The Integration of Low-k Dielectric Material Hydrogen Silsesquioxane (HSQ) with Nitride Thin Films as Barriers

2000 ◽  
Vol 612 ◽  
Author(s):  
Yuxiao Zeng ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Thin Films ◽  
Barrier Layer ◽  
Refractory Metal ◽  
Dielectric Material ◽  
Considerable Importance ◽  
Hydrogen Silsesquioxane ◽  
Barrier Layers ◽  
Vlsi Technology ◽  
Materials Used ◽  
Low K

AbstractHSQ (hydrogen silsesquioxane) is one of the promising low-k materials used in VLSI technology as an intra-metal dielectric to reduce capacitance-related issues. Like any other dielectrics, the integration of HSQ in multilevel interconnect schemes has been of considerable importance. In this study, the compatibility of HSQ with different nitride barrier layers, such as PVD and CVD TiN, PVD TaN, and CVD W2N, has been investigated by using a variety of techniques. The refractory metal barriers, Ti and Ta, are also included for a comparison. The degradation of HSQ films indicates a strong underlying barrier layer dependence. With CVD nitrides or refractory metals as barrier, HSQ exhibits a better structural and property stability than that with PVD nitrides. The possible mechanisms have been discussed to account for these observations.

Interfacial Adhesion Study of Porous Low-K Dielectrics to CVD Barrier Layers

2002 ◽  
Vol 716 ◽  
Author(s):  
Jeffrey A. Lee ◽  
Jeffrey T. Wetzel ◽  
Caroline Merrill ◽  
Paul S. Ho
Keyword(s):  
Mechanical Properties ◽  
Fracture Energy ◽  
Barrier Layer ◽  
Dielectric Material ◽  
Measurement Data ◽  
Dielectric Materials ◽  
Cohesive Failure ◽  
University Of Texas ◽  
Barrier Layers ◽  
Low K

AbstractThe present paper discusses the four-point bending technique employed at The University of Texas at Austin (UT Austin) to characterize adhesion strength of ultra low-k dielectric materials to CVD barrier layers. Adhesion energy between an ultra low-k dielectric material and a barrier layer was measured as a function of porosity (2.0 < k < 2.3). It was found that the fracture energy decreases with the dielectric constant, which correlates with mechanical properties such as Young's modulus and hardness. Adhesion measurement data was also obtained for different lowk / barrier layer interfaces. The independence of interfacial fracture energy on the type of interface suggests that cohesive failure occurs in the low-k material layer and not at the interface. In addition, the very low fracture energies (G < 3 J/2) confirm the weak mechanical properties of such highly porous materials. Experimental results are illustrated with analysis of failure surfaces using Auger Electron Spectroscopy and Scanning Electron Microscopy.

The Effects of Processing on the Microstructure of Copper Thin Films on Tantalum Barrier Layers

1995 ◽  
Vol 391 ◽  
Author(s):  
E.M. Zielinski ◽  
R.P. Vinci ◽  
J.C. Bravman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Barrier Layer ◽  
Crystallographic Orientation ◽  
Deposition Temperature ◽  
Volume Fraction ◽  
Fiber Texture ◽  
Cu Films ◽  
Barrier Layers ◽  
Two Temperatures

abstractPreferred crystallographic orientation and grain size distribution were characterized as a function of processing for sputtered Cu films on Ta underlayers. The Ta barrier layer was deposited at two temperatures, 30 and 100 °C. Cu was deposited at 30, 150 and 250 °C on the 30 °C Ta, and at 100, 150, 200 and 250 °C on the 100 °C Ta. In the first set of samples, with increasing deposition temperature, the Cu (111) fiber texture grew weaker and the volume fraction of randomly oriented grains increased from 0.23 to 0.74. In contrast, for the films deposited on the 100 °C Ta, with increasing deposition temperature, Cu (111) fiber texture strengthened and the fractions of randomly oriented and twinned grains decreased. Grain size was lognormally distributed in all samples and varied approximately parabolically with deposition temperature. At a given deposition temperature, median grain size in the Cu was larger in the films deposited on the 100 °C Ta. These results will be related to the microstructure of the Ta underlayers. Cu microstructure on the 100 °C Ta is shown to be influenced by textural inheritance from the Ta underlayer. Microstructure of the Cu on 30 °C Ta is discussed in terms of trace contaminants.

