Development of a High-Density Piezoelectric Micromachined Ultrasonic Transducer Array Based on Patterned Aluminum Nitride Thin Film

This study presents the fabrication and characterization of a piezoelectric micromachined ultrasonic transducer (pMUT; radius: 40 µm) using a patterned aluminum nitride (AlN) thin film as the active piezoelectric material. A 20 × 20 array of pMUTs using a 1 µm thick AlN thin film was designed and fabricated on a 2 × 2 mm2 footprint for a high fill factor. Based on the electrical impedance and phase of the pMUT array, the electromechanical coefficient was ~1.7% at the average resonant frequency of 2.82 MHz in air. Dynamic displacement of the pMUT surface was characterized by scanning laser Doppler vibrometry. The pressure output while immersed in water was 19.79 kPa when calculated based on the peak displacement at the resonant frequency. The proposed AlN pMUT array has potential applications in biomedical sensing for healthcare, medical imaging, and biometrics.

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A new approach to characterization of the transition temperatures of thin film NiTi shape memory alloys

Journal of Materials Research ◽

10.1557/jmr.2004.0240 ◽

2004 ◽

Vol 19 (6) ◽

pp. 1762-1767

Author(s):

Nicholas W. Botterill ◽

David M. Grant ◽

Jianxin Zhang ◽

Clive J. Roberts

Keyword(s):

Thin Film ◽

Shape Memory Alloys ◽

Shape Memory ◽

Transition Temperatures ◽

New Approach ◽

Novel Approach ◽

Potential Applications ◽

Niti Shape Memory Alloys

A novel approach in determining the transition temperatures of NiTi shape memory alloys was investigated and compared with conventional techniques. The technique is based on microthemal analysis using a scanning thermal microscope (SThM). In particular, this method has the potential to allow the transformation temperatures of thin films to be investigated in situ. Thin film shape memory alloys have potential applications, such as microactuators, where conventional analysis techniques are either not directly applicable to such samples or are difficult to perform.

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Growth and Characterization of PbTe Thin-film through Solvo Thermal Method

Physical Science International Journal ◽

10.9734/psij/2019/v22i230126 ◽

2019 ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

B. A. Ahuome ◽

I. Adamu ◽

M. A. Adamu ◽

A. N. Baba-Kutigi

Keyword(s):

Thin Film ◽

Fill Factor ◽

Optical Band Gap ◽

Cadmium Sulphide ◽

Band Gap Energy ◽

Thermal Method ◽

Gravimetric Analysis ◽

Optical Absorbance ◽

Internal Parameters

The research considered the Solvo-Thermal method of growing PbTe on non-conducting glass substrate. Cadmium Sulphide thin-film was deposited and used as the n-type absorber layer. On the internal parameters studied, the PbTe nano-film has thickness of as measured through gravimetric analysis; the optical absorbance studied through the use of UV-750 Series spectrophotometer showed a stable absorbance within the visible wavelength (390 nm – 700 nm) and optical band gap energy of was obtained as extrapolated from the graph of against . The I-V pattern were measured and plotted. The PbTe grown through this method therefore show a good Fill factor of

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Fabrication and Characterization of Thin Film Solar Cell Made from CuIn0.75Ga0.25S2Wurtzite Nanoparticles

Journal of Nanomaterials ◽

10.1155/2013/320375 ◽

2013 ◽

Vol 2013 ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

Fengyan Zhang ◽

Chivin Sun ◽

Cyril Bajracharya ◽

Rene G. Rodriguez ◽

Joshua J. Pak

Keyword(s):

Thin Film ◽

Solar Cell ◽

Fill Factor ◽

Single Step ◽

Thin Film Solar Cells ◽

Wurtzite Phase ◽

Cigs Thin Film ◽

Fabrication And Characterization ◽

First Time

CuIn0.75Ga0.25S2(CIGS) thin film solar cells have been successfully fabricated using CIGS Wurtzite phase nanoparticles for the first time. The structure of the cell is Glass/Mo/CIGS/CdS/ZnO/ZnO:Al/Ag. The light absorption layer is made from CIGS Wurtzite phase nanoparticles that are formed from single-source precursors through a microwave irradiation. The Wurtzite phase nanoparticles were converted to Chalcopyrite phase film through a single-step annealing process in the presence of argon and sulfur at 450°C. The solar cell made from Wurtzite phase nanoparticles showed 1.6% efficiency and 0.42 fill factor.

