A. Kosuge ◽  
H. Maruyama ◽  
M. Adamik ◽  
G. Safran ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Sputter Deposition ◽  
Structure And Properties ◽  
Growth Structure

scholarly journals Фазовые равновесия в системах Ag8SnS6–Cu2SnS3 и Ag2SnS3–Cu2Sn4S9

2019 ◽  
Vol 21 (4) ◽  
pp. 544-551
Author(s):  
Vidadi A. Rzaguliyev ◽  
Oruj S. Kerimli ◽  
Dilbar S. Ajdarova ◽  
Sharafat H. Mammadov ◽  
Ozbek M. Aliev
Keyword(s):  
Crystal Structure ◽  
Experimental Study ◽  
Phase Equilibria ◽  
Single Crystal ◽  
Electromotive Force ◽  
Structure And Properties ◽  
Doctoral Thesis ◽  
X Ray ◽  
Alloys And Compounds

Комплексными методами физико-химического анализа (дифференциально-термический, рентгенофазовый, микроструктурный, измерение микротвердости и определение плотности) изучены фазовые равновесия и построены Т–х фазовые диаграммыв системах Ag8SnS6–Cu2SnS3 и Ag2SnS3–Cu2Sn4S9. Показано, что система Ag8SnS6–Cu2SnS3является квазибинарным сечением квазитройной системы Ag2S-SnS2-Cu2S и относится кпростому эвтектическому типу с ограниченными областями растворимости на основеисходных сульфидов. Координаты эвтектической точки: 50 mol % Ag2SnS3 И Т = 900 К.Растворимость на основе Ag8SnS6 и Cu2SnS3 при эвтектической температуре простираетсядо 20 и 28 mol % соответственно. С уменьшением температуры твердые растворы распадаются и при 300 К составляют 5 и 10 mol %. Установлено, что с увеличением концентрацииAg8SnS6 в твердых растворах (Cu2SnS3)1-х (Ag8SnS6)х параметр кубической решетки увеличивается от а = 0.5445 nm (для чистого Cu2SnS3) до а = 0.725 nm (для состава х = 0.1) т. е. концентрационная зависимость параметра решетки имеет линейный характер.Система Ag2SnS3–Cu2Sn4S9 из-за перитектического плавления Cu2Sn4S9 имеет сложный характер и является частично квазибинарным сечением. Квазибинарность нарушается вобласти концентрации 65-100 mol % Cu2Sn4S9 и выше температуры 900 К. Твердые растворына основе Ag2SnS3 и Cu2Sn4S9 узкие и при 300 К составляют 10; 2.5 mol % соответственно         ЛИТЕРАТУРА1. Wang N., Fan A. K. An experimental study of the Ag2S-SnS2 pseudobinary join // Neues Jahrb. Mineral.-Abh, 1989, v. 160, pp. 33–36.2. Wang N. New data for Ag8SnS6 (canfeildite) and Ag8GeS6 (argyrodite) // Neues Jahrb. Mineral. Monatsh.,1978, pp. 269–272.3. Бабанлы М. Б., Юсибов Ю. А., Абишев В. Т. Трехкомпонентные халькогениды на основе медии серебра. Баку: Изд-во БГУ, 1993, 342 с.4. Parasyuk O. V., Chykhrij S. I., Bozhko V. V., Piskach L. V., Bogdanyuk M. S., Olekseyuk I. D.,Bulatetska L. V., Pekhnyo. Phase diagramm of the Ag2S–HgS–SnS2 system and single crystal prepartion,crystal structure and properties of Ag2HgSnS4 // J. Alloys and Compounds, 2005, v. 399, pp. 32–37. DOI:            https://doi.org/10.1016/j.jallcom.2005.03.0085. Olekseyuk I. D., Dudchak I. B., Piskach L. V. Phase equilibria in the Cu2S–ZnSe–SnS2 // J. Alloys andCompounds, 2004, v. 368, pp. 135–143. https:doi.org/10.1016/j.jallcom.2003.08.0846. Ollitrault-Fitchet R., Rivet J., Flahaut J., et.al. Description du systeme ternaire Ag–Sn–Se // J. Less-Common. Met., 1988, v. 138(2), pp. 241–261. DOI:https://doi.org/10.1016/0022-5088(88)90113-07. Delgado C. E., Mora A. J., Marcano E. Crystal structure refi nement of the semiconducting compoundCu2SnSe3 from X-ray powder difraction data // Mater. Res. Bull., 2003, v. 38, pp. 1949–1955. DOI: https://doi.org/10.1016/j.materresbull.2003.09.0178. Parasyuk O. V., Olekseyuk I. D., Marchuk O. V. The Cu2Se–HgSe–SnSe2 // J. Alloys and Compounds.,1999, v. 287, pp. 197–205. DOI: https//doi.org/10.1016/S0925-8388(99)00047-X9. Parasyuk O. V., Gulay L. D., Piskach L. V., Kumanska Yu. O. The Ag2Se–HgSe–SnSe2 system and thecrystal structure of the Ag2HgSnSe4 // J. Alloys and Сompounds, 2002, v. 339, pp.1 40–143. DOI: https//doi.org/10.1016/S0925-8388(01)01985-510. Babanly M. B., Yusibov Y. A., Babanly N. B. Electromotive force and measucement in several systema.Ed. by S. Kara, Intechneb. Org., 2011, pp. 57–58.11. Gulay L. D., Olekseyuk I. D., Parasyuk O. V. Crystal structure of b-Ag8SnSe6 // J. Alloys and compounds,2002, v. 339, pp. 113–117. DOI: https//doi.org/10.1016/S0925-8388(01)01970-312. Гусейнов Г. М. Получение соединения Ag8SnS6 в среде диметилформамида // Вестн. Томского гос. ун-та. Химия, 2016, № 1(3), c. 24–34. Режим доступа: fi le:///C:/Users/Lab351/Downloads/sub_%20%20in%20dimethylformamide%20medium.pdf (дата обращения: 19.09.2019)13. Gorchov O. Les composes Ag8MX6 (M = Si, Ge, Sn et X = S, Se, Te) // Bull. Soc. Chim. Fr., 1968, № 6.pp. 2263–2275.14. Kokhan O. P. The Interactions in Ag2X–BIVX2 (BIV – Si, Ge, Sn; X – S, Se) systems and the propertiesof compounds. Doctoral Thesis, Uzhgorod, Uzhgorod State Univ., 1996.15. Onoda U., Chen X. A., Sato A., Wada H. Crystal structure and twinning of monoclinic Cu2SnS3 // Mater.Res. Bull., 2000, v. 35, № 8, pp. 1563–1570. DOI: https//doi.org/10.1016/S0025-5408(00)00347-016. Рзагулиев В. А., Керимли О. Ш., Мамедов Ш. Г. Изучение квазитройной системы Ag2S–SnS2–Cu2S по разрезу Ag8SnS6–Cu2SnS3. Труды Международ. научно–практич. конф., Россия, Белгород,2019, c. 18.17. Рзагулиев В. А., Керимли О. Ш., Маме дов Ш. Г. Исследование квазибинарного разреза Cu2SnS3–Ag2SnS3 в квазитройной системеAg2S–Cu2S–SnS2 . Труды XXI Междун. конф., Санкт-Петербург, 2019,c. 20–21.18. Цигика В. В., Переш Е. Ю., Лазарев В. В. и др. Получение и свойства мнонокристаллов соединений/TlPbJ3, Tl3PbJ5, TlSnJ3, TlSn2J5 and Tl3PbBr5 Изв. АН СССР. Неорган. материалы, 1981, т. 17(6), c. 970–974.

