3809. Electron microscopy of in-situ ion beam sputtered amorphous Gd-Fe alloy thin films. (USA)

Vacuum ◽  
1979 ◽  
Vol 29 (1) ◽  
pp. 37
1985 ◽  
Vol 62 ◽  
Author(s):  
A. B. Harker ◽  
D. G. Howitt ◽  
P. J. Hood ◽  
P. Kobrin

ABSTRACTThe reactive ion beam deposition of ceramic films onto unheated substrates can produce amorphous films with essentially molecular mixing. The annealing and hot isotatic pressing (hipping) of these films to produce crystalline phases have reproducable effects which are sensitive to the temperature and the density of the film. Experiments with titanium oxides indicate that it is principally the equilibrium phases that are formed and that hipping can be used to encourage the same transformations at lower temperatures.Thin films of titanium oxide close to the stoichiometry of TiO2 were deposited onto unheated substrates of sodium chloride. Some of the films were removed from the substrate by floating them off in water and the remainder were either annealed or hipped to induce crystallization. The anneals were performed either in air or argon and the hipping was done under an argon pressure of about twenty thousand pounds per square inch. Several of the free standing films were annealed in the same atmospheres on nickel grids. All the specimens were prepared for transmission electron microscopy by the same floating technique and were examined in a Philips 400 T.E.M. at 125 keV. The as deposited films were amorphous and showed no visible texture other than that derived from a small amount of porosity. The films were sufficiently conductive that they could be examined directly in the T.E.M. without carbon coating provided they were supported on a grid of fairly fine mesh. One specimen was also examined in the Kratos 1.5 MeV high voltage electron microscope at the National Center for Electron Microscopy. The specimen was annealed in vacuum using an in-situ hot stage to directly observe the behavior of the film.The post deposition annealing and hipping of these films reproducibly induced the crystallization of anatase below 800°C. This is the equilibrium phase [1] and the extent to which the films transformed and the morphology of the growing crystallites were determined principally by the film thickness. There was little difference between the responses of free standing films and films left on the salt substrate. They tended to transform at about the same temperature, which was reproduced in the in-situ hot stage experiment and the microsructures which formed were very similar. The dependence upon thickness was also reflected in all the microstructures of the different post deposition treatments and it was possible to complete the transformations that were very sluggish in some of the films by hipping them at the same temperatures.


Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).


Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1431
Author(s):  
Seiichiro Ii ◽  
Takero Enami ◽  
Takahito Ohmura ◽  
Sadahiro Tsurekawa

Transmission electron microscopy in situ straining experiments of Al single crystals with different initial lattice defect densities have been performed. The as-focused ion beam (FIB)-processed pillar sample contained a high density of prismatic dislocation loops with the <111> Burgers vector, while the post-annealed specimen had an almost defect-free microstructure. In both specimens, plastic deformation occurred with repetitive stress drops (∆σ). The stress drops were accompanied by certain dislocation motions, suggesting the dislocation avalanche phenomenon. ∆σ for the as-FIB Al pillar sample was smaller than that for the post-annealed Al sample. This can be considered to be because of the interaction of gliding dislocations with immobile prismatic dislocation loops introduced by the FIB. The reloading process after stress reduction was dominated by elastic behavior because the slope of the load–displacement curve for reloading was close to the Young’s modulus of Al. Microplasticity was observed during the load-recovery process, suggesting that microyielding and a dislocation avalanche repeatedly occurred, leading to intermittent plasticity as an elementary step of macroplastic deformation.


2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.


1989 ◽  
Vol 43 (1-4) ◽  
pp. 393-397 ◽  
Author(s):  
J.H. James ◽  
B.J. Kellett ◽  
A. Gauzzi ◽  
B. Dwir ◽  
D. Pavuna
Keyword(s):  

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
J. Narayan

ABSTRACTWe have prepared high-quality superconducting YBa2Cu3O7−δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excitner laser ( λ = 248 nm ) at substrate temperature of 650°C. Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with <100> TiN // <100> Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90–92K with Tco (zero resistance temperature) of ∼84K. We have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed indetail.


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