Surrounding rock failure analysis of retreating roadways and the control technique for extra-thick coal seams under fully-mechanized top caving and intensive mining conditions: A case study

2020 ◽  
Vol 97 ◽  
pp. 103241 ◽  
Author(s):  
Hong Yan ◽  
Jixiong Zhang ◽  
Ruimin Feng ◽  
Wei Wang ◽  
Yiwen Lan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Rock Failure ◽  
Surrounding Rock ◽  
Control Technique ◽  
Coal Seams ◽  
Mining Conditions

scholarly journals Cooperative Control Mechanism of Long Flexible Bolts and Blasting Pressure Relief in Hard Roof Roadways of Extra-Thick Coal Seams: A Case Study

2021 ◽  
Vol 11 (9) ◽  
pp. 4125
Author(s):  
Zhe Xiang ◽  
Nong Zhang ◽  
Zhengzheng Xie ◽  
Feng Guo ◽  
Chenghao Zhang
Keyword(s):  
Coal Seam ◽  
Cooperative Control ◽  
Field Tests ◽  
Surrounding Rock ◽  
Deep Hole ◽  
Coal Seams ◽  
Thick Coal Seam ◽  
Structure Damage ◽  
Hard Roof

The higher strength of a hard roof leads to higher coal pressure during coal mining, especially under extra-thick coal seam conditions. This study addresses the hard roof control problem for extra-thick coal seams using the air return roadway 4106 (AR 4106) of the Wenjiapo Coal Mine as a case study. A new surrounding rock control strategy is proposed, which mainly includes 44 m deep-hole pre-splitting blasting for stress releasing and flexible 4-m-long bolt for roof supporting. Based on the new support scheme, field tests were performed. The results show that roadway support failure in traditional scenarios is caused by insufficient bolt length and extensive rotary subsidence of the long cantilever beam of the hard roof. In the new proposed scheme, flexible 4-m-long bolts are shown to effectively restrain the initial expansion deformation of the top coal. The deflection of the rock beam anchored by the roof foundation are improved. Deep-hole pre-splitting blasting effectively reduces the cantilever distance of the “block B” of the voussoir beam structure. The stress environment of the roadway surrounding rock is optimized and anchorage structure damage is inhibited. The results provide insights regarding the safe control of roadway roofs under extra-thick coal seam conditions.

scholarly journals Comprehensive technical support for safe mining in ultra-close coal seams: A case study

2021 ◽  
pp. 014459872110093
Author(s):  
Wei Zhang ◽  
Jiawei Guo ◽  
Kaidi Xie ◽  
Jinming Wang ◽  
Liang Chen ◽  
...  
Keyword(s):  
Coal Seam ◽  
Technical Support ◽  
Surrounding Rock ◽  
Coal Seams ◽  
Deformation Control ◽  
Hard Roof ◽  
Working Face ◽  
Close Coal Seams ◽  
Safe Mining

In order to mine the coal seam under super-thick hard roof, improve the utilization rate of resources and prolong the remaining service life of the mine, a case study of the Gaozhuang Coal Mine in the Zaozhuang Mining Area has been performed in this paper. Based on the specific mining geological conditions of ultra-close coal seams (#3up and #3low coal seams), their joint systematic analysis has been performed, with the focus made in the following three aspects: (i) prevention of rock burst under super-thick hard roof, (ii) deformation control of surrounding rock of roadways in the lower coal seam, and (iii) fire prevention in the goaf of working face. Given the strong bursting tendency observed in upper coal seam and lower coal seam, the technology of preventing rock burst under super-thick hard roof was proposed, which involved setting of narrow section coal pillars to protect roadways and interleaving layout of working faces. The specific supporting scheme of surrounding rock of roadways in the #3low1101 working face was determined, and the grouting reinforcement method of local fractured zones through Marithan was further proposed, to ensure the deformation control of surrounding rock of roadways in lower coal seams. The proposed fire prevention technology envisaged goaf grouting and spraying to plug leaks, which reduced the hazard of spontaneous combustion of residual coals in mined ultra-close coal seams. The technical and economic improvements with a direct economic benefit of 5.55 million yuan were achieved by the application of the proposed comprehensive technical support. The research results obtained provide a theoretical guidance and technical support of safe mining strategies of close coal seams in other mining areas.

Failure Analysis Case Study of a 1.5 Meter Space Flex Harness

2017 ◽  
Author(s):  
Erick Kim ◽  
Kamjou Mansour ◽  
Gil Garteiz ◽  
Javeck Verdugo ◽  
Ryan Ross ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Field Of View ◽  
Area Of Interest ◽  
Air Stream ◽  
Novel Method ◽  
Temperature Controlled ◽  
Non Destructive ◽  
Failure Site

Abstract This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

Failure Analysis of CDM-ESD Damage in a GaAs RFIC

2000 ◽  
Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Production Test ◽  
Analysis Techniques ◽  
Device Model ◽  
Charged Device ◽  
Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes

2018 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Tanya Schaeffer ◽  
Yuting Wei ◽  
Satish Kodali ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Scanning Capacitance Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.

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