Defect Characterization in a CVD α-Si3N4
Silicon nitride possesses an attractive combination of thermo-mechanical properties which makes it a strong candidate material for many structural ceramic applications. Unfortunately, many of the conventional processing techniques used to produce Si3N4, such as hot-pressing, sintering, and hot-isostatic pressing, utilize significant amounts of densification aids (Y2O3, Al2O3, MgO, etc.) which can ultimately lower the utilization temperatures to well below that of pure Si3N4. Chemical vapor deposition (CVD) is an alternative processing method for producing pure Si3N4. The CVD Si3N4 material examined in this study was supplied by Union Carbide. Deposition was performed at 1450°C and 1 Torr pressure using SiCl4 and NH3 as the reacting gases. The CVD methods used were similar to those described by Niihara and Hirai.