The Effect of -Cyclodextrin Inclusion on the Morphology of [Ru(bpy)2Cl(BPEB)](PF6) Films by Scanning Force Microscopy

2005 ◽  
Vol 11 (S03) ◽  
pp. 142-145
Author(s):  
S. H. Toma ◽  
M. Nakamura ◽  
H. E. Toma
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Force Microscopy ◽  
Recognition Site ◽  
Van Der Waals Interactions ◽  
Scanning Probe ◽  
Guest Molecules ◽  
Force Microscopy ◽  
Scanning Force ◽  
Great Relevance ◽  
Macrocyclic Molecules

Molecular level organization has been a subject of great relevance in supramolecular chemistry and nanotechnology. Supramolecular chemists count on the ability of molecules to form several kinds of organization, allowing the development of nanoscaled devices. In this way, the scanning probe microscopy provides a great tool for characterization, manipulation and interfacing such devices [1]. Regarding the ruthenium complexes [Ru(bpy)2Cl(BPEB)](PF6) and {[Ru(bpy)2Cl]2(BPEB)}(PF6)2, where bpy = 2,2'-bipyridine, the presence of the BPEB (1,4-bis[4-pyridyl)ethenyl]benzene) ligand has an important role as a recognition site for van der Waals interactions (Figure 1). On the other hand, cyclodextrins are macrocyclic molecules bearing a hydrophobic cavity that can support several types of guest molecules [2-3]. In this work we are showing the influence of the recognition site of the BPEB ligand and the formation of an inclusion compound in the patterning structures of films deposited over mica substrates, by SFM microscopy.

scholarly journals The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal
Keyword(s):  
Memory Effect ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Versatile Tool ◽  
Scanning Force ◽  
Memristor Device

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

scholarly journals Nanomechanical Probing With Scanning Force Microscopy

2001 ◽  
Vol 9 (1) ◽  
pp. 8-15 ◽  
Author(s):  
V. V. Tsukruk ◽  
V. V. Gorbunov
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Static Force ◽  
Local Surface ◽  
Materials Properties ◽  
Force Microscopy ◽  
Nanomechanical Properties ◽  
Scanning Force ◽  
Magnetic And Electric Properties

Highly localized probing of surface nanomechanical properties with a submicron resolution can be accomplished with scanning probe microscopy (SPM). The SPM ability to probe local surface topography in conjunction with mechanical, adhesive, friction, thermal, magnetic, and electric properties is unique.1 However, the quantitative probing of the nanomechanical materials properties is still a challenge and only a few examples have been published to date.In this note, we briefly review the latest developments in the nanomechanical probing of compliant materials (predominantly polymers). We solely focus our analysis of SPM-based approach in a so-called static force spectroscopy (SFS) mode.

Ferroelectric Domain Engineering in Stoichiometric LiNbO3 by Scanning Probe Microscopy

2012 ◽  
Vol 485 ◽  
pp. 510-513
Author(s):  
Hui Feng Bo ◽  
Zhan Xin Zhang ◽  
Hong Kui Hu ◽  
Ru Zheng Wang
Keyword(s):  
Lithium Niobate ◽  
Scanning Probe Microscopy ◽  
Pulse Width ◽  
Scanning Force Microscopy ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Scanning Probe ◽  
Feature Size ◽  
Force Microscopy ◽  
Scanning Force

Scanning force microscopy is used to investigate nanoscale ferroelectric domain engineering in near-stoichiometric lithium niobate (SLN) single crystals. The topography of the SLN single crystal was studied after polished to about 10 micron thickness. Dot patterns of the domain structure were fabricated by applying positive DC voltages of magnitude form 80 to 100 V with different pulse width from 0.5 to 20 s. The dot nanodomains of radius down to 200 nm were fabricated. With the increase of the magnitude of voltage and pulse width, feature size of switched domains increased to 940 nm.

scholarly journals Scanning Probe Microscopy in Materials Science

MRS Bulletin ◽  
2004 ◽  
Vol 29 (7) ◽  
pp. 443-448 ◽  
Author(s):  
Ernst Meyer ◽  
Suzanne P. Jarvis ◽  
Nicholas D. Spencer
Keyword(s):  
Scanning Probe Microscopy ◽  
Materials Science ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Aqueous Environment ◽  
Probe Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Force ◽  
Made In

AbstractThis brief article introduces the July 2004 issue of MRS Bulletin, focusing on Scanning Probe Microscopy in Materials Science.Those application areas of scanning probe microscopy (SPM) in which the most impact has been made in recent years are covered in the articles in this theme.They include polymers and semiconductors, where scanning force microscopy is now virtually a standard characterization method; magnetism, where magnetic force microscopy has served both as a routine analytical approach and a method for fundamental studies;tribology, where friction force microscopy has opened entirely new vistas of investigation;biological materials, where atomic force microscopy in an aqueous environment allows biosystems to be imaged and measured in a native (or near-native) state;and nanostructured materials, where SPM has often been the only approach capable of elucidating nanostructures.

Contactless Voltage and Current Contrast Imaging with Scanning Force Microscope Based Test Systems

2000 ◽  
Author(s):  
W. Mertin ◽  
S.-W. Bae ◽  
U. Behnke ◽  
R. Weber ◽  
E. Kubalek
Keyword(s):  
Integrated Circuits ◽  
Spatial Resolution ◽  
State Of The Art ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Contrast Imaging ◽  
Scanning Force Microscope ◽  
Force Microscopy ◽  
Scanning Force ◽  
Electric Signals

Abstract Significant improvements in the performance of modern integrated circuits (ICs) require also an increase of the performance of the used circuit internal test techniques regarding bandwidth, spatial resolution, and sensitivity. Due to its outstanding lateral and vertical spatial resolution in the nanometer regime scanning force microscopy (SFM) based on scanning probe microscopes is well suited for the investigation of very small structures. Furthermore it has been demonstrated that with SFM also electric signals can be contactless tested. This feature can be used for a circuit internal failure analysis of ICs. In this paper principles, examples, and the state-of-the-art of voltage and current measurement based on SFM will be presented.

Learning the core ideas of scanning probe microscopy by toy model inquiries

2013 ◽  
Vol 2 (2) ◽  
pp. 229-239 ◽  
Author(s):  
Anssi Lindell ◽  
Anna-Leena Kähkönen
Keyword(s):  
Scanning Probe Microscopy ◽  
Large Family ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Laboratory Unit ◽  
Probe Microscopy ◽  
Force Microscopy ◽  
The Core ◽  
Atomic Force ◽  
Probe Calibration

AbstractAtomic force microscopy has developed from an atomic level imaging technