TEM characterization of SiGe heterolayers grown on SIMOX

1991 ◽  
Vol 49 ◽  
pp. 886-887
Author(s):  
N. David Theodore ◽  
Peter Fejes ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Vapor Deposition ◽  
Infrared Detectors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Strain Fields ◽  
Device Structures ◽  
Defect Densities

SiGe heterolayers are of interest for use in heterojunction transistors, infrared detectors and field-effect transistors. SIMOX (Separation of silicon by IMplanted OXygen) is useful for fabrication of silicon-on-insulator (SOI) structures (electrically isolated from the substrate). SIMOX could potentially be used for isolation of SiGe structures from the substrate. Epitaxial-Si grown on SIMOX (required for some device structures) can have grown-in dislocations that arise due to STMOX-related damage. If SiGe heterolayers were grown on silicon, dislocations could interact with the strain fields associated with the SiGe layers. Such interaction could possibly lead to a reduction in defect densities in upper layers of the structures. In the present study, SiGe heterolayers grown on SIMOX by chemical vapor deposition were characterized using TEM. The structures consisted of epi-silicon grown on a Si/Sii-xGex superlattice which was in turn grown on a Si/SiO2 (SIMOX) structure. The behavior of defects in the structures was of interest.

Chemical vapor deposition and electrical characterization of sub-10nm diameter InSb nanowires and field-effect transistors

2010 ◽  
Vol 121 (3) ◽  
pp. 397-401 ◽  
Author(s):  
Rajat Kanti Paul ◽  
Miroslav Penchev ◽  
Jiebin Zhong ◽  
Mihrimah Ozkan ◽  
Maziar Ghazinejad ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Insb Nanowires

Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition

2020 ◽  
Vol 67 (4) ◽  
pp. 1839-1844 ◽  
Author(s):  
M. Asghari Heidarlou ◽  
P. Paletti ◽  
B. Jariwala ◽  
J. A. Robinson ◽  
S. K. Fullerton-Shirey ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

scholarly journals Doping free transfer of graphene using aqueous ammonia flow

RSC Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 1127-1131 ◽  
Author(s):  
Morteza Hassanpour Amiri ◽  
Jonas Heidler ◽  
Ahmar Hasnain ◽  
Saleem Anwar ◽  
Hao Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Dirac Point ◽  
Aqueous Ammonia ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Technical Challenge ◽  
Catalytic Chemical Vapor Deposition ◽  
Graphene Layers

The paper addresses the technical challenge of producing doping-free transferred graphene layers produced by catalytic chemical vapor deposition (CVD), thereby preventing uncontrolled shift of the Dirac point in comprising field-effect transistors.

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