High-field electrical conduction in thin-film sandwich structures of the metal/organic semiconductor/metal type

1998 ◽  
Vol 126 (3-4) ◽  
pp. 246-254 ◽  
Author(s):  
Mihaela Rusu ◽  
G.I. Rusu
Keyword(s):  
Thin Film ◽  
Electrical Conduction ◽  
Organic Semiconductor ◽  
High Field ◽  
Sandwich Structures ◽  
Metal Type ◽  
Metal Organic

Effect of the Interface Mixing Layer on the Thermal Boundary Conductance of Metal-Organic Semiconductor Thin Film–Numerical Study by Lattice Boltzmann Method

2014 ◽  
Author(s):  
Xinyu Wang ◽  
Paddy K. L. Chan
Keyword(s):  
Thin Film ◽  
Lattice Boltzmann Method ◽  
Organic Semiconductor ◽  
Lattice Boltzmann ◽  
Interfacial Bonding ◽  
Spring Constant ◽  
Thermal Boundary Conductance ◽  
Metal Organic ◽  
Boltzmann Method ◽  
Interface Mixing

The interface mixing of metal-organic semiconductor layers plays a remarkable role in thermal transport in organic electronic devices. Here we apply the lattice Boltzmann method (LBM) to simulate the effect of the interface mixing on thermal boundary conductance (TBC) of Ag-pentacene and Ag-CuPc thin films. The spring constant-dependent transmission coefficient is considered in the simulation to investigate the effect of the interfacial bonding on TBC. The simulation result is compared with the experimental result of Ag-CuPc thin film obtained by other research group. By varying the thickness and composition of the intermixing layer, a significant variation of the thermal boundary conductance of the thin film is observed. The total thermal boundary conductance will increase with the spring constant per area. The increase of the thickness of the intermixing layer leads to the downward trend of the total thermal boundary conductance and it is attributed to the enhancement of the intrinsic thermal resistance of the intermixing layer. These findings suggest the interfacial bonding, thickness and composition of the metal-organic intermixing layer should be carefully controlled to achieve the desired thermal boundary conductance.

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Electrical Conduction in Thin Film Carbons.

1987 ◽  
Author(s):  
K. Sugihara ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Film ◽  
Electrical Conduction

scholarly journals High field breakdown characteristics of carbon nanotube thin film transistors

2013 ◽  
Vol 24 (40) ◽  
pp. 405204 ◽  
Author(s):  
Man Prakash Gupta ◽  
Ashkan Behnam ◽  
Feifei Lian ◽  
David Estrada ◽  
Eric Pop ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
High Field

A thin film of naphthalenediimide-based metal-organic framework with electrochromic properties

2021 ◽  
Vol 594 ◽  
pp. 73-79
Author(s):  
Xianfeng Wu ◽  
Kai Wang ◽  
Junyu Lin ◽  
Dan Yan ◽  
Zhiyong Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Organic Framework ◽  
Electrochromic Properties ◽  
Metal Organic ◽  
Organic Framework
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