scholarly journals Characteristic Growth Processes of Ice Crystals on the Antarctic Ice Sheet

1988 ◽  
Vol 11 ◽  
pp. 104-108 ◽  
Author(s):  
Hiroshi Nishimura ◽  
Norikazu Maeno
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Temperature Gradient ◽  
Apparent Activation Energy ◽  
Temperature Dependence ◽  
Growth Rates ◽  
Ice Crystals ◽  
Gradient Layer ◽  
Isothermal Layer ◽  
Characteristic Growth

Characteristic growth processes were investigated by measuring cross-sectional areas of ice crystals for four 30 m snow cores drilled in Mizuho Plateau, Antarctica. Considerable difference was found in the growth rate of crystals between a temperature-gradient layer above 6 m depth and an isothermal layer below 10 m depth: the growth rate in the temperature-gradient layer was much larger than that in the isothermal layer. In the isothermal layer, temperature dependence of the growth rate K was expressed by an equation K = K 0 exp(−E/RT), where R and T are the gas constant and absolute temperature respectively. The apparent activation energy E is 44.7 kJ mol−1. On the other hand, in the temperature-gradient layer, the apparent activation energy was as small as 12 kJ mol−1: the difference was explained as due to the temperature gradient. Using the temperature profiles in snow that have been estimated from the meteorological data from several stations, the growth rates in the temperature-gradient layer were calculated. The calculated temperature dependence of the growth rates, taking into consideration vertical flux of water vapor between ice particles caused by the temperature gradient, showed good agreement with measured results. It is concluded that the growth process in the layer above 6 m depth is mainly due to vapor transport under the vertical temperature gradient.

scholarly journals Characteristic Growth Processes of Ice Crystals on the Antarctic Ice Sheet

1988 ◽  
Vol 11 ◽  
pp. 104-108 ◽  
Author(s):  
Hiroshi Nishimura ◽  
Norikazu Maeno
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Temperature Gradient ◽  
Apparent Activation Energy ◽  
Temperature Dependence ◽  
Growth Rates ◽  
Ice Crystals ◽  
Gradient Layer ◽  
Isothermal Layer ◽  
Characteristic Growth

Characteristic growth processes were investigated by measuring cross-sectional areas of ice crystals for four 30 m snow cores drilled in Mizuho Plateau, Antarctica. Considerable difference was found in the growth rate of crystals between a temperature-gradient layer above 6 m depth and an isothermal layer below 10 m depth: the growth rate in the temperature-gradient layer was much larger than that in the isothermal layer. In the isothermal layer, temperature dependence of the growth rate K was expressed by an equation K = K0 exp(−E/RT), where R and T are the gas constant and absolute temperature respectively. The apparent activation energy E is 44.7 kJ mol−1.On the other hand, in the temperature-gradient layer, the apparent activation energy was as small as 12 kJ mol−1: the difference was explained as due to the temperature gradient. Using the temperature profiles in snow that have been estimated from the meteorological data from several stations, the growth rates in the temperature-gradient layer were calculated. The calculated temperature dependence of the growth rates, taking into consideration vertical flux of water vapor between ice particles caused by the temperature gradient, showed good agreement with measured results. It is concluded that the growth process in the layer above 6 m depth is mainly due to vapor transport under the vertical temperature gradient.

scholarly journals Role of carbon allocation efficiency in the temperature dependence of autotroph growth rates

2018 ◽  
Vol 115 (31) ◽  
pp. E7361-E7368 ◽  
Author(s):  
Bernardo García-Carreras ◽  
Sofía Sal ◽  
Daniel Padfield ◽  
Dimitrios-Georgios Kontopoulos ◽  
Elvire Bestion ◽  
...  
Keyword(s):  
Growth Rate ◽  
Temperature Dependence ◽  
Growth Rates ◽  
Carbon Allocation ◽  
Thermal Sensitivity ◽  
Potential Growth ◽  
Allocation Efficiency ◽  
Population Growth Rates ◽  
Performance Curves

