Nitrogen implantation in 4H and 6H–SiC

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

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Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.499352 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Shimizu ◽

T. Kuroi ◽

Y. Kawasaki ◽

S. Kusunoki ◽

Y. Okumura ◽

...

Keyword(s):

Side Wall ◽

Nitrogen Implantation ◽

Surface Proximity

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Epitaxy of titanium nitride thin films grown by nitrogen implantation

Thin Solid Films ◽

10.1016/0040-6090(96)08568-9 ◽

1996 ◽

Vol 281-282 ◽

pp. 32-35 ◽

Cited By ~ 4

Author(s):

Y. Kasukabe ◽

J. Ootubo ◽

S. Takeda ◽

S. Nagata ◽

M. Kishimoto ◽

...

Keyword(s):

Thin Films ◽

Titanium Nitride ◽

Nitrogen Implantation

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Nitrogen implantation for local inhibition of oxidation

Applied Physics Letters ◽

10.1063/1.97828 ◽

1987 ◽

Vol 50 (2) ◽

pp. 89-91 ◽

Cited By ~ 5

Author(s):

Pascale Berruyer ◽

Michel Bruel

Keyword(s):

Nitrogen Implantation ◽

Local Inhibition

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Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.733 ◽

2013 ◽

Vol 740-742 ◽

pp. 733-736 ◽

Cited By ~ 2

Author(s):

Krystian Król ◽

Mariusz Sochacki ◽

Marcin Turek ◽

Jerzy Żuk ◽

Henryk M. Przewlocki ◽

...

Keyword(s):

Raman Spectroscopy ◽

Electrical Properties ◽

Surface State ◽

Material Properties ◽

Implantation Dose ◽

Nitrogen Implantation ◽

Mos Structure ◽

Implantation Damage ◽

Wide Range ◽

Implantation Dosage

In this article, an influence of nitrogen implantation dosage on SiC MOS structure is analyzed using wide range of nitrogen implantation dose (between ~1013 – 1016). Authors analyzed electrical and material properties of investigated samples using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that surface state trap density is directly connected to implantation damage and thus implantation conditions. Using research results a trap origin at given energy can be concluded.

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Synthesis of Iron Oxynitride by Nitrogen Ion Implantation of Iron Oxide

MRS Proceedings ◽

10.1557/proc-100-261 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 2

Author(s):

S. B. Ogale ◽

Seema Teli ◽

Sunita Chopda ◽

D. M. Phase ◽

S. M. Kanetkar

Keyword(s):

Iron Oxide ◽

Ion Implantation ◽

Conversion Electron ◽

Mossbauer Spectroscopy ◽

Nitrogen Implantation ◽

Nitrogen Ion Implantation ◽

Conversion Electron Mössbauer Spectroscopy ◽

Conversion Electron Mossbauer Spectroscopy ◽

Implantation Process ◽

Nitrogen Ion

ABSTRACTThe effect of N2+ ion implantation in ∝-Fe2O3 has been investigated by means of Conversion Electron Mossbauer Spectroscopy (CEMS). It Is shown that at a dose value of 1×1017 ions/cm2 and 3×1017 Ions/cm2 the samples exhibit new Interesting hyperfine features which can not be ascribed to known oxide or nitride phases. It Is thus concluded that Iron Oxynitrlde Is formed by the nitrogen Implantation process.

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