Reactor design for chemical vapor deposition of tungsten carbide coatings

The article provides an overview of the scientific and technical literature in the field of the formation of silicon carbide coatings by chemical vapor deposition (CVD). CVD is a complex process, approaches to which vary depending on the tasks being solved. Depending on the technological parameters, the initial reagents, the substrate for deposition, the type and design of the CVD reactors, it is possible to achieve both the deposition of pure silicon carbide and the co-deposition of silicon and/or carbon. In the first part of the article, attention is paid to the study of CVD from the point of view of the mechanisms of chemical reactions, the design of the deposition apparatus, the substrates for deposition.

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Microstructure and Mechanical Properties of Annealed WC/C PECVD Coatings Deposited Using Hexacarbonyl of W with Different Gases

Materials ◽

10.3390/ma13163576 ◽

2020 ◽

Vol 13 (16) ◽

pp. 3576 ◽

Cited By ~ 1

Author(s):

Peter Horňák ◽

Daniel Kottfer ◽

Karol Kyzioł ◽

Marianna Trebuňová ◽

Janka Majerníková ◽

...

Keyword(s):

Mechanical Properties ◽

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Coefficient Of Friction ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Mechanical And Tribological Properties ◽

Annealing Temperatures ◽

Different Gases

The present work studies the tungsten carbide (WC/C) coatings deposited by using Plasma Enhanced Chemical Vapor Deposition (PECVD), with and without gases of Ar and N2. Volatile hexacarbonyl of W was used as a precursor. Their mechanical and tribological properties were evaluated. The following values were obtained by using deposition process with N2 of HIT = 19.7 ± 4.1 GPa, EIT = 221 ± 2.1 GPa, and coefficient of friction (COF) = 0.35 ± 0.09. Secondly, deposition without the aforementioned gas obtained values of HIT = 20.9 ± 2 GPa, EIT = 292 ± 20 GPa, and COF = 0.69 ± 0.05. WC/C coatings were annealed at temperatures of 200, 500, and 800 °C, respectively. Evaluated factors include the introduced properties, the observed morphology, and the structural composition of WC/C coatings. The process of degradation was carried out by using various velocities, depending on used gases and annealing temperatures.

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Precursors for Organometallic Chemical Vapor Deposition of Tungsten Carbide Films

Chemistry of Materials ◽

10.1021/cm00060a016 ◽

1995 ◽

Vol 7 (12) ◽

pp. 2284-2292 ◽

Cited By ~ 19

Author(s):

Ken K. Lai ◽

H. Henry Lamb

Keyword(s):

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organometallic Chemical Vapor Deposition

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Single-phase tungsten carbide nanopillar arrays prepared by chemical vapor deposition

RSC Advances ◽

10.1039/c2ra21246c ◽

2012 ◽

Vol 2 (19) ◽

pp. 7403 ◽

Cited By ~ 9

Author(s):

Feng Teng ◽

Jiangtao Wang ◽

Xiuyun An ◽

Bingan Lu ◽

Yurong Su ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Vapor Deposition ◽

Single Phase ◽

Chemical Vapor ◽

Nanopillar Arrays

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Control of stoichiometry, microstructure, and mechanical properties in SiC coatings produced by fluidized bed chemical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.2008.0220 ◽

2008 ◽

Vol 23 (6) ◽

pp. 1785-1796 ◽

Cited By ~ 44

Author(s):

E. López-Honorato ◽

P.J. Meadows ◽

J. Tan ◽

P. Xiao

Keyword(s):

Mechanical Properties ◽

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Young’S Modulus ◽

Fluidized Bed ◽

Vapor Deposition ◽

Young's Modulus ◽

Chemical Vapor ◽

Carbide Coatings ◽

Fuel Particles

Stoichiometric silicon carbide coatings the same as those used in the formation of TRISO (TRistructural ISOtropic) fuel particles were produced by the decomposition of methyltrichlorosilane in hydrogen. Fluidized bed chemical vapor deposition at around 1500 °C, produced SiC with a Young’s modulus of 362 to 399 GPa. In this paper we demonstrate the deposition of stoichiometric silicon carbide coatings with refined microstructure (grain size between 0.4 and 0.8 μm) and enhanced mechanical properties (Young’s modulus of 448 GPa and hardness of 42 GPa) at 1300 °C by the addition of propene. The addition of ethyne, however, had little effect on the deposition of silicon carbide. The effect of deposition temperature and precursor concentration were correlated to changes in the type of molecules participating in the deposition mechanism.

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