Relating the temperature dependence of photosynthetic biomass production to underlying metabolic rates in autotrophs is crucial for predicting the effects of climatic temperature fluctuations on the carbon balance of ecosystems. We present a mathematical model that links thermal performance curves (TPCs) of photosynthesis, respiration, and carbon allocation efficiency to the exponential growth rate of a population of photosynthetic autotroph cells. Using experiments with the green alga, Chlorella vulgaris, we apply the model to show that the temperature dependence of carbon allocation efficiency is key to understanding responses of growth rates to warming at both ecological and longer-term evolutionary timescales. Finally, we assemble a dataset of multiple terrestrial and aquatic autotroph species to show that the effects of temperature-dependent carbon allocation efficiency on potential growth rate TPCs are expected to be consistent across taxa. In particular, both the thermal sensitivity and the optimal temperature of growth rates are expected to change significantly due to temperature dependence of carbon allocation efficiency alone. Our study provides a foundation for understanding how the temperature dependence of carbon allocation determines how population growth rates respond to temperature.

scholarly journals Crystal growth rates in polar firn

1993 ◽  
Vol 18 ◽  
pp. 208-210
Author(s):  
Hitoshi Shoji ◽  
Atau Mitani ◽  
Kohji Horita ◽  
Chester C. Langway
Keyword(s):  
Growth Rate ◽  
Plastic Deformation ◽  
Crystal Growth ◽  
Growth Rates ◽  
Strain Field ◽  
Crystal Size ◽  
Ice Core ◽  
Transformation Process ◽  
Ice Crystals ◽  
Air Bubbles

Continuous crystal-size measurements made on the G6 Antarctic ice core (100m deep) show enhanced growth rates above a depth of 30 m (Zone 1) and in the interval between 70 and 80 m (Zone 2). Crystal growth in Zone 1 most probably takes place by a process of sublimation and condensation. The higher growth rate in Zone 2 is most probably related to the pore close-off transformation process in which a non-uniform strain field is created to form air bubbles by plastic deformation and “cannibalization” of individual ice crystals.

Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex

1995 ◽  
Vol 10 (2) ◽  
pp. 320-327 ◽  
Author(s):  
R.A. Levy ◽  
E. Mastromatteo ◽  
J.M. Grow ◽  
V. Paturi ◽  
W.P. Kuo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Apparent Activation Energy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Index Of Refraction ◽  
Arrhenius Behavior ◽  
Pressure Chemical

In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3 is present, the growth rate was observed to follow an Arrhenius behavior in the temperature range of 600 to 800 °C with an apparent activation energy of 11 kcal/mol. A linear dependence of growth rate is observed as a function of square root of flow rate for the TEAB range of 20 to 60 sccm, indicating that the reaction rate is controlled by the adsorption of borane. The addition of NH3 to TEAB had the effect of lowering the deposition temperature down to 300 °C and increasing the apparent activation energy to 22 kcal/mol. Above 650 °C, the carbon concentration of the deposits increased significantly, reflecting the breakup of the amine molecule. X-ray diffraction measurements indicated the films to be in all cases amorphous. Infrared spectra of the films showed absorption peaks representing the vibrational modes of B-N, B-N-B, B-H, and N-H. The index of refraction varied between 1.76 and 2.47, depending on composition of the films. Films deposited with no NH3 above 700 °C were seen to be compressive while films below that temperature were tensile. In the range of 350 to 475 °C, the addition of NH3 to TEAB resulted in films that were mildly tensile, while below 325 °C and above 550 °C, the films were found to be compressive. Both the hardness and Young's modulus of the films decreased with higher temperatures, reflecting the influence of the carbon presence.

scholarly journals Crystal growth rates in polar firn

1993 ◽  
Vol 18 ◽  
pp. 208-210 ◽  
Author(s):  
Hitoshi Shoji ◽  
Atau Mitani ◽  
Kohji Horita ◽  
Chester C. Langway
Keyword(s):  
Growth Rate ◽  
Plastic Deformation ◽  
Crystal Growth ◽  
Growth Rates ◽  
Strain Field ◽  
Crystal Size ◽  
Ice Core ◽  
Transformation Process ◽  
Ice Crystals ◽  
Air Bubbles

