Growth and characterization of aluminum nitride thin films

1991 ◽  
Vol 49 ◽  
pp. 952-953
Author(s):  
M. Grant Norton ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Phonon Scattering ◽  
Heat Sinks ◽  
Oxide Ceramics ◽  
Multicomponent Oxide ◽  
Crystalline Films ◽  
Potential Applications ◽  
Defects And Impurities

Pulsed-laser ablation has been widely used for the fabrication of thin films of multicomponent oxide ceramics. More recently the technique has been successfully used to deposit highly oriented thin films of aluminum nitride (AIN). AIN thin films are of interest for a number of potential applications. These applications include heat sinks for high-power microcircuit applications and insulating and passivating layers in semiconductor devices. For all the proposed applications it is important to be able to produce highly oriented, dense crystalline films. It is also important that these films be essentially defect free, as for example, phonon scattering by defects and impurities can severely limit thermal conductivity.

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

2015 ◽  
Vol 574 ◽  
pp. 110-114 ◽  
Author(s):  
H. Oikawa ◽  
R. Akiyama ◽  
K. Kanazawa ◽  
S. Kuroda ◽  
I. Harayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Gate Insulator

scholarly journals Development of a High-Density Piezoelectric Micromachined Ultrasonic Transducer Array Based on Patterned Aluminum Nitride Thin Film

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 623 ◽  
Author(s):  
Eunjung Shin ◽  
Hong Goo Yeo ◽  
Ara Yeon ◽  
Changzhu Jin ◽  
Wonki Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Resonant Frequency ◽  
Fill Factor ◽  
Ultrasonic Transducer ◽  
Peak Displacement ◽  
Biomedical Sensing ◽  
Potential Applications ◽  
Pressure Output

This study presents the fabrication and characterization of a piezoelectric micromachined ultrasonic transducer (pMUT; radius: 40 µm) using a patterned aluminum nitride (AlN) thin film as the active piezoelectric material. A 20 × 20 array of pMUTs using a 1 µm thick AlN thin film was designed and fabricated on a 2 × 2 mm2 footprint for a high fill factor. Based on the electrical impedance and phase of the pMUT array, the electromechanical coefficient was ~1.7% at the average resonant frequency of 2.82 MHz in air. Dynamic displacement of the pMUT surface was characterized by scanning laser Doppler vibrometry. The pressure output while immersed in water was 19.79 kPa when calculated based on the peak displacement at the resonant frequency. The proposed AlN pMUT array has potential applications in biomedical sensing for healthcare, medical imaging, and biometrics.

An Experimental Study on the Effect of Configuration of Multiple Microchannels on Heat Removal for Electronic Cooling

2010 ◽  
Author(s):  
Jingru Zhang ◽  
Shaurya Prakash ◽  
Yogesh Jaluria ◽  
Lei Lin
Keyword(s):  
Heat Transfer ◽  
Heat Sink ◽  
Heat Removal ◽  
Electronic Cooling ◽  
Heat Sinks ◽  
Flow Loop ◽  
Labview Software ◽  
Chemical Etch ◽  
Potential Applications

This paper presents the design, fabrication, and characterization of three different configurations of multiple microchannel heat sink devices to improve their overall cooling efficiency for potential applications in electronic cooling. A fabrication and packaging process based on standard UV-lithography, wet etching, and bonding was developed to allow a rapid parametric study. An anisotropic chemical etch with potassium hydroxide, water, and isopropanol is used to fabricate microchannels on (110)-oriented silicon wafers. PDMS (Polydimethylsiloxane) was tested as the cover of microchannels due to its mechanical flexibility. It is transparent so that the microchannel flow can be visualized using a microscope. An open flow loop, which consists of syringe pump and a power supply, was designed to test the heat sinks with different configurations. Temperature data were collected at different locations by a Data Acquisition (DAQ) system and recorded by Labview software to investigate the heat transfer characteristics of the heat sink. Three heat sinks, with different configurations, were tested. They all included microchannels of width 50 μm, depth 60 μm, and fin width 200 μm. Some Typical results on heat transfer are presented, along with discussion on the efficiency for heat removal.

Fabrication and characterization of aluminum nitride pedestal-type optical waveguide

2014 ◽  
Vol 92 (7/8) ◽  
pp. 951-954 ◽  
Author(s):  
M.A. Alvarado ◽  
M.V. Pelegrini ◽  
I. Pereyra ◽  
T.A.A. de Assumpção ◽  
L.R.P. Kassab ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Optical Waveguides ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Pure Aluminum ◽  
Core Layer ◽  
Cladding Layer ◽  
Fabrication And Characterization

In this paper we present the fabrication and characterization of pedestal-type optical waveguides using aluminum nitride (AlN) as core layer. To the best knowledge of the authors, the utilization of AlN as core layer in pedestal-type waveguides has not been studied. The AlN thin films were obtained by radio frequency reactive magnetron sputtering from a pure aluminum target. The AlN refractive index was determined by ellipsometry. The optical waveguides were fabricated by the pedestal technique, which consists in etching the silicon oxide lower cladding layer before depositing the core layer. Thus, the waveguide geometrical definition is simplified because etching the AlN core is not necessary. AlN thin films of 0.6, 1, and 1.2 μm thick were deposited on thermally grown silicon dioxide using crystalline silicon (100) as substrate. The pedestal profile was defined using conventional photolithography, followed by plasma etching of the cladding layer. Optical propagation losses were measured for pedestal heights of 1 μm and widths from 1 to 100 μm.

Deposition and characterization of non-conducting silicon nitride, aluminum nitride and titanium-aluminum nitride thin films

1993 ◽  
Vol 59 (1-3) ◽  
pp. 187-192 ◽  
Author(s):  
I.J.R. Baumvol ◽  
F.C. Stedile ◽  
W.H. Schreiner ◽  
F.L. Freire ◽  
A. Schröer
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Aluminum Nitride ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride
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