Influence of thermal expansion on the lattice parameter of silicon
Keyword(s):
Considering the thermal expansion of silicon at ambient conditions, the lattice parameter will change 0.00032 Å for a 10 °C range. This range is measurable with modern diffraction instrumentation illustrating the importance of knowing the accurate lattice parameter, the temperature of measurement, and the thermal expansion coefficient. The best value for the expansion coefficient is 2.45×10−6/°C.
2016 ◽
Vol 44
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pp. 287-296
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1998 ◽
Vol 54
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pp. 741-749
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2013 ◽
Vol 27
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pp. 1350180
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2006 ◽
Vol 407
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pp. 263-267
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