Continuous crystal-size measurements made on the G6 Antarctic ice core (100m deep) show enhanced growth rates above a depth of 30 m (Zone 1) and in the interval between 70 and 80 m (Zone 2). Crystal growth in Zone 1 most probably takes place by a process of sublimation and condensation. The higher growth rate in Zone 2 is most probably related to the pore close-off transformation process in which a non-uniform strain field is created to form air bubbles by plastic deformation and “cannibalization” of individual ice crystals.

Elektrotransportversuche mit epitaktischen Goldschichten

1979 ◽  
Vol 34 (10) ◽  
pp. 1196-1202
Author(s):  
W. Kleinn ◽  
H. Hübner
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Electron Microscope ◽  
Temperature Gradient ◽  
Transmission Electron Microscope ◽  
Direct Current ◽  
Gold Films ◽  
Temperature Range ◽  
Transmission Electron ◽  
Current Densities

Abstract Electrotransport Experiments with Epitaxial Gold Films Electrotransport in gold films of 60 nm thickness grown epitaxially onto hot (100) NaCl substrate is determined from the growth rate of voids forming in the temperature gradient in short specimens observed in the transmission electron microscope while loaded with direct current densities of several 106 A/cm2 . For the temperature range 631 -1214 K an activation energy (1,19 ± 0,05) eV is found.

scholarly journals Ice Crystals Growing from Vapor in Supercooled Clouds between −2.5° and −22°C: Testing Current Parameterization Methods Using Laboratory Data

2011 ◽  
Vol 68 (10) ◽  
pp. 2416-2429 ◽  
Author(s):  
C. D. Westbrook ◽  
A. J. Heymsfield
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Laboratory Data ◽  
Ice Crystals ◽  
Fall Velocity ◽  
Numerical Work ◽  
Mass Size ◽  
Significant Disagreement ◽  
Wind Tunnel Data ◽  
Crystal Mass

Abstract The physical and empirical relationships used by microphysics schemes to control the rate at which vapor is transferred to ice crystals growing in supercooled clouds are compared with laboratory data to evaluate the realism of various model formulations. Ice crystal growth rates predicted from capacitance theory are compared with measurements from three independent laboratory studies. When the growth is diffusion- limited, the predicted growth rates are consistent with the measured values to within about 20% in 14 of the experiments analyzed, over the temperature range −2.5° to −22°C. Only two experiments showed significant disagreement with theory (growth rate overestimated by about 30%–40% at −3.7° and −10.6°C). Growth predictions using various ventilation factor parameterizations were also calculated and compared with supercooled wind tunnel data. It was found that neither of the standard parameterizations used for ventilation adequately described both needle and dendrite growth; however, by choosing habit-specific ventilation factors from previous numerical work it was possible to match the experimental data in both regimes. The relationships between crystal mass, capacitance, and fall velocity were investigated based on the laboratory data. It was found that for a given crystal size the capacitance was significantly overestimated by two of the microphysics schemes considered here, yet for a given crystal mass the growth rate was underestimated by those same schemes because of unrealistic mass/size assumptions. The fall speed for a given capacitance (controlling the residence time of a crystal in the supercooled layer relative to its effectiveness as a vapor sink, and the relative importance of ventilation effects) was found to be overpredicted by all the schemes in which fallout is permitted, implying that the modeled crystals reside for too short a time within the cloud layer and that the parameterized ventilation effect is too strong.

