Relationship between coercivity and deposition conditions of Ba ferrite films prepared by facing targets sputtering apparatus

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.

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Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽

10.3390/ma14040724 ◽

2021 ◽

Vol 14 (4) ◽

pp. 724

Author(s):

Tong Li ◽

Masaya Ichimura

Keyword(s):

Thin Films ◽

Aqueous Solution ◽

Optical Properties ◽

Surface Morphology ◽

Magnesium Hydroxide ◽

Dry Deposition ◽

Visible Range ◽

Substrate Heating ◽

Water Effects ◽

Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

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Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Nanomaterials ◽

10.3390/nano11071692 ◽

2021 ◽

Vol 11 (7) ◽

pp. 1692

Author(s):

Emmanuel K. Ampadu ◽

Jungdong Kim ◽

Eunsoon Oh

Keyword(s):

High Performance ◽

Room Temperature ◽

Photovoltaic Device ◽

Photovoltaic Devices ◽

Temperature Spectrum ◽

Terahertz Region ◽

Room Temperature Spectrum ◽

Ftir Spectrometer ◽

Titanium Substrates ◽

Deposition Conditions

We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.

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Fabrication and Growth Control of Metal Nanostructures through Exploration of Atomic Force Microscopy-Based Patterning and Electroless Deposition Conditions

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.0c08017 ◽

2020 ◽

Vol 124 (46) ◽

pp. 25588-25601

Author(s):

Christina M. Edwards ◽

Sasanka B. Ulapane ◽

Nilan J. B. Kamathewatta ◽

Hannah M. Ashberry ◽

Cindy L. Berrie

Keyword(s):

Atomic Force Microscopy ◽

Electroless Deposition ◽

Growth Control ◽

Metal Nanostructures ◽

Force Microscopy ◽

Atomic Force ◽

Deposition Conditions

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Interaction-tailored organization of large-area colloidal assemblies

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.9.150 ◽

2018 ◽

Vol 9 ◽

pp. 1582-1593 ◽

Cited By ~ 4

Author(s):

Silvia Rizzato ◽

Elisabetta Primiceri ◽

Anna Grazia Monteduro ◽

Adriano Colombelli ◽

Angelo Leo ◽

...

Keyword(s):

Film Formation ◽

Low Cost ◽

Interparticle Distance ◽

Particle Interactions ◽

Polystyrene Spheres ◽

Large Area ◽

Nanoscale Patterning ◽

Particle Solution ◽

Number Of Particles ◽

Deposition Conditions

Colloidal lithography is an innovative fabrication technique employing spherical, nanoscale crystals as a lithographic mask for the low cost realization of nanoscale patterning. The features of the resulting nanostructures are related to the particle size, deposition conditions and interactions involved. In this work, we studied the absorption of polystyrene spheres onto a substrate and discuss the effect of particle–substrate and particle–particle interactions on their organization. Depending on the nature and the strength of the interactions acting in the colloidal film formation, two different strategies were developed in order to control the number of particles on the surface and the interparticle distance, namely changing the salt concentration and absorption time in the particle solution. These approaches enabled the realization of large area (≈cm2) patterning of nanoscale holes (nanoholes) and nanoscale disks (nanodisks) of different sizes and materials.

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Electronic Transport Properties of a-Si:H,F/a-Si,Ge:H,F Superlattices

MRS Proceedings ◽

10.1557/proc-95-369 ◽

1987 ◽

Vol 95 ◽

Cited By ~ 2

Author(s):

J. P. Conde ◽

S. Aljishi ◽

D. S. Shen ◽

V. Chu ◽

Z E. Smith ◽

...

Keyword(s):

Barrier Layer ◽

Electronic Transport ◽

Thermal Emission ◽

Parallel Transport ◽

Dark Conductivity ◽

Alloy Layer ◽

Conductivity Activation Energy ◽

Superlattice Structures ◽

Deposition Conditions ◽

Extract Information

AbstractWe study the dark conductivity σd, dark conductivity activation energy Ea and photoconductivity σph of a-Si:H,F/a-Si,Ge:H,F superlattices both perpendicular and parallel to the plane of the layers. In parallel transport, both the σph and σd are dominated by the alloy layer characteristics with the superposition of carrier confinement quantum effects. In perpendicular transport, the σd shows an interplay of quantum mechanical tunneling through the barriers and of classical thermal emission over the barrier layer and the σph is controlled by the decreasing absorption by the silicon barrier layer as the optical gap Eopt of the structure decreases.We also found that the multilayer structure allows to grow lower gap a-Si,Ge:H,F alloys than achievable under the same deposition conditions for bulk materials. This stabilizing effect allowed us to study low-gap superlattice structures and extract information about these very low gap (<1.2 eV) a- Si,Ge:H,F alloys.

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