HREM study of heteroepitaxial interfaces in the Ni.50Co.50O/Al2MgO4(100) system

1992 ◽  
Vol 50 (1) ◽  
pp. 374-375
Author(s):  
W. Cao ◽  
G. Thomas
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Film ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Epitaxial Films ◽  
Critical Factors ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Film Substrate

Epitaxial CoO/NiO multilayers and alloys have been produced which show interesting structural and magnetic properties. Typically, epitaxial films are grown either by chemical vapor deposition or evaporation. However, sputtering can also yield high quality epitaxial films. The structure of the substrate and the interface of the film/substrate are critical factors to determine the quality of the epitaxial film. The CoO/NiO epitaxial films on the α-Al2O3 had been studied extensively in our previous work. In this paper, the heteroepitaxial interface in the Ni.50Co.50O/Al2MgO4 is studied by using high resolution electron microscopy. Transmission electron microscopy was performed using the JEOL-200CX and JEOL-ARM1000 microscopes at the National Center for Electron Microscopy, Berkeley.

Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy

1999 ◽  
Vol 571 ◽  
Author(s):  
N. D. Zakharov ◽  
P. Werner ◽  
V. M. Ustinov ◽  
A.R. Kovsh ◽  
G. E. Cirlin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Critical Thickness ◽  
High Resolution Electron Microscopy ◽  
Geometrical Parameters ◽  
Inas Quantum Dots ◽  
Temperature Growth ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTQuantum dot structures containing 2 and 7 layers of small coherent InAs clusters embedded into a Si single crystal matrix were grown by MBE. The structure of these clusters was investigated by high resolution transmission electron microscopy. The crystallographic quality of the structure severely depends on the substrate temperature, growth sequence, and the geometrical parameters of the sample. The investigation demonstrates that Si can incorporate a limited volume of InAs in a form of small coherent clusters about 3 nm in diameter. If the deposited InAs layer exceeds a critical thickness, large dislocated InAs precipitates are formed during Si overgrowth accumulating the excess of InAs.

Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

1994 ◽  
Vol 357 ◽  
Author(s):  
Jie Yang ◽  
Zhangda Lin ◽  
Li-Xin Wang ◽  
Sing Jin ◽  
Ze Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Hot Filament

AbstractDiamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

High Resolution Transmission Electron Microscopy Investigation of the Defect Structure in CdMnTe Layers Grown on GaAs by MOCVD

1987 ◽  
Vol 102 ◽  
Author(s):  
J. H. Mazur ◽  
P. Grodzinski ◽  
A. Nouhi ◽  
R. J. Stirn
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Organic Chemical ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Resolution Electron

ABSTRACTElectron diffraction and high resolution electron microscopy were used for analysis of Cd1−xMnxTe films grown on (100)2°[011] GaAs substrates by metal organic chemical vapor deposition (MOCVD) at 420°C (x=O.3) and 450°C (x=0.5). It has been found that these two conditions produce dramatically different microstructures. Two orientation relationships of the epilayers with respect to the substrate were observed. It is suggested that this phenomenon may be related to GaAs substrate surface morphology.

Characterization of Carbon Nanofibers/ ZrO2 Ceramic Matrix Composite

2013 ◽  
Vol 58 (2) ◽  
pp. 459-463 ◽  
Author(s):  
A. Duszová ◽  
J. Morgiel ◽  
Z. Bastl ◽  
J. Mihály ◽  
J. Dusza
Keyword(s):  
Electron Microscopy ◽  
Ceramic Matrix Composite ◽  
Chemical Vapor ◽  
Average Diameter ◽  
High Resolution Electron Microscopy ◽  
Outer Diameter ◽  
Transmission Electron ◽  
Resolution Electron ◽  
The Matrix ◽  
20 Nm

Carbon micro/nanofibers prepared by catalytic chemical vapor deposition have been characterized in the form of powders and in the form of filaments, intercorporated in the matrix of ZrO2. Scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron spectroscopy for chemical analysis and Raman spectroscopy have been used. The outer diameter of the fibers varied from 50 nm to 600 nm with an average diameter of 120 nm, length from several micrometers to several tens of micrometers and inner diameters from 20 nm to 230 nm. Two types of fibers have been identified; cylindrical which consists of a distinct graphite layers parallel to the fiber axes and bamboo - shaped fibers with walls which are built from domains with different orientations of graphite layers. The fibers contain 99.05 at.% carbon and 0.95 at.% oxygen with a binding energy of O (1s) electrons of 532.7 e V which corresponds to carbon in C-O bonds. In the first-order Raman spectra, the position of the band G was found at 1600 cm-1 and D at 1282 cm-1. The CNFs in ZrO2 + CNFs composite have been relatively well dispersed, however clusters of CNFs together with porosity are present as a result of the difficulty of dispersing, too. TEM and HREM revealed that the CNFs are usually located at the grain boundaries of ZrO2 in the form of undamaged nanofibers or disordered graphite.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

