Technical Note Optimization of inlet concentration profile for uniform deposition in a cylindrical chemical vapor deposition chamber

1999 ◽  
Vol 42 (6) ◽  
pp. 1141-1146 ◽  
Author(s):  
W.K. Cho ◽  
D.H. Choi ◽  
M.-u. Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Concentration Profile ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Technical Note ◽  
Inlet Concentration ◽  
Deposition Chamber ◽  
Uniform Deposition

C4F8O/O2/N-based Additive Gases for Silicon Nitride Plasma Enhanced Chemical Vapor Deposition Chamber Cleaning with Low Global Warming Potentials

2002 ◽  
Vol 41 (Part 1, No. 11A) ◽  
pp. 6570-6573 ◽  
Author(s):  
Ji Hwang Kim ◽  
Jeong Woon Bae ◽  
Chang Hyun Oh ◽  
Ki Joon Kim ◽  
Nae Eung Lee ◽  
...  
Keyword(s):  
Global Warming ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Chamber ◽  
Global Warming Potentials

Formation of Multilayer SiO2- SiOx Heterostructures by Control of Reaction Pathways in Remote PECVD

1989 ◽  
Vol 165 ◽  
Author(s):  
D. V. Tsu ◽  
S. S. Kim ◽  
J. A. Theil ◽  
Cheng Wang ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Charged Particles ◽  
Chemical Vapor ◽  
Reaction Pathways ◽  
Deposition Chamber ◽  
Process Gases

AbstractWe have deposited thin films of silicon dioxide, SiO2, and amorphous silicon, a- Si, by remote Plasma-Enhanced Chemical-Vapor Deposition (Remote PECVD), and have extended this process to the deposition of silicon suboxides, SiOx, 0<x<2. Heterostructures, comprised of alternating layers of SiO 2, and SiOx, x∼1, have been deposited by electronically controlling the flow of charged particles from the plasmageneration region into the deposition chamber, without interrupting the flow of process gases. We discuss the electrical properties of these heterojunction structures.

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