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Fabrication and Characterization of Annular-Shaped Piezoelectric Micromachined Ultrasonic Transducer Mounted with Pb(Zr,Ti)O3-Based Monocrystalline Thin Film

Journal of Micromechanics and Microengineering ◽

10.1088/1361-6439/ac349f ◽

2021 ◽

Author(s):

Ziyi Liu ◽

Shinya Yoshida ◽

Shuji Tanaka

Keyword(s):

Thin Film ◽

Resonance Frequency ◽

High Performance ◽

Figure Of Merit ◽

Ultrasonic Transducer ◽

Device Fabrication ◽

Static Displacement ◽

Standard Design ◽

Displacement Sensitivity

Abstract In this study, we propose an annular-shaped piezoelectric micromachined ultrasonic transducer (pMUT) based on a Pb(Zr,Ti)O3-based monocrystalline thin film. This pMUT is expected to increase the resonance frequency while maintaining displacement sensitivity, making it superior to an island-shaped pMUT, which is a conventional design. To demonstrate the validity of this assumption, annular- and island-shaped pMUTs with a 60-μm-diameter diaphragm were prototyped and characterized. As a result, the annular-shaped pMUT exhibited a resonance frequency of 11.9 MHz, a static displacement sensitivity of 2.35 nm/V and a transmitting figure-of-merit (FOM) of 28 nm∙MHz/V. On the other hand, the island-shaped pMUT exhibited a resonance frequency of 9.6 MHz and a static displacement of 2.5 nm/V and an FOM of 24 nm∙MHz/V. Therefore, the annular-shaped pMUT was experimentally demonstrated to provide a higher FOM compared to the island-shaped pMUT. In addition, the annular-shaped pMUT with the optimal dimensions is found to be able to keep a relatively large fabrication margin. This is an advantageous point for the practical device fabrication. We believe this design has a potential to become a standard design for high-performance pMUT devices.

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Synthesis and Characterization of ZnO Thin Film Memristor

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.701.172 ◽

2013 ◽

Vol 701 ◽

pp. 172-175 ◽

Cited By ~ 6

Author(s):

Marmeezee Mohd Yusoff ◽

Mohd Hanafi Ani ◽

Suryanto

Keyword(s):

Thin Film ◽

Deposition Time ◽

Low Cost ◽

Electrical Measurement ◽

Zno Films ◽

Zno Thin Film ◽

Thin Film Thickness ◽

Potential Applications ◽

Pinched Hysteresis

ZnO films were deposited on Cu substrate using electrodeposition and thermal oxidation method. The effect of deposited thin film thickness varied with deposition time was discussed. Synthesized ZnO films were characterized using XRD, FE-SEM and electrical measurement. The results from electrical measurement showed the deposited ZnO exhibits pinched hysteresis IV curves. The synthesized ZnO shows a potential applications and options in production of a non-complex and low cost memristor.

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Deposition and Thermal Characterization of Nano-Structured Aluminum Nitride Thin Film on Cu–W Substrate for High Power Light Emitting Diode Package

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8315 ◽

2014 ◽

Vol 14 (8) ◽

pp. 5824-5827 ◽

Cited By ~ 1

Author(s):

Hyun Min Cho ◽

Min-Sun Kim

Keyword(s):

Thin Film ◽

Aluminum Nitride ◽

High Power ◽

Light Emitting Diode ◽

Thermal Characterization ◽

Light Emitting

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High temperature studies of thin film Aluminum Nitride and piezoelectric characterization of mesa structures

10.33915/etd.4461 ◽

2009 ◽

Author(s):

Richard Farrell

Keyword(s):

Thin Film ◽

High Temperature ◽

Aluminum Nitride

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Growth and characterization of aluminum nitride thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010008907x ◽

1991 ◽

Vol 49 ◽

pp. 952-953

Author(s):

M. Grant Norton ◽

Paul G. Kotula ◽

C. Barry Carter

Keyword(s):

Thin Films ◽

Aluminum Nitride ◽

Phonon Scattering ◽

Heat Sinks ◽

Oxide Ceramics ◽

Multicomponent Oxide ◽

Crystalline Films ◽

Potential Applications ◽

Defects And Impurities

Pulsed-laser ablation has been widely used for the fabrication of thin films of multicomponent oxide ceramics. More recently the technique has been successfully used to deposit highly oriented thin films of aluminum nitride (AIN). AIN thin films are of interest for a number of potential applications. These applications include heat sinks for high-power microcircuit applications and insulating and passivating layers in semiconductor devices. For all the proposed applications it is important to be able to produce highly oriented, dense crystalline films. It is also important that these films be essentially defect free, as for example, phonon scattering by defects and impurities can severely limit thermal conductivity.

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