Surface and Interface Stress in Epitaxial Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
H. Ibach ◽  
A. Grossmann.
Keyword(s):  
Charge Transfer ◽  
Epitaxial Growth ◽  
Surface Stress ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Interface Stress ◽  
Experimental Measurements ◽  
Surface And Interface ◽  
Large Factor

AbstractRecent experimental measurements on the interface stresses in two heteroepitaxial systems have shown that the interface stresses were unexpectedly large. For thin deposited layers, the interface stress can exceed the stress caused by the lattice mismatch by far. Arguments are presented which indicate that the surface stress may be caused by the charge transfer between the deposit and the substrate. The consequences for the critical thickness of pseudomorphic films are discussed and it is shown that depending on the sign of the interface stress and the mismatch the critical thickness can be either reduced or enhanced by a large factor.

Surface Stress Effects on Thin Film Growth

1993 ◽  
Vol 317 ◽  
Author(s):  
R.C. Cammarata
Keyword(s):  
Thin Film ◽  
Surface Stress ◽  
Critical Thickness ◽  
Film Growth ◽  
Thin Film Growth ◽  
Stress Generation ◽  
Intrinsic Stress ◽  
Surface And Interface ◽  
Stress Effects

ABSTRACTA review of surface and interface stresses relevant to thin film growth is presented. It is shown that surface stress effects that are generally ignored in the analysis of epitaxy can have an influence on the critical thickness for epitaxy, especially at larger Misfits. A discussion of intrinsic stress generation from surface stress is also presented.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

Simulation of the Organization of Heteroepitaxial Monolayer Islands Under Anisotropic Conditions

2004 ◽  
Vol 854 ◽  
Author(s):  
Gajendra Pandey ◽  
Robert V. Kukta
Keyword(s):  
Point Defects ◽  
Surface Stress ◽  
Lattice Mismatch ◽  
Finite Size ◽  
Source Model ◽  
Crystalline Material ◽  
Elastic Fields ◽  
High Anisotropy ◽  
Degree Of Anisotropy ◽  
Hexagonal Arrays

ABSTRACTThis paper addresses the effect of anisotropy on the organization of epitaxial islands deposited on a substrate. Focus is on in-plane anisotropies in surface stress and lattice mismatch between the film and substrate materials. Starting from a configuration where island sizes and position are random, evolution towards equilibrium through mass transport via condensation/evaporation is simulated. The effect of the degree of anisotropy is investigated. An efficient numerical method is obtained by reducing a model of square monolayer islands of finite size to point defects that interact through their elastic fields. Models for both the kinetics and energetics of the system are obtained by this reduction. It is found that the point source model is accurate for island separations larger than about 3 times the width of an island. Under isotropic conditions islands tend to form into hexagonal arrays, and as there is no preferred orientation of these arrays, defects analogous to grain boundaries in a crystalline material tend to arise. With anisotropy islands tend to align in particular directions. This is found to enhance organization in cases of modest anisotropy and cause islands to form into zigzagged lines in cases of high anisotropy.

scholarly journals Nanoparticles and the influence of interface elasticity

2008 ◽  
Vol 35 (1-3) ◽  
pp. 267-286 ◽  
Author(s):  
Mi Changwen ◽  
Demitris Kouris
Keyword(s):  
Material Properties ◽  
Axial Symmetry ◽  
Outer Boundary ◽  
Elastic Field ◽  
Interface Stress ◽  
Axially Symmetric ◽  
Displacement Potential ◽  
Surface And Interface ◽  
Stress Effects ◽  
Interface Elasticity

In this manuscript, we discuss the influence of surface and interface stress on the elastic field of a nanoparticle, embedded in a finite spherical substrate. We consider an axially symmetric traction field acting along the outer boundary of the substrate and a non-shear uniform eigenstrain field inside the particle. As a result of axial symmetry, two Papkovitch-Neuber displacement potential functions are sufficient to represent the elastic solution. The surface and interface stress effects are fully represented utilizing Gurtin and Murdoch's theory of surface and interface elasticity. These effects modify the traction-continuity boundary conditions associated with the classical continuum elasticity theory. A complete methodology is presented resulting in the solution of the elastostatic Navier's equations. In contrast to the classical solution, the modified version introduces additional dependencies on the size of the nanoparticles as well as the surface and interface material properties.

In situ epitaxial growth of Ag3PO4 quantum dots on hematite nanotubes for high photocatalytic activities

2019 ◽  
Vol 6 (10) ◽  
pp. 2747-2755 ◽  
Author(s):  
Junyuan Duan ◽  
Leilei Xu ◽  
Youwen Liu ◽  
Bingxin Liu ◽  
Tianyou Zhai ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photocatalytic Activity ◽  
Charge Transfer ◽  
Epitaxial Growth ◽  
Photocatalytic Activities ◽  
Phosphate Anions

Surface-adsorbed phosphate anions on Fe2O3 nanotubes can guide the in situ epitaxial growth of Ag3PO4 quantum dots on the nanotubes, efficiently improving the photogenerated charge transfer and photocatalytic activity.

Charge transfer adsorption in silicon vapor‐phase epitaxial growth

1988 ◽  
Vol 63 (2) ◽  
pp. 390-394 ◽  
Author(s):  
A. Ishitani ◽  
T. Takada ◽  
Y. Ohshita
Keyword(s):  
Charge Transfer ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Silicon Vapor
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