A Study on microstructure and service property of Ni3Al base alloy irradiated by intense pulsed ion beams

2002 ◽  
Vol 158-159 ◽  
pp. 482-487 ◽  
Author(s):  
B.X Han ◽  
H.T Zhang ◽  
W.J Zhao ◽  
S Yan ◽  
X.Y Le ◽  
...  
Keyword(s):  
Service Property ◽  
Base Alloy ◽  
Ion Beams

Axial Observation of X-Ray Spectra from a Beam-Foil Source

1988 ◽  
Vol 102 ◽  
pp. 339-342
Author(s):  
J.M. Laming ◽  
J.D. Silver ◽  
R. Barnsley ◽  
J. Dunn ◽  
K.D. Evans ◽  
...  
Keyword(s):  
Spectral Resolution ◽  
Heavy Ion ◽  
Ion Beams ◽  
Beam Axis ◽  
Doppler Broadening ◽  
X Ray ◽  
Beam Foil

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

Control of Metal Alloy Oxidation with Electric Fields

1973 ◽  
Vol 31 ◽  
pp. 164-165
Author(s):  
R. R. Dils ◽  
P. S. Follansbee
Keyword(s):  
Electric Fields ◽  
Oxidation Process ◽  
Base Alloy ◽  
Oxide Surface ◽  
Platinum Electrodes ◽  
Insulating Layer ◽  
Iron Base Alloy ◽  
Alloy Oxidation ◽  
Aluminum Oxide Layer ◽  
And Control

Electric fields have been applied across oxides growing on a high temperature alloy and control of the oxidation of the material has been demonstrated. At present, three-fold increases in the oxidation rate have been measured in accelerating fields and the oxidation process has been completely stopped in a retarding field.The experiments have been conducted with an iron-base alloy, Pe 25Cr 5A1 0.1Y, although, in principle, any alloy capable of forming an adherent aluminum oxide layer during oxidation can be used. A specimen is polished and oxidized to produce a thin, uniform insulating layer on one surface. Three platinum electrodes are sputtered on the oxide surface and the specimen is reoxidized.

Suppression of γ’ Precipitation in a Laser-Melted Nickel-Base Alloy

1977 ◽  
Vol 35 ◽  
pp. 270-271
Author(s):  
J. M. Walsh ◽  
J. C. Whittles ◽  
B. H. Kear ◽  
E. M. Breinan
Keyword(s):  
Cooling Rate ◽  
Base Alloy ◽  
Material Surface ◽  
Intimate Contact ◽  
Absorbed Power ◽  
Perfect Contact ◽  
Nickel Base ◽  
Rapidly Solidified ◽  
Limiting Case ◽  
The Heat Transfer Coefficient

Conventionally cast γ’ precipitation hardened nickel-base superalloys possess well-defined dendritic structures and normally exhibit pronounced segregation. Splat quenched, or rapidly solidified alloys, on the other hand, show little or no evidence for phase decomposition and markedly reduced segregation. In what follows, it is shown that comparable results have been obtained in superalloys processed by the LASERGLAZE™ method.In laser glazing, a sharply focused laser beam is traversed across the material surface at a rate that induces surface localized melting, while avoiding significant surface vaporization. Under these conditions, computations of the average cooling rate can be made with confidence, since intimate contact between the melt and the self-substrate ensures that the heat transfer coefficient is reproducibly constant (h=∞ for perfect contact) in contrast to the variable h characteristic of splat quenching. Results of such computations for pure nickel are presented in Fig. 1, which shows that there is a maximum cooling rate for a given absorbed power density, corresponding to the limiting case in which melt depth approaches zero.

The Nature of Delta Phase Precipitation in Inconel 718

1982 ◽  
Vol 40 ◽  
pp. 724-725
Author(s):  
L. S. Lin ◽  
C. C. Law
Keyword(s):  
Inconel 718 ◽  
Base Alloy ◽  
High Strength ◽  
Physical Metallurgy ◽  
Nickel Base Alloy ◽  
Phase Precipitation ◽  
Weight Percentage ◽  
Delta Phase ◽  
The Subject ◽  
Nickel Base

Inconel 718, a precipitation hardenable nickel-base alloy, is a versatile high strength, weldable wrought alloy that is used in the gas turbine industry for components operated at temperatures up to about 1300°F. The nominal chemical composition is 0.6A1-0.9Ti-19.OCr-18.0Fe-3Mo-5.2(Cb + Ta)- 0.1C with the balance Ni (in weight percentage). The physical metallurgy of IN 718 has been the subject of a number of investigations and it is now established that hardening is due, primarily, to the formation of metastable, disc-shaped γ" an ordered body-centered tetragonal structure (DO2 2 type superlattice).

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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