Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization

1999 ◽  
Vol 353 (1-2) ◽  
pp. 264-273 ◽  
Author(s):  
G.S. Chen ◽  
P.Y. Lee ◽  
S.T. Chen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Diffusion Barrier ◽  
Barrier Property ◽  
Formation Behavior ◽  
And Diffusion

The growth and diffusion barrier properties of atomic layer deposited NbNx thin films

2005 ◽  
Vol 491 (1-2) ◽  
pp. 235-241 ◽  
Author(s):  
Petra Alén ◽  
Mikko Ritala ◽  
Kai Arstila ◽  
Juhani Keinonen ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties ◽  
And Diffusion

Atomic scale analysis of phase formation and diffusion kinetics in Ag/Al multilayer thin films

2016 ◽  
Vol 120 (19) ◽  
pp. 195306 ◽  
Author(s):  
Hisham Aboulfadl ◽  
Isabella Gallino ◽  
Ralf Busch ◽  
Frank Mücklich
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Atomic Scale ◽  
Multilayer Thin Films ◽  
Scale Analysis ◽  
Diffusion Kinetics ◽  
And Diffusion

Cu Wettability and Diffusion Barrier Property of Ru Thin Film for Cu Metallization

2005 ◽  
Vol 152 (8) ◽  
pp. G594 ◽  
Author(s):  
Hoon Kim ◽  
Toshihiko Koseki ◽  
Takayuki Ohba ◽  
Tomohiro Ohta ◽  
Yasuhiko Kojima ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Barrier Property ◽  
Cu Metallization ◽  
And Diffusion

Diffusion Barrier Property of Sputtered Molybdenum Nitride Films for Dram Copper Metallization

1995 ◽  
Vol 403 ◽  
Author(s):  
Jong-Wan Park ◽  
Jeong-Youb Lee
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Barrier Property ◽  
Thin Layers ◽  
Intrinsic Stress ◽  
Copper Metallization ◽  
Molybdenum Nitride

AbstractDiffusion barrier property of sputtered molybdenum nitride films for DRAM copper metallization was investigated as a function of annealing temperature. Molybdenum nitride thin films on silicon remained stable upon annealing 650°C-30min, but h-MoSi2 and t-MoSi2 were formed after the heat treatment at 700°C and Mo5Si3 phase was formed at 850°C. Increasing the annealing temperature decreased the stress of the γ-Mo2N/Si film down to about 0.8×1010dyne/cm2 at 800°C due to the reduction of the intrinsic stress component. Copper films on silicon substrates separated by thin layers of molybdenum nitride remained stable during the heat treatment at 600°C, but they began to fail as a diffusion barrier after the heat treatment at 650°C, when molybdenum silicides and copper silicide were thought to be formed. On heating, Cu/γ-Mo2N/Si films were affected by thermal stress as due to the thermal expansion coefficient between copper and molybdenum nitride thin films. Furthermore, interlayer interactions between copper and silicon increased with increasing the annealing temperature. The interlayer reactions were investigated by Rutherford backscattering spectrometry, X-ray photoelectron spectrscopy and Nomarski microscopy.

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