Determination of the hardness and elastic modulus of low-k thin films and their barrier layer for microelectronic applications

2003 ◽  
Vol 70 (1) ◽  
pp. 115-124 ◽  
Author(s):  
Lu Shen ◽  
Kaiyang Zeng ◽  
Yihua Wang ◽  
Babu Narayanan ◽  
Rakesh Kumar
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Barrier Layer ◽  
Low K

Thin film interaction between low-k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer

2000 ◽  
Vol 360 (1-2) ◽  
pp. 283-292 ◽  
Author(s):  
Yuxiao Zeng ◽  
Stephen W. Russell ◽  
Andrew J. McKerrow ◽  
Peijun Chen ◽  
T.L. Alford
Keyword(s):  
Thin Film ◽  
Barrier Layer ◽  
Hydrogen Silsesquioxane ◽  
Low K

Solution-Derived Yba2Cu,Sub3O7−Δ. Thin Films And Barrier Layers

1990 ◽  
Vol 180 ◽  
Author(s):  
G. E. Whitwell ◽  
J. H. Wandass ◽  
F. M. Cambria ◽  
M. F. Antezzo
Keyword(s):  
Thin Films ◽  
Barrier Layer ◽  
Thermal Processing ◽  
Alkaline Earth ◽  
Depth Profiling ◽  
Metal Alkoxide ◽  
Barrier Layers ◽  
Resistivity Measurements ◽  
Si Substrates ◽  
Zero Resistance

ABSTRACTHydrolyzed metal alkoxide solutions were spin-coated on Si substrates with subsequent thermal processing. Barrier layers of alkaline earth oxides, perovskites, Y2O3, ZrO2 and others were produced. Characterization was performed via SEM, XRD, ESCA, Auger depth profiling and resistivity measurements. Barrier layer films were fairly smooth with some cracking and pitting present. Si migration was severe for alkaline earth thin films on Si wafers. Some perovskite films on Si showed formation of Ba-Si-O phases at the Si interface. Thin films of 1–2–3 on barrier layers of SrTiO3 or ZrO2 on Si showed Ba pileup at the Si interface and were not superconducting. 1–2–3 layers deposited on single crystal ZrO2 were superconducting and showed onset temperatures of 90 K with zero resistance reached at about 55 K.

Interface Stability of Metal Barrier and low K Dielectrics

2007 ◽  
Vol 990 ◽  
Author(s):  
Toh-Ming Lu ◽  
Y. Ou ◽  
P.-I. Wang
Keyword(s):  
Metal Ions ◽  
Refractory Metal ◽  
Dielectric Material ◽  
Dielectric Materials ◽  
Processing Temperature ◽  
Electrical Stress ◽  
Bias Temperature Stress ◽  
Electric Filed ◽  
Low K ◽  
Metal Barrier

ABSTRACTIt is known that the interface between a refractory metal barrier and a dielectric material is stable against thermal treatment at a conventional IC interconnect processing temperature. However, the interface may not be stable against thermal and electrical stress called the bias temperature stress (BTS) at moderate conditions of 150 °C and 0.5 MV/cm. Massive refractory metal ions are seen to drift into low K dielectric materials that contain a mixture of organic and inorganic elements. It is argued that the oxidation of the metal at the interface creates unstable metal ions that are ready to drift into the dielectric film under an electric filed during the BTS test. Dielectric or dielectric capping materials that do not contain oxygen can prevent metal oxidation and are desirable to create a stable metal and dielectric interface.

The Correlation of Adhesion Strength with Barrier Structure in Cu Metallization

2003 ◽  
Vol 766 ◽  
Author(s):  
A. Sekiguchi ◽  
J. Koike ◽  
K. Ueoka ◽  
J. Ye ◽  
H. Okamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Nitrogen Concentration ◽  
Scratch Test ◽  
Barrier Structure ◽  
Barrier Layers ◽  
Cu Metallization ◽  
Microstructure Observation ◽  
Sputter Deposited ◽  
Sulfur Containing

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Monomer methylmethacrylate (MMA) incorporated hybrid low-k thin films

2013 ◽  
Vol 9 (6) ◽  
pp. 723-728 ◽  
Author(s):  
Bhavana N. Joshi ◽  
A. M. Mahajan
Keyword(s):  
Thin Films ◽  
Low K

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

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