Scanning probe metrology

1992 ◽  
Vol 50 (2) ◽  
pp. 1124-1125
Author(s):  
Joseph E. Griffith
Keyword(s):  
High Vacuum ◽  
Three Dimensions ◽  
Scanning Probe ◽  
Dimensional Metrology ◽  
Position Measurement ◽  
Lattice Constants ◽  
Measurement Tools ◽  
Tube Position ◽  
Probe Microscope ◽  
Electron Microscopes

Scanning probe microscopes have unusual advantages as measurement tools. They achieve high resolution simultaneously in all three dimensions, over almost any solid, in ambients ranging from high vacuum to fluid electrolytes. They offer the prospect of performing dimensional metrology at the atomic level with the calibration linked directly to crystal lattice constants. Application of these microscopes to measurement is not completely straightforward, however. As with optical and electron microscopes, accurate measurement is not possible without a thorough understanding of the instrument's properties. We discuss here two aspects of probe microscope behavior that affect position measurement because they exhibit strong nonlinearities.The piezo ceramic actuators commonly used to generate the probe motion are ferroelectric so they suffer from hysteresis and creep. Consequently, the probe motion must be independently monitored. We have adopted a capacitive scheme for monitoring the probe position in all three dimensions. This scheme allows the tube position to be measured to within 10 nm, though there are distortions caused by the tube bending that must be corrected.

Scanning probe microscope dimensional metrology at NIST

2010 ◽  
Vol 22 (2) ◽  
pp. 024001 ◽  
Author(s):  
John A Kramar ◽  
Ronald Dixson ◽  
Ndubuisi G Orji
Keyword(s):  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
Dimensional Metrology ◽  
Probe Microscope

High-precision calibration of a scanning-probe microscope (SPM) for manufacturing applications

1996 ◽  
Vol 54 ◽  
pp. 868-869
Author(s):  
Donald A. Chernoff ◽  
Jason D. Lohr ◽  
Douglas Hansen ◽  
Michael Lines
Keyword(s):  
Standard Deviation ◽  
Integrated Circuits ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
Measurement Tool ◽  
Critical Dimensions ◽  
Probe Microscope ◽  
Manufacturing Applications ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

Introduction. For ordinary SPM (Scanning Probe Microscope) work, accuracy of XYZ length measurements of about 5% is acceptable. This is accomplished by periodic calibration checks (and adjustments, if required). Measurement of critical dimensions such as feature width and spacing on integrated circuits or compact discs requires much higher accuracy. For example, the new DVD (digital video disc) standard calls for a mean track pitch of 740 nm with a maximum allowable jitter (range) of 30 nm. To achieve a range of 30 nm, the standard deviation should be 10 nm or less. According to the gage-maker's rule, the measurement tool should be 4x more precise than the object being measured, so we need a standard deviation of 2.5 nm. This report describes the combined use of a new type of calibration standard and new software to meet these requirements.Materials. Recently, MOXTEK has produced 1- and 2-dimensional holographic gratings as calibration standards for use with SEMs (Scanning Electron Microscopes).

Measuring the length of objects on scanning probe microscope images using curvature detectors

2021 ◽  
pp. 21-26
Author(s):  
Pavel V. Gulyaev
Keyword(s):  
Automatic Measurement ◽  
Surface Curvature ◽  
Scanning Probe ◽  
Test Image ◽  
Halftone Image ◽  
Geometric Figures ◽  
Curvature Analysis ◽  
Measurement Tools ◽  
Probe Microscope

The article is devoted to the automatic measurement of objects longitudinal dimensions on images obtained by probe microscopy. The solution of this problem can be relevant for quality control of microelectronics, nanotechnics products and materials. Existing tools for objects length measuring are compared by means of test image containing geometric figures with known dimensions. The advantages of software surface curvature detectors, intended for objects lengths measuring directly on a halftone image by forming the skeleton of an object with a surface curvature detector, are shown. A two-dimensional “Circle” detector, based on the curvature analysis of raster images line and column profilograms, was used for the measuring. The curvature was estimated based on the area of the figure bounded by the profilogram at a predefined interval. Features of measuring the length of objects using curvature maxima are considered. It is shown that the curvature detector allows to more accurately determine the lengths of objects with overlapping contours and a significant brightness range. Algorithms of the detector operation, formation of the object skeleton and determination of its length are described. The results of investigation confirming the performance of the presented algorithms are presented. Comparative analysis with existing length measurement tools, performed on magnetic disk domains and nanopolymer fibers images, showed a more correct detector operation in sceletonization of object and measuring its length.

Investigation of Ni-Al Intermetallic Thin Films

2020 ◽  
Vol 854 ◽  
pp. 140-147
Author(s):  
Vladimir N. Malikov ◽  
Alexey V. Ishkov ◽  
Alexey A. Grigorev ◽  
Denis A. Fadeev ◽  
Mihail A. Ryasnoi
Keyword(s):  
Electrical Conductivity ◽  
Ultrathin Films ◽  
Thermal Evaporation ◽  
High Vacuum ◽  
Optical Microscope ◽  
Scanning Probe ◽  
Kinetic Characteristics ◽  
Film Sample ◽  
Thermal Evaporation Method ◽  
Probe Microscope

The article describes the results of studies of Ni-Al ultrathin films obtained by the resistive thermal evaporation method and having the characteristic dimensions of islands of 700-1000 nm with a film thickness of about 500 nm. This paper presents a method of obtaining a film using a unit for creating high vacuum and the subsequent deposition of the film. The obtained film sample was studied using an optical microscope, a scanning probe microscope and a Fourier analyzer. The kinetic characteristics of the film, the film relief, and the characteristic dimensions of the islands were established; the search for regularities in the island structure of films was carried out and its electrical conductivity was determined.

scholarly journals Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

2015 ◽  
Vol 6 ◽  
pp. 2485-2497 ◽  
Author(s):  
Urs Gysin ◽  
Thilo Glatzel ◽  
Thomas Schmölzer ◽  
Adolf Schöner ◽  
Sergey Reshanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrostatic Force ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Electrostatic Force Microscopy ◽  
Kelvin Probe ◽  
Large Area ◽  
Force Microscopy ◽  
Probe Microscope

Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip–sample interface for optically excited measurements such as local surface photo voltage detection. Results: We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.

Sign in / Sign up

Export Citation Format

Share Document