Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

2001 ◽  
Vol 45 (4) ◽  
pp. 541-549 ◽  
Author(s):  
D Flandre ◽  
S Adriaensen ◽  
A Akheyar ◽  
A Crahay ◽  
L Demeûs ◽  
...  
Keyword(s):  
High Temperature ◽  
Cmos Technology ◽  
Fully Depleted ◽  
Soi Cmos

Fully depleted SOI-CMOS technology for high temperature IC applications

1997 ◽  
Vol 46 (1-3) ◽  
pp. 1-7 ◽  
Author(s):  
B. Gentinne ◽  
J.-P. Eggermont ◽  
D. Flandre ◽  
J.-P. Colinge
Keyword(s):  
High Temperature ◽  
Cmos Technology ◽  
Fully Depleted ◽  
Soi Cmos

A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

2020 ◽  
pp. 1-18
Author(s):  
Florent Torres ◽  
Eric Kerhervé ◽  
Andreia Cathelin ◽  
Magali De Matos
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Technology Roadmap ◽  
Wide Range ◽  
28 Nm ◽  
Soi Cmos

Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology

2003 ◽  
Vol 24 (4) ◽  
pp. 251-253 ◽  
Author(s):  
Sang Lam ◽  
Hui Wan ◽  
Pin Su ◽  
P.W. Wyatt ◽  
C.L. Chen ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Fully Depleted ◽  
Gate Structure ◽  
Soi Cmos

Ultra-high temperature (>300°C) suspended thermodiode in SOI CMOS technology

2010 ◽  
Vol 41 (9) ◽  
pp. 540-546 ◽  
Author(s):  
S. Santra ◽  
F. Udrea ◽  
P.K. Guha ◽  
S.Z. Ali ◽  
I. Haneef
Keyword(s):  
High Temperature ◽  
Cmos Technology ◽  
Ultra High Temperature ◽  
Soi Cmos

High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000227-000232
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
A. Schmidt ◽  
W. Heiermann ◽  
H. Kappert ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Maximum Temperature ◽  
Cmos Process ◽  
Ring Oscillators ◽  
Circuit Function ◽  
Soi Cmos

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 °C. In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metalization with excellent reliability concerning electromigration, voltage independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were also characterized up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.

High temperature submicron SOI CMOS technology characterization for analog and digital applications up to 300°C

2017 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Sergey V. Lebedev ◽  
Lev M. Sambursky ◽  
Veniamin G. Stakhin ◽  
Igor A. Kharitonov ◽  
...  
Keyword(s):  
High Temperature ◽  
Cmos Technology ◽  
Soi Cmos
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