Surface and interface stress effects on interfacial and nanostructured materials

1997 ◽  
Vol 237 (2) ◽  
pp. 180-184 ◽  
Author(s):  
R.C. Cammarata
Keyword(s):  
Nanostructured Materials ◽  
Interface Stress ◽  
Surface And Interface ◽  
Stress Effects

scholarly journals Nanoparticles and the influence of interface elasticity

2008 ◽  
Vol 35 (1-3) ◽  
pp. 267-286 ◽  
Author(s):  
Mi Changwen ◽  
Demitris Kouris
Keyword(s):  
Material Properties ◽  
Axial Symmetry ◽  
Outer Boundary ◽  
Elastic Field ◽  
Interface Stress ◽  
Axially Symmetric ◽  
Displacement Potential ◽  
Surface And Interface ◽  
Stress Effects ◽  
Interface Elasticity

In this manuscript, we discuss the influence of surface and interface stress on the elastic field of a nanoparticle, embedded in a finite spherical substrate. We consider an axially symmetric traction field acting along the outer boundary of the substrate and a non-shear uniform eigenstrain field inside the particle. As a result of axial symmetry, two Papkovitch-Neuber displacement potential functions are sufficient to represent the elastic solution. The surface and interface stress effects are fully represented utilizing Gurtin and Murdoch's theory of surface and interface elasticity. These effects modify the traction-continuity boundary conditions associated with the classical continuum elasticity theory. A complete methodology is presented resulting in the solution of the elastostatic Navier's equations. In contrast to the classical solution, the modified version introduces additional dependencies on the size of the nanoparticles as well as the surface and interface material properties.

Interface Stresses in Nanostructured Multilayered Materials

1995 ◽  
Vol 405 ◽  
Author(s):  
R. C. Cammarata ◽  
K. Sieradzki
Keyword(s):  
Simple Model ◽  
Mechanical Behavior ◽  
Nanostructured Materials ◽  
Interface Stress ◽  
Solid Surfaces ◽  
Thermodynamic Quantities ◽  
Surface And Interface ◽  
Surfaces And Interfaces ◽  
Multilayered Materials

AbstractSurface and interface stresses, which are intrinsic thermodynamic quantities associated with all types of solid surfaces and interfaces are reviewed. A simple model for one type of interface stress is presented. These stresses can strongly influence the structure and mechanical behavior of nanostructured materials such as multilayered materials withultrathin layer thicknesses.

INTRINSIC SURFACE AND INTERFACE STRESS OF LOW-DIMENSIONAL CRYSTALS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 64-70 ◽  
Author(s):  
Q. JIANG ◽  
D. S. ZHAO ◽  
M. ZHAO
Keyword(s):  
Theoretical Consideration ◽  
Size Dependence ◽  
Interface Energy ◽  
Liquid Interface ◽  
Interface Stress ◽  
Surface And Interface ◽  
Low Dimensional ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Theoretical Results

Based on the theoretical consideration on the size-dependence of solid-liquid interface energy, a model for the intrinsic interface stress of metallic, ionic and semiconductor nanosolid has been developed, free from adjustable parameters. Modeling predictions agree well with experimental observations and other theoretical results.

Stress Effects in p-Type AlGaN/GaN Heterostructures

2001 ◽  
Vol 680 ◽  
Author(s):  
Agustinus Sutandi ◽  
P. Paul Ruden ◽  
Kevin F. Brennan
Keyword(s):  
Valence Band ◽  
Interfacial Polarization ◽  
Defect States ◽  
Surface And Interface ◽  
Linear Elastic ◽  
Stress Effects ◽  
Interface Defect ◽  
Bulk Surface ◽  
Linear Elastic Theory ◽  
P Type

ABSTRACTThe physics of bulk wurtzite-structure III-nitride materials and of III-nitride heterostructures includes many phenomena that can be modulated by the application of stress. In particular, p- type material is expected to display a rich variety of piezo-resistive and piezo-optic effects that originate from the stress-induced modulation of lattice polarization charges, of valence band energies, and of bulk, surface, and interface defect states in the band gap. Here we focus on the expected effects of in-plane uniaxial on p-channel AlGaN/GaN heterostructures grown along the hexagonal axis on sapphire substrates. The valence band structure in the channel region is calculated self-consistently in the framework of a six-band Rashba-Sheka-Pikus (RSP) Hamiltonian. Stress-effects are included (in linear elastic theory) through deformation potentials and through the modulation of interfacial polarization charges associated with the piezoelectric nature of the constituent materials.

Surface Stress Effects on Thin Film Growth

1993 ◽  
Vol 317 ◽  
Author(s):  
R.C. Cammarata
Keyword(s):  
Thin Film ◽  
Surface Stress ◽  
Critical Thickness ◽  
Film Growth ◽  
Thin Film Growth ◽  
Stress Generation ◽  
Intrinsic Stress ◽  
Surface And Interface ◽  
Stress Effects

ABSTRACTA review of surface and interface stresses relevant to thin film growth is presented. It is shown that surface stress effects that are generally ignored in the analysis of epitaxy can have an influence on the critical thickness for epitaxy, especially at larger Misfits. A discussion of intrinsic stress generation from surface stress is also presented.

Surface and Interface Stress in Epitaxial Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
H. Ibach ◽  
A. Grossmann.
Keyword(s):  
Charge Transfer ◽  
Epitaxial Growth ◽  
Surface Stress ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Interface Stress ◽  
Experimental Measurements ◽  
Surface And Interface ◽  
Large Factor

AbstractRecent experimental measurements on the interface stresses in two heteroepitaxial systems have shown that the interface stresses were unexpectedly large. For thin deposited layers, the interface stress can exceed the stress caused by the lattice mismatch by far. Arguments are presented which indicate that the surface stress may be caused by the charge transfer between the deposit and the substrate. The consequences for the critical thickness of pseudomorphic films are discussed and it is shown that depending on the sign of the interface stress and the mismatch the critical thickness can be either reduced or enhanced by a large factor.

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