THE DEPOSITION AND CONTROL OF SELF ASSEMBLED SILICON NANO ISLANDS ON CRYSTALLINE SILICON

2008 ◽  
Vol 18 (04) ◽  
pp. 901-910
Author(s):  
RAGNAR KIEBACH ◽  
ZHENRUI YU ◽  
MARIANO ACEVES-MIJARES ◽  
DONGCAI BIAN ◽  
JINHUI DU
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuit ◽  
Crystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Density ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
And Control ◽  
Circuit Technology

The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO 2 matrix and Si nano islands ( Si nI ) at c-Si /SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs . High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

Fabrication of Nanotwinned Surface on a Nickel Alloy Using a Developed Diamond Panel with Tips Array

2016 ◽  
Vol 874 ◽  
pp. 3-8
Author(s):  
Bo Wang ◽  
Zhen Yu Zhang ◽  
Neng Dong Duan ◽  
Ji Lei Lyu ◽  
Guo Xin Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Nickel Alloy ◽  
Vapor Deposition ◽  
Material Removal ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Chemical Reagents ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
High Temperature High Pressure

In this study, nanotwinned surface is fabricated on a Nickel alloy by means of a developed diamond panel with tips array. The diamond panel has an area of 10×10 mm2, and is grown using microwave chemical vapor deposition. The diamond tips are submicron in radius and formed on a silicon substrate with an array full of uniformed inverted pyramid pits. The nanotwinned surface is produced under the pressure of 1 MPa exerted by the diamond panel with tips array. Nanotwins are confirmed using transmission electron microscopy. The nanotwinned surface is generated by indention of diamond panel at room temperature using mechanical force, neither material removal nor chemical reagents. This is different from previous reports, in which high temperature, high pressure, chemical reagents or vacuum conditions are employed usually.

SiGe Nanowires Grown by LPCVD: Morphological and Structural Analysis

2010 ◽  
Vol 1258 ◽  
Author(s):  
Andrés Rodríguez ◽  
Jesús Sangrador ◽  
Tomás Rodríguez ◽  
Carmen Ballesteros ◽  
Carmelo Prieto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Chemical Vapor Deposition Reactor ◽  
X Ray ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Scanning Electron

AbstractSiGe nanowires were grown by the vapor-liquid-solid method using a low pressure chemical vapor deposition reactor and different flows of the GeH4 and Si2H6 gas precursors. The morphology of the nanowires was studied by field emission scanning electron microscopy, and the length, diameter and density of nanowires were determined. Their structure and crystallinity were analyzed by transmission electron microscopy and its related techniques. Energy dispersive X-ray emission of individual nanowires as well a Raman spectroscopy were used to determine their composition and to analyze its homogeneity.

scholarly journals Grain Structure and Growth of Dispersed Phase BN-AlN Coatings Grown via Chemical Vapor Deposition

1990 ◽  
Vol 202 ◽  
Author(s):  
Garth B. Freeman ◽  
Woo Y. Lee ◽  
W. J. Lackey ◽  
John A. Hanigofsky ◽  
Karren More
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Ceramic Coatings ◽  
Grain Structure ◽  
Dispersed Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThis paper discusses the variation in microstructures encountered during the separate depositions of boron nitride (BN) and aluminum nitride (A1N) as well as during the codeposition of BNߝA1N dispersed phase ceramic coatings. This combination was chosen in order to take advantage of the self lubricating properties of hexagonal BN along with the hard, erosion resistance of A1N. Films were characterized using scanning and transmission electron microscopy (SEM and TEM), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD).A range of coating microstructures are possible depending on the conditions of deposition. The best films produced, in terms of hardness, density, and tenacity, were a fine mixture of turbostratic BN and preferentially oriented A1N whiskers aligned with the whisker axis perpendicular to the substrate surface as seen by both electron microscopy and x-ray diffraction.

Morphology, structure and optical properties of MOCVD grown pseudo-binary alloy nanowires of Zn1-xCdxSe on Si and GaAs substrates

2005 ◽  
Vol 876 ◽  
Author(s):  
C. M. Ng ◽  
C. X. Shan ◽  
Z. Liu ◽  
S. K. Hark
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Binary Alloy ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Stable Form ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Alloy Nanowires

