Plug-in scripts for EFTEM automation

1996 ◽  
Vol 54 ◽  
pp. 546-547
Author(s):  
N. D. Evans ◽  
M. K. Kundmann
Keyword(s):  
Electron Microscopy ◽  
National Laboratory ◽  
Oak Ridge ◽  
Multiple User ◽  
Transmission Electron ◽  
Short Period ◽  
User Facility ◽  
Instrument Control ◽  
And Control ◽  
Research Equipment

Post-column energy-filtered transmission electron microscopy (EFTEM) is inherently challenging as it requires the researcher to setup, align, and control both the microscope and the energy-filter. The software behind an EFTEM system is therefore critical to efficient, day-to-day application of this technique. This is particularly the case in a multiple-user environment such as at the Shared Research Equipment (SHaRE) User Facility at Oak Ridge National Laboratory. Here, visiting researchers, who may oe unfamiliar with the details of EFTEM, need to accomplish as much as possible in a relatively short period of time.We describe here our work in extending the base software of a commercially available EFTEM system in order to automate and streamline particular EFTEM tasks. The EFTEM system used is a Philips CM30 fitted with a Gatan Imaging Filter (GIF). The base software supplied with this system consists primarily of two Macintosh programs and a collection of add-ons (plug-ins) which provide instrument control, imaging, and data analysis facilities needed to perform EFTEM.

THE DEPOSITION AND CONTROL OF SELF ASSEMBLED SILICON NANO ISLANDS ON CRYSTALLINE SILICON

2008 ◽  
Vol 18 (04) ◽  
pp. 901-910
Author(s):  
RAGNAR KIEBACH ◽  
ZHENRUI YU ◽  
MARIANO ACEVES-MIJARES ◽  
DONGCAI BIAN ◽  
JINHUI DU
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuit ◽  
Crystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Density ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
And Control ◽  
Circuit Technology

The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO 2 matrix and Si nano islands ( Si nI ) at c-Si /SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs . High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology.

The Formation and Control of Laves Phase in K418 and 42CrMo Dissimilar Metal Laser Weld

2012 ◽  
Vol 166-169 ◽  
pp. 1839-1842 ◽  
Author(s):  
Ming Pang ◽  
Chang Zhen Liu ◽  
Guang Hui Xu ◽  
Jun Hua Ma
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Post Weld Heat Treatment ◽  
Laves Phase ◽  
Laser Weld ◽  
Dissimilar Metal ◽  
Weld Metals ◽  
Transmission Electron ◽  
And Control ◽  
Weld Heat

The effect of K418 and 42CrMo dissimilar metal laser welding velocity, temperature of post-weld heat treatment on controlling formation of laves phase were investigated. Microstructure and laves phase were characterized by optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM).Results showed that Laves phase formed in the interdendritic regions of the weld metals as a result of segregation. The morphology and composition of Laves phase depended strongly on heat input/cooling rate and influenced its response to subsequent homogenization post-weld heat treatment.

scholarly journals Shared Research Equipment at OAK Ridge National Laboratory

1998 ◽  
Vol 4 (S2) ◽  
pp. 470-471
Author(s):  
N. D. Evans ◽  
E. A. Kenik ◽  
M. K. Miller
Keyword(s):  
Semiconductor Device ◽  
National Laboratory ◽  
Atomic Scale ◽  
Fiscal Year ◽  
Probe Field ◽  
Oak Ridge ◽  
Wide Range ◽  
Oak Ridge National Laboratory ◽  
Electron Microscopes ◽  
Research Equipment

The Shared Research Equipment (SHaRE) User Facility and Program at Oak Ridge National Laboratory (ORNL) provides microanalytical facilities for studies within the materials sciences. Available instrumentation includes advanced analytical electron microscopes, atom probe field ion microscopes, and nanoindentation facilities. Through SHaRE, researchers from U.S. universities, industries, and government laboratories may collaborate with Facility scientists to perform research not possible at their home institutions. International collaborations are also possible. Most SHaRE projects seek correlations at the microscopic or atomic scale between structure and properties in a wide range of metallic, ceramic, and other structural materials. Typical research projects include studies of magnetic materials, advanced alloys, catalysts, semiconductor device materials, high Tc superconductors, and surface-modified polymers. Projects usually involve one or more external researchers visiting the SHaRE Facility for up to three weeks during the fiscal year (October 1 - September 30). Project approval is based upon the scientific excellence and relevance of proposed collaborative research.

Characterization of Multilayer Thin Film Structures for Gas Sensor Applications

1995 ◽  
Vol 382 ◽  
Author(s):  
M. Dibattista ◽  
S. V. Patel ◽  
K. D. Wise ◽  
J. L. Gland ◽  
J. F. Mansfield ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gas Sensor ◽  
Environmental Scanning Electron Microscopy ◽  
Environmental Scanning ◽  
Sensing Properties ◽  
Force Microscopy ◽  
Sensor Applications ◽  
Transmission Electron ◽  
Silicon Based ◽  
And Control

ABSTRACTA nicrofabricated silicon-based chemical gas sensor with a discontinuous film of Pt / TiOx, as the active sensing component has been characterized by atomic force microscopy, environmental scanning electron microscopy, and transmission electron microscopy. A study of the device's multilayer structure and of the thin sensing film is undertaken to understand and control the sensing properties of the metal / semiconducting materials. The purpose of this research is to advance the understanding of the conduction mechanism and provide a basis for optimizing the sensing properties and microstructure of the sensing device.

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

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