Effect of Filament Material on the Decomposition of SiH4 in Hot Wire CVD of Si-Based Films

2002 ◽  
Vol 715 ◽  
Author(s):  
H. L. Duan ◽  
G. A. Zaharias ◽  
Stacey F. Bent
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Apparent Activation Energy ◽  
Surface Reaction ◽  
Film Growth ◽  
Activation Energies ◽  
Film Deposition ◽  
The Other ◽  
Hot Wire ◽  
Radical Production

AbstractThe choice of filament material has an effect on the decomposition of silane during the hot wire chemical vapor deposition (HW-CVD) of amorphous and microcrystalline silicon films. The Si radicals produced from W, Re, Mo and Ta filament materials have been probed by laserbased single photon ionization (SPI) as a function of hot wire temperature. The Si radical profiles are shown to demonstrate two distinct regimes: a regime below 1600°C-1800°C (depending on filament material) limited by surface reaction at the filament in which Si concentration increases monotonically; and a mass transfer limited regime above 1600°C-1800°C where Si intensity saturates. The apparent activation energy of Si radical production in the surface reaction regime from Ta (140-170 kcal/mol) is found to be close to the corresponding Si thermal desorption energy from a Ta surface, suggesting that the Si production is controlled by the desorption process from the bare metal. On the other hand, the Si activation energies from W and Re (30-60 kcal/mol) are lower than the related desorption energies, suggesting that other rate limiting reactions play a role for these materials. The apparent activation energy for the Mo surface (60-90 kcal/mol) is intermediate between the other metal values. In addition to the Si radical study, corresponding film deposition is detected in situ by multiple internal reflection infrared (MIR-IR) spectroscopy. The IR measurements have been used to estimate the growth rate of a-Si:H deposited on a Ge substrate. The results show similar activation energies for both the growth rate and the Si formation from a W filament, implying that Si radical production and subsequent film growth may be dominated by the same elementary reactions within the decomposition and film growth processes at low pressure.

Influence of Growth Rate on the Solute Distribution of Directionally Solidified Cu-Ag-Zr Alloy

2011 ◽  
Vol 275 ◽  
pp. 192-195
Author(s):  
Bok Hyun Kang ◽  
Woo Hyun Lee ◽  
Ki Young Kim ◽  
Hoon Cho ◽  
Jae Soo Noh
Keyword(s):  
Electrical Conductivity ◽  
Growth Rate ◽  
Temperature Gradient ◽  
Constant Temperature ◽  
Vickers Hardness ◽  
Growth Rates ◽  
Back Diffusion ◽  
Directionally Solidified ◽  
Constant Temperature Gradient ◽  
Zr Alloy

Cu-2wt.Ag-2wt.%Zr alloy was directionally solidified with different growth rates(V=10-200 um/s) at a constant temperature gradient(G=3.1 K/mm) in a modified Bridgman furnace. The influence of growth rate was investigated by observing the microstructure and measuring the solutes’ compositions within the Cu-matrix and dendrite boundaries. The experimental results show that increasing the growth rate, decreased both the primary and secondary arm spacing and increased micro-Vickers hardness. The solutes’ concentration also increased as a result of the back diffusion caused by a decreasing growth rate. The electrical conductivity depends on the solutes’ distribution.

LPCVD of Silicon Nitride Films From Hexachlorodisilane and Ammonia

1987 ◽  
Vol 105 ◽  
Author(s):  
R. C. Taylor ◽  
B. A. Scot
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Silicon Nitride ◽  
Physical Properties ◽  
Growth Rates ◽  
Rate Data ◽  
Kcal Mole ◽  
Silicon Nitride Films ◽  
Kinetically Controlled ◽  
Controlled Deposition

AbstractHexachlorodisilane (Si2Cl6) has been used as an alternative to dichlorosilane and silane for growth of silicon nitride films. The films were grown at a pressure of 0.7 Torr at temperatures between 450° and 850°C. Growth rate data indicates a kinetically controlled deposition with an activation energy of 29.3 kcal/mole. Growth rates are substantially higher than those obtained from SiH2Cl2 under similar conditions, and the physical properties of the films are essentially the same. At the higher growth temperatures stoichiometric Si3N4 films with no detectable chlorine can be obtained when a NH3/Si2Cl6 ratio of 60 or greater is used.

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