AbstractLong and fine Zn1-xCdxSe pseudo-binary alloy nanowires of various compositions x covering the entire range were grown by metalorganic chemical vapor deposition, using diethlyzinc, dimethylcadmium and diisopropylselenide as precursors, on Si (100) and GaAs (100) substrates; sputtered gold was used as a catalyst to promote nanowire formation. By controlling the ratio of the flows of the precursors, the temperature and the pressure during growth, we obtained nanowires of desired compositions. The morphology, structure and optical properties of the nanowires were studied by various techniques, including secondary electron microscopy, atomic force microscopy, transmission electron microscopy, X-ray diffraction, photoluminescence, and Raman scattering. Depending on the substrate, composition and conditions of growth, either the zincblende or wurtzite nanowires were obtained. At compositions where the stable form would have been normally wurtzite, the zincblende form could be obtained under certain growth conditions. From the orientations of the ordered nanowires on the substrate surface, their directions of growth were deduced and confirmed by high resolution lattice imaging. The relationship between the band gap and the composition of the nanowires were measured and found to deviate from that of bulk alloys and epilayers. The interplay between the growth conditions and compositions and morphology of the nanowires are discussed.

High Resolution Transmission Electron Microscopy Investigation of the Defect Structure in CdMnTe Layers Grown on GaAs by MOCVD

1987 ◽  
Vol 102 ◽  
Author(s):  
J. H. Mazur ◽  
P. Grodzinski ◽  
A. Nouhi ◽  
R. J. Stirn
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Organic Chemical ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Resolution Electron

ABSTRACTElectron diffraction and high resolution electron microscopy were used for analysis of Cd1−xMnxTe films grown on (100)2°[011] GaAs substrates by metal organic chemical vapor deposition (MOCVD) at 420°C (x=O.3) and 450°C (x=0.5). It has been found that these two conditions produce dramatically different microstructures. Two orientation relationships of the epilayers with respect to the substrate were observed. It is suggested that this phenomenon may be related to GaAs substrate surface morphology.

scholarly journals Elasticity of Cross-Linked Titania Nanocrystal Assemblies Probed by AFM-Bulge Tests

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1230 ◽  
Author(s):  
Hensel ◽  
Schröter ◽  
Schlicke ◽  
Schulz ◽  
Riekeberg ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Edge Length ◽  
Film Deposition ◽  
Layer By Layer ◽  
Functional Coatings ◽  
Transmission Electron ◽  
Dodecanedioic Acid ◽  
And Control

In order to enable advanced technological applications of nanocrystal composites, e.g., as functional coatings and layers in flexible optics and electronics, it is necessary to understand and control their mechanical properties. The objective of this study was to show how the elasticity of such composites depends on the nanocrystals’ dimensionality. To this end, thin films of titania nanodots (TNDs; diameter: ~3–7 nm), nanorods (TNRs; diameter: ~3.4 nm; length: ~29 nm), and nanoplates (TNPs; thickness: ~6 nm; edge length: ~34 nm) were assembled via layer-by-layer spin-coating. 1,12-dodecanedioic acid (12DAC) was added to cross-link the nanocrystals and to enable regular film deposition. The optical attenuation coefficients of the films were determined by ultraviolet/visible (UV/vis) absorbance measurements, revealing much lower values than those known for titania films prepared via chemical vapor deposition (CVD). Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images showed a homogeneous coverage of the substrates on the µm-scale but a highly disordered arrangement of nanocrystals on the nm-scale. X-ray photoelectron spectroscopy (XPS) analyses confirmed the presence of the 12DAC cross-linker after film fabrication. After transferring the films onto silicon substrates featuring circular apertures (diameter: 32–111 µm), freestanding membranes (thickness: 20–42 nm) were obtained and subjected to atomic force microscopy bulge tests (AFM-bulge tests). These measurements revealed increasing elastic moduli with increasing dimensionality of the nanocrystals, i.e., 2.57 ± 0.18 GPa for the TND films, 5.22 ± 0.39 GPa for the TNR films, and 7.21 ± 1.04 GPa for the TNP films.

Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °C

1991 ◽  
Vol 6 (1) ◽  
pp. 5-7 ◽  
Author(s):  
Roy G. Gordon ◽  
David M. Hoffman ◽  
Umar Riaz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Rutherford Backscattering ◽  
Transmission Electron ◽  
Pressure Chemical

The atmospheric pressure chemical vapor deposition of aluminum nitride coatings using hexakis(dimethylamido)dialuminum, Al2(NMe2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. The films were deposited at 200–250 °C with growth rates up to 1000 Å/min. They displayed good adhesion to silicon, vitreous carbon, and glass substrates and were chemically inert, except to concentrated hydrofluoric acid. Rutherford backscattering analysis showed that the N/Al ratio ranged from 1.1 to 1.2. Refractive indexes were 1.8–1.9. The films were smooth and amorphous by transmission electron microscopy.

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