Single-phase tungsten carbide nanopillar arrays prepared by chemical vapor deposition

RSC Advances ◽  
2012 ◽  
Vol 2 (19) ◽  
pp. 7403 ◽  
Author(s):  
Feng Teng ◽  
Jiangtao Wang ◽  
Xiuyun An ◽  
Bingan Lu ◽  
Yurong Su ◽  
...  
2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.


2006 ◽  
Vol 89 (19) ◽  
pp. 193105 ◽  
Author(s):  
L. Hong ◽  
Z. Liu ◽  
X. T. Zhang ◽  
S. K. Hark

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6236-6242 ◽  
Author(s):  
Y. Arata ◽  
H. Nishinaka ◽  
D. Tahara ◽  
M. Yoshimoto

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.


Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3576 ◽  
Author(s):  
Peter Horňák ◽  
Daniel Kottfer ◽  
Karol Kyzioł ◽  
Marianna Trebuňová ◽  
Janka Majerníková ◽  
...  

The present work studies the tungsten carbide (WC/C) coatings deposited by using Plasma Enhanced Chemical Vapor Deposition (PECVD), with and without gases of Ar and N2. Volatile hexacarbonyl of W was used as a precursor. Their mechanical and tribological properties were evaluated. The following values were obtained by using deposition process with N2 of HIT = 19.7 ± 4.1 GPa, EIT = 221 ± 2.1 GPa, and coefficient of friction (COF) = 0.35 ± 0.09. Secondly, deposition without the aforementioned gas obtained values of HIT = 20.9 ± 2 GPa, EIT = 292 ± 20 GPa, and COF = 0.69 ± 0.05. WC/C coatings were annealed at temperatures of 200, 500, and 800 °C, respectively. Evaluated factors include the introduced properties, the observed morphology, and the structural composition of WC/C coatings. The process of degradation was carried out by using various velocities, depending on used gases and annealing temperatures.


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