Thin film interaction between low-k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer

AbstractHSQ (hydrogen silsesquioxane) is one of the promising low-k materials used in VLSI technology as an intra-metal dielectric to reduce capacitance-related issues. Like any other dielectrics, the integration of HSQ in multilevel interconnect schemes has been of considerable importance. In this study, the compatibility of HSQ with different nitride barrier layers, such as PVD and CVD TiN, PVD TaN, and CVD W2N, has been investigated by using a variety of techniques. The refractory metal barriers, Ti and Ta, are also included for a comparison. The degradation of HSQ films indicates a strong underlying barrier layer dependence. With CVD nitrides or refractory metals as barrier, HSQ exhibits a better structural and property stability than that with PVD nitrides. The possible mechanisms have been discussed to account for these observations.

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Materials Issues with Thin Film Hydrogen Silsesquioxane Low K Dielectrics

Journal of The Electrochemical Society ◽

10.1149/1.1838907 ◽

1998 ◽

Vol 145 (11) ◽

pp. 4019-4025 ◽

Cited By ~ 93

Author(s):

M. Grant Albrecht ◽

Craig Blanchette

Keyword(s):

Thin Film ◽

Hydrogen Silsesquioxane ◽

Low K

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The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

MRS Proceedings ◽

10.1557/proc-766-e8.10 ◽

2003 ◽

Vol 766 ◽

Cited By ~ 7

Author(s):

Jin-Heong Yim ◽

Jung-Bae Kim ◽

Hyun-Dam Jeong ◽

Yi-Yeoul Lyu ◽

Sang Kook Mah ◽

...

Keyword(s):

Thin Film ◽

Mechanical Properties ◽

Dielectric Constant ◽

Pore Structure ◽

Pore Diameter ◽

Dielectric Films ◽

Low Dielectric Constant ◽

Cyclodextrin Derivatives ◽

Low Dielectric ◽

Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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Effects of Hydrogen on Electrical and Chemical Properties of Low-k Hydrogen Silsesquioxane as an Intermetal Dielectric for Nonetchback Processes

Electrochemical and Solid-State Letters ◽

10.1149/1.1390847 ◽

1999 ◽

Vol 2 (8) ◽

pp. 390 ◽

Cited By ~ 14

Author(s):

T. C. Chang

Keyword(s):

Chemical Properties ◽

Hydrogen Silsesquioxane ◽

Intermetal Dielectric ◽

Low K ◽

And Chemical Properties

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Thermally annealed iron thin film on an alumina barrier layer by ToF-SIMS

Surface Science Spectra ◽

10.1116/1.4931977 ◽

2015 ◽

Vol 22 (2) ◽

pp. 22-28 ◽

Cited By ~ 1

Author(s):

Supriya S. Kanyal ◽

David S. Jensen ◽

Zihua Zhu ◽

Matthew R. Linford

Keyword(s):

Thin Film ◽

Barrier Layer ◽

Tof Sims

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Influence of ZnSnO x barrier layer on the texturing of ZnO:Al layers for light management in flexible thin-film silicon solar cells

physica status solidi (a) ◽

10.1002/pssa.201600884 ◽

2017 ◽

Vol 214 (8) ◽

pp. 1600884 ◽

Cited By ~ 2

Author(s):

Karen Wilken ◽

Friedhelm Finger ◽

Vladimir Smirnov

Keyword(s):

Thin Film ◽

Solar Cells ◽

Barrier Layer ◽

Silicon Solar Cells ◽

Thin Film Silicon ◽

Light Management

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Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment

Journal of The Electrochemical Society ◽

10.1149/1.1393334 ◽

2000 ◽

Vol 147 (3) ◽

pp. 1186 ◽

Cited By ~ 21

Author(s):

Po-Tsun Liu ◽

Ting-Chang Chang ◽

Ya-Liang Yang ◽

Yi-Fang Cheng ◽

Jae-Kyun Lee ◽

...

Keyword(s):

Electrical Properties ◽

Plasma Treatment ◽

Copper Interconnects ◽

Deuterium Plasma ◽

Hydrogen Silsesquioxane ◽

Low K

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Changes of UV Optical Properties of Plasma Damaged Low-k Dielectrics for Sidewall Damage Scatterometry

MRS Proceedings ◽

10.1557/proc-1079-n07-04 ◽

2008 ◽

Vol 1079 ◽

Cited By ~ 4

Author(s):

Premysl Marsik ◽

Adam Urbanowicz ◽

Klara Vinokur ◽

Yoel Cohen ◽

Mikhail R Baklanov

Keyword(s):

Thin Film ◽

Optical Properties ◽

Optical Model ◽

Concentration Profiles ◽

Atomic Concentration ◽

Plasma Damage ◽

Tof Sims ◽

Plasma Treatments ◽

Water Based ◽

Low K

ABSTRACTPorous low-k dielectrics were studied to determine the changes of optical properties after various plasma treatments for development of scatterometry technique for evaluation of the trench/via sidewall plasma damage. The SiCOH porogen based low-k films were prepared by PE-CVD. The deposited and UV-cured low-k films have been damaged by striping O2Cl2, O2, NH3 and H2N2 based plasmas and CF4/CH2F2/Ar etching plasma. Blanket wafers were studied in this work for the simplicity of thin film optical model. The optical properties of the damaged low-k dielectrics are evaluated the using various angle spectroscopic ellipsometry in range from 2 to 9 eV. Multilayer optical model is applied to fit the measured quantities and the validity is supported by other techniques. The atomic concentration profiles of Si, C, O and H were stated by TOF-SIMS and changes in overall chemical composition were derived from FTIR. Toluene and water based ellipsometric porosimetry is involved to examine the porosity, pore interconnectivity and internal hydrophilicity.

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