III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

1990 ◽  
Vol 01 (03n04) ◽  
pp. 245-301 ◽  
Author(s):  
M.F. CHANG ◽  
P.M. ASBECK
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Growth Parameters ◽  
Bipolar Transistors ◽  
System Requirements ◽  
Potential Impact ◽  
Computational Systems ◽  
Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

Implant-induced strain-relaxation in SiGe/Si layers

1993 ◽  
Vol 51 ◽  
pp. 1112-1113
Author(s):  
N. David Theodore ◽  
Gordon Tam
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Strain Relaxation ◽  
Base Material ◽  
Sige Layer ◽  
Bipolar Transistors ◽  
Leakage Currents ◽  
Extrinsic Base

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. SiGe is typically used as an epitaxial base material in HBTs. To obtain extremely high-performance bipolar-transistors it is necessary to reduce the extrinsic base-resistance. This can be done by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however with the use of implantation is that blanket implants have been found to enhance strain-relaxation of SiGe/Si. Strain relaxation will cause the bandgap-difference between Si and SiGe to decrease; this difference is maximum for a strained SiGe layer. The electrical benefits of using SiGe/Si arise largely from the presence of a significant bandgap-difference across the SiGe/Si interface. Strain relaxation reduces this benefit. Furthermore, once misfit or threading dislocations result (during strain-relaxation), the defects can give rise to recombination-generation in depletion regions of the device; high electrical leakage currents result.

ULTRAHIGH fmax AlInAs/GaInAs TRANSFERRED-SUBSTRATE HETEROJUNCTION BIPOLAR TRANSISTORS FOR INTEGRATED CIRCUITS APPLICATIONS

1998 ◽  
Vol 09 (02) ◽  
pp. 643-670 ◽  
Author(s):  
BIPUL AGARWAL ◽  
RAJASEKHAR PULLELA ◽  
UDDALAK BHATTACHARYA ◽  
DINO MENSA ◽  
QING-HUNG LEE ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Bipolar Transistors ◽  
Fabrication Process ◽  
Material System ◽  
Rf Performance ◽  
Consequent Increase ◽  
Very High

Transferred-substrate heterojunction bipolar transistors (HBTs) have demonstrated very high bandwidths and are potential candidates for very high speed integrated circuit (IC) applications. The transferred-substrate process permits fabrication of narrow and aligned emitter-base and collector-base junctions, reducing the collector-base capacitance and increasing the device f max . Unlike conventional double-mesa HBTs, transferred-substrate HBTs can be scaled to submicron dimensions with a consequent increase in bandwidth. This paper introduces the concept of transferred-substrate HBTs. Fabrication process in the AlInAs/GaInAs material system is presented, followed by DC and RF performance. A demonstration IC is shown along with some integrated circuits in development.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density

2003 ◽  
Vol 3 (2) ◽  
pp. 31-38 ◽  
Author(s):  
J.-S. Rieh ◽  
K.M. Watson ◽  
F. Guarin ◽  
Zhijian Yang ◽  
Ping-Chuan Wang ◽  
...  
Keyword(s):  
Current Density ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Forward Current ◽  
Very High

GaAs-based heterojunction bipolar transistors for very high performance electronic circuits

1993 ◽  
Vol 81 (12) ◽  
pp. 1709-1726 ◽  
Author(s):  
P.M. Asbeck ◽  
F.M.-C. Chang ◽  
K.-C. Wang ◽  
G.J. Sullivan ◽  
D.T. Cheung
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Bipolar Transistors ◽  
Electronic Circuits ◽  
Very High

SiGe Heterojunction Bipolar Transistors

1991 ◽  
Vol 220 ◽  
Author(s):  
Maurizio Arienzo ◽  
James H. Comfort ◽  
Emmanuel F. Crabbé ◽  
David L. Marame ◽  
Subramanian S. Iyer ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Layer Growth ◽  
Bipolar Transistors ◽  
Ultra High Vacuum ◽  
Ring Oscillator ◽  
Trade Offs

ABSTRACTStrained layer growth of SiGe on Si by either Molecular Beam Epitaxy (MBE) or various methods of Chemical Vapor Deposition (CVD), including Limited Reaction Processing (LRP) and Ultra High Vacuum CVD (UHV/CVD) have been used to realize narrow bandgap base double heterojunction bipolar transistors (HBTs). This review paper will focus on the fabrication of high performance transistors, and on the material and process challenges facing the implementation of SiGe HBT technology. In particular, the use of SiGe alloys for bandgap engineering of bipolar devices and the development of self-aligned, epitaxial base bipolar device structures will be discussed, including the most recent accomplishment of 75 GHz ƒr heterojunction bipolar transistors, and the record sub-25 ps EC L ring oscillator delay. The design flexibility and trade-offs offered by SiGe heterojunction technology, like junction field/capacitance control, liquid nitrogen operation and complementary processes, arc also reviewed, to assess the leverage of a SiGe base bipolar technology in high speed circuits.

scholarly journals Evaluation of Meshed Reference Planes for High Performance Applications

2000 ◽  
Vol 22 (3) ◽  
pp. 175-187 ◽  
Author(s):  
N. D. Codreanu ◽  
P. Svasta ◽  
V. Golumbeanu ◽  
L. Gál
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Network Analyzer ◽  
High Frequencies ◽  
High Speeds ◽  
University Of Budapest ◽  
Very High Frequencies ◽  
Very High

The actual generations of integrated circuits are characterized, inter alia, by very high frequencies or very high speeds. The dramatic evolution ofthe semiconductor's technology establishes a greater “pressure” to the design and the manufacturing of the passive interconnection structure from PCB/MCM electronic modules. In these conditions the reference planes (power and ground planes) have a more and more important contribution. The paper intents to present the effect of different configuration reference planes on the characteristics of the high speed/high frequency interconnection lines. The first part deals with modeling and simulation of usual practical interconnection geometries. A computer modeling of meshed structures was realized and Spice models for a good compatibility with circuit simulators were obtained.S-,Y-,Z- parameters and radiation patterns were calculated, too. The second part contains measurements made by a vector network analyzer as regards to different practical configurations manufactured at Technical University of Budapest.

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