The effects of UV radiation on SiC(O)N/SiOC(−H) thin films grown on Si substrates using plasma-enhanced atomic layer deposition

2013 ◽  
Vol 547 ◽  
pp. 151-155 ◽  
Author(s):  
R. Navamathavan ◽  
Chang Young Kim ◽  
Heon Ju Lee ◽  
YoungHun Yu ◽  
Chi Kyu Choi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Uv Radiation ◽  
Atomic Layer ◽  
Si Substrates ◽  
Layer Deposition

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing

2007 ◽  
Vol 7 (11) ◽  
pp. 3758-3764
Author(s):  
Byoung H. Lee ◽  
Myung M. Sung
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Microcontact Printing ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Si Substrates ◽  
Layer Deposition ◽  
Assembled Monolayers

We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monolayers do not have any functional group to react with precursors.

Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing

2007 ◽  
Vol 7 (11) ◽  
pp. 3758-3764 ◽  
Author(s):  
Byoung H. Lee ◽  
Myung M. Sung
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Microcontact Printing ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Si Substrates ◽  
Layer Deposition ◽  
Assembled Monolayers

We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monolayers do not have any functional group to react with precursors.

Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

2006 ◽  
Vol 252 (24) ◽  
pp. 8506-8509 ◽  
Author(s):  
Nam Kyun Park ◽  
Dong Kyun Kang ◽  
Byong-Ho Kim ◽  
Sang Jin Jo ◽  
Jeong Sook Ha
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Si Substrates ◽  
Layer Deposition

XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates

2020 ◽  
Vol 38 (3) ◽  
pp. 032402
Author(s):  
Spyridon Korkos ◽  
Nikolaos J. Xanthopoulos ◽  
Martha A. Botzakaki ◽  
Charalampos Drivas ◽  
Styliani Kennou ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Electrical Conduction ◽  
Atomic Layer ◽  
Xps Analysis ◽  
Si Substrates ◽  
Conduction Mechanisms ◽  
Layer Deposition ◽  
Electrical Conduction Mechanisms

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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