Interfacial void formation during vapor phase growth of 3C-SiC on Si(0 0 1) and Si(1 1 1) substrates. Characterization by transmission electron microscopy
1997 ◽
Vol 182
(3-4)
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pp. 379-388
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2004 ◽
Vol 260
(3-4)
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pp. 360-365
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Keyword(s):
2017 ◽
Vol 901
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pp. 3-7
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2006 ◽
Vol 78
(9)
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pp. 1651-1665
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1996 ◽
Vol 158
(1-2)
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pp. 28-36
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1991 ◽
Vol 107
(1-4)
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pp. 452-457
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