High Resolution Transmission Electron Microscopy of an automobile catalytic converter

1990 ◽  
Vol 48 (4) ◽  
pp. 242-243
Author(s):  
Jan-Olle Malm ◽  
Jan-Olov Bovin
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Catalytic Converter ◽  
Active Material ◽  
Image Intensifier ◽  
High Resolution Electron Microscopy ◽  
Detailed Knowledge ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Atomic Surface

Understanding of catalytic processes requires detailed knowledge of the catalyst. As heterogeneous catalysis is a surface phenomena the understanding of the atomic surface structure of both the active material and the support material is of utmost importance. This work is a high resolution electron microscopy (HREM) study of different phases found in a used automobile catalytic converter.The high resolution micrographs were obtained with a JEM-4000EX working with a structural resolution better than 0.17 nm and equipped with a Gatan 622 TV-camera with an image intensifier. Some work (e.g. EDS-analysis and diffraction) was done with a JEM-2000FX equipped with a Link AN10000 EDX spectrometer. The catalytic converter in this study has been used under normal driving conditions for several years and has also been poisoned by using leaded fuel. To prepare the sample, parts of the monolith were crushed, dispersed in methanol and a drop of the dispersion was placed on the holey carbon grid.

Transmission electron microscopy observation in a liquid-phase-sintered SiC with oxynitride glass

2001 ◽  
Vol 16 (8) ◽  
pp. 2189-2191 ◽  
Author(s):  
Guo-Dong Zhan ◽  
Mamoru Mitomo ◽  
Young-Wook Kim ◽  
Rong-Jun Xie ◽  
Amiya K Mukherjee
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
High Resolution Electron Microscopy ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Sintering Additive ◽  
Transmission Electron ◽  
High Annealing ◽  
Resolution Electron ◽  
Oxynitride Glass

Using a pure α–SiC starting powder and an oxynitride glass composition from the Y–Mg–Si–Al–O–N system as a sintering additive, a powder mixture was hot-pressed at 1850 °C for 1 h under a pressure of 20 MPa and further annealed at 2000 °C for 4 h in a nitrogen atmosphere of 0.1 MPa. High-resolution electron microscopy and x-ray diffraction studies confirmed that a small amount of β–SiC was observed in the liquid-phase-sintered α–SiC with this oxynitride glass, indicating stability of β–SiC even at high annealing temperature, due to the nitrogen-containing liquid phase.

Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

1980 ◽  
Vol 2 ◽  
Author(s):  
Fernando A. Ponce
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Limit ◽  
High Concentration ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTThe structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

Structure, Composition and Stability of Heterophase Boundaries

1997 ◽  
Vol 3 (S2) ◽  
pp. 673-674
Author(s):  
M. Rühle ◽  
T. Wagner ◽  
S. Bernath ◽  
J. Plitzko ◽  
C. Scheu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Elevated Temperatures ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Advanced Materials ◽  
Bulk Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
The Stability

Heterophase boundaries play an important role in advanced materials since those materials often comprise different components. The properties of the materials depend strongly on the properties of the interface between the components. Thus, it is important to investigate the stability of the microstructure with respect to annealing at elevated temperatures. In this paper results will be presented on the structure and composition of the interfaces between Cu and (α -Al2O3. The interfaces were processed either by growing a thin Cu overlayer on α- Al2O3 in a molecular beam epitaxy (MBE) system or by diffusion bonding bulk crystals of the two constituents in an UHV chamber. To improve the adhesion of Cu to α -Al2O3 ultrathin Ti interlayers were deposited between Cu and α - Al2O3.Interfaces were characterized by different transmission electron microscopy (TEM) techniques. Quantitative high-resolution electron microscopy (QHRTEM) allows the determination of the structure (coordinates of atoms) while analytical electron microscopy (AEM) allows the determination of the composition with high spatial resolution.

Electron microscopy study of interfacial structure and reaction of Yba2Cu3O7/Y-ZrO2 films on LaAlO3 substrates

1998 ◽  
Vol 13 (6) ◽  
pp. 1485-1491 ◽  
Author(s):  
J. Y. Dai ◽  
F. H. Kaatz ◽  
P. R. Markworth ◽  
D. B. Buchholz ◽  
X. Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Reaction ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Interfacial Structure ◽  
Reaction Products ◽  
Transmission Electron

The detailed structure and interfacial reaction of epitaxial Yba2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO // [110]YSZ // [100]LAO and (001)YBCO // (001)YSZ // (001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.

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