Sn–Ag–Cu solder reaction with Au/Pd/Ni(P) and Au/Pd(P)/Ni(P) platings

2013 ◽  
Vol 544 ◽  
pp. 551-556 ◽  
Author(s):  
C.E. Ho ◽  
Y.C. Lin ◽  
S.J. Wang
Keyword(s):  
2003 ◽  
Vol 18 (1) ◽  
pp. 4-7 ◽  
Author(s):  
Y. C. Sohn ◽  
Jin Yu ◽  
S. K. Kang ◽  
W. K. Choi ◽  
D. Y. Shih

The reaction mechanism between electroless Ni–P and Sn was investigated to understand the effects of Sn on solder reaction-assisted crystallization at low temperatures as well as self-crystallization of Ni–P at high temperatures. Ni3Sn4 starts to form in a solid-state reaction well before Sn melts. Heat of reaction for Ni3Sn4 was measured during the Ni–P and Sn reaction (241.2 J/g). It was found that the solder reaction not only promotes crystallization at low temperatures by forming Ni3P in the P-rich layer but also facilitates self-crystallization of Ni–P by reducing the transformation temperature and heat of crystallization. The presence of Sn reduces the self-crystallization temperature of Ni–P by about 10 °C. The heat of crystallization also decreases with an increased Sn thickness.


2021 ◽  
Vol 21 (8) ◽  
pp. 4503-4507
Author(s):  
Seong Min Yun ◽  
Injoon Son ◽  
Sung Hwa Bae

In thermoelectric modules, multiple n-type and p-type thermoelectric elements are electrically connected in series on a Cu electrode that is bonded to a ceramic substrate. Defects in the bond between the thermoelectric elements and the Cu electrode could impact the performance of the entire thermoelectric module. This study investigated the effect of plating layers on the bonding strength of p-type Bi–Te thermoelectric elements. Ni and Pd electroplating was applied to Bi–Te thermoelectric elements; further, electroless Ni–P immersion gold (ENIG) plating was applied to Cu electrodes bonded to ceramic substrates. Forming a Pd/Ni electroplating layer on the surface of thermoelectric elements and an ENIG plating layer on the surface of the Cu electrode improved the bonding strength by approximately 3.5 times. When the Pd/Ni and ENIG plating layers were formed on Bi–Te elements and Cu substrates, respectively, the solderability greatly increased; as the solderability increased, the thickness of the diffusion layer formed with the solder layer increased. The improved bonding strength of the Pd/Ni plated thermoelectric element bonded on the ENIG plated substrate is attributed to the enhanced solderability due to the rapid inter-diffusion of Pd and Au into the solder layer and the formation of a stable and non-defected solder reaction interface layer.


1996 ◽  
Vol 35 (1) ◽  
pp. 65-69 ◽  
Author(s):  
Tao Liu ◽  
D. Kim ◽  
D. Leung ◽  
M.A. Korhonen ◽  
C.-Y. Li

2009 ◽  
Vol 19 (5) ◽  
pp. 616-622 ◽  
Author(s):  
Guangchen Xu ◽  
Fu Guo ◽  
Zhidong Xia ◽  
Yongping Lei ◽  
Yaowu Shi ◽  
...  

2020 ◽  
Vol 395 ◽  
pp. 125879
Author(s):  
C.Y. Lee ◽  
S.P. Yang ◽  
C.H. Yang ◽  
M.K. Lu ◽  
T.T. Kuo ◽  
...  
Keyword(s):  

Coatings ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 213
Author(s):  
Sung Bae ◽  
Sungsoon Kim ◽  
Seong Yi ◽  
Injoon Son ◽  
Kyung Kim ◽  
...  

In this study, electroless-plating of a nickel-phosphor (Ni–P) thin film on surface-controlled thermoelectric elements was developed to significantly increase the bonding strength between Bi–Te materials and copper (Cu) electrodes in thermoelectric modules. Without electroless Ni–P plating, the effect of surface roughness on the bonding strength was negligible. Brittle SnTe intermetallic compounds were formed at the bonding interface of the thermoelectric elements and defects such as pores were generated at the bonding interface owing to poor wettability with the solder. However, defects were not present at the bonding interface of the specimen subjected to electroless Ni–P plating, and the electroless Ni–P plating layer acted as a diffusion barrier toward Sn and Te. The bonding strength was higher when the specimen was subjected to Ni–P plating compared with that without Ni–P plating, and it improved with increasing surface roughness. As electroless Ni–P plating improved the wettability with molten solder, the increase in bonding strength was attributed to the formation of a thicker solder reaction layer below the bonding interface owing to an increase in the bonding interface with the solder at higher surface roughness.


2012 ◽  
Vol 539 ◽  
pp. 57-62 ◽  
Author(s):  
C. Key Chung ◽  
T.C. Huang ◽  
R. Shia ◽  
T.L. Yang ◽  
C.R. Kao
Keyword(s):  

1999 ◽  
Vol 85 (12) ◽  
pp. 8456-8463 ◽  
Author(s):  
J. W. Jang ◽  
P. G. Kim ◽  
K. N. Tu ◽  
D. R. Frear ◽  
P. Thompson

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