Epitaxial Growth of MgO Single Crystal Thin Film in Oxygen Atmosphere

1992 ◽  
Vol 279 ◽  
Author(s):  
M. H. Yang ◽  
C. P. Flynn
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Bulk Diffusion ◽  
Oxygen Atmosphere ◽  
Mass Action ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Studies ◽  
Mgo Substrate

ABSTRACTWe have studied the epitaxial growth of MgO single crystal thin films by depositing Mg onto MgO substrates in an oxygen atmosphere. This method provides a simple way to dope Mg18O layers uniformly into Mg16O. The well controlled layer thicknesses are suitable for bulk diffusion studies both in the MgO epilayer and the MgO substrate. The MgO growth rate was measured and found to be proportional to the Mg flux and to the square root of oxygen pressure at a given temperature, obeying the law of mass action. High quality MgO single crystal thin films, as indicated by RHEED and x-ray diffraction, were found to grow over u wide temperature range, as in the earlier work1 using e-beam evaporation.

Epitaxial Growth of CaxSr1−xF2 Layers on CaF2 by Vacuum Evaporation

1985 ◽  
Vol 54 ◽  
Author(s):  
Nicholas G. Norton ◽  
K. S. Knight
Keyword(s):  
Single Crystal ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Single Phase ◽  
Epitaxial Films ◽  
Mixed Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Substrate Temperatures

ABSTRACTThe evaporation and epitaxial growth on single crystal CaF2 substrates of CaF2/SrF2 mixtures are investigated. The evaporated films are studied with X-ray diffraction and optical microscopy.X-ray diffraction results show that the evaporation of yCaF2 + (1 - y)SrF2 mixtures from a single boat, with y in the range 0 to 1, result in single phase, mixed crystals of composition CaxSr1−xF2. If Vegard's law is assumed to apply it is found experimentally that the film composition is the same as that of the source.For the evaporation of CaF2 and SrF2 onto cleaved CaF2 crystals it is shown that the best quality epitaxial films are obtained at substrate temperatures of∼400°C. At temperatures <400°C there is some broadening of the X-ray diffraction spots from the overlayer compared with those from the substrate. At temperatures>400°C there is a tendency for the epitaxial films to delaminate from the substrate.

Growth, structure and properties of Y2Cu2O5 single crystal

1994 ◽  
Vol 141 (1-2) ◽  
pp. 153-158 ◽  
Author(s):  
Wen-Jye Jang ◽  
Masashi Hasegawa ◽  
Tong Rong Zhao ◽  
Humihiko Takei ◽  
Masafumi Tamura ◽  
...  
Keyword(s):  
Single Crystal ◽  
Structure And Properties ◽  
Growth Structure

Unique molecular structure and properties of novel purple intermediates of phthalocyanine derivative

2003 ◽  
Vol 07 (01) ◽  
pp. 58-69 ◽  
Author(s):  
Fumiihiro Maeda ◽  
Kenjiro Uno ◽  
Kazuchika Ohta ◽  
Makiko Sugibayashi ◽  
Naotake Nakamura ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Crystal Structure ◽  
Single Crystal ◽  
Metal Salt ◽  
Crystal Structure Analysis ◽  
Structure And Properties ◽  
Reaction Conditions ◽  
X Ray ◽  
Microwave Reactor ◽  
Single Crystal Structure Analysis

When long alkylthio-substituted phthalocyaninato copper(II) complexes, ( C n S )8 PcCu , were rapidly prepared in an α-diol by using our developed see-through microwave reactor and/or a conventional hot stirrer, novel purple intermediates were selectively obtained instead of the expected green complex, ( C n S )8 PcCu , for some specific combinations of the reaction solvent and metal salt. The reaction conditions to obtain the purple intermediates were established and the unique molecular structure was clarified for a buthylthio-substituted intermediate by X-ray single crystal structure analysis.

Synthese, Kristallstruktur und Eigenschaften von 1,1,1,3,3, 3 - Hexaamino - 1λ5,3λ5-diphosphazeniumehlorid [(NH2)3PNP(NH2)3]Cl / Synthesis, Crystal Structure, and Properties of 1,1,1,3,3,3-Hexaamino- 1λ5 ,3λ5-diphosphazenium Chloride [(NH2)3 PNP(NH2)3 ]Cl

1996 ◽  
Vol 51 (12) ◽  
pp. 1732-1738 ◽  
Author(s):  
Stefan Horstmann ◽  
Wolfgang Schnick
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Acetonitrile Solution ◽  
Structure And Properties ◽  
X Ray ◽  
Ray Methods

[(NH2)3PNP(NH2)3]Cl has been prepared by a three step synthesis. The last step is the ammonolysis of [Cl3PNPCl3]Cl. Single crystals of 1,1,1,3,3,3-hexaamino-1λ5, 3λ5-diphosphazenium chloride were obtained from an acetonitrile solution in a temperature gradient between 60 °C and room temperature. Between room temperature and -100 °C [(NH2)3PNP(NH2)3]Cl is subject to a phase transition. Therefore, the crystal structure was determined by single crystal X-ray methods at room temperature (P1̄, a = 584.7(1) pm, b = 732.1(1) pm, c = 1092.0(2) pm. q = 71.05(3)°, β = 76.36(3)°, γ = 89.83(3)°, Z = 2, R = 4.75 %, wR = 2.47 %). The cation [(NH2)3PNP(NH2)3]+ is built up by two corner sharing PN4 tetrahedra. Remarkably short P-N bonding distances have been observed and both PN4 tetrahedra exhibit a significant distortion resulting in two large and four small N-P-N bond angles.

Noncentrosymmetric Orthophosphate YM3(PO4)3 (M = Sr, Ba) Crystals: Single Crystal Growth, Structure, and Properties

2020 ◽  
Vol 20 (4) ◽  
pp. 2390-2397 ◽  
Author(s):  
Guangda Wu ◽  
Mengdi Fan ◽  
Chao Jiang ◽  
Feifei Chen ◽  
Fapeng Yu ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Structure And Properties ◽  
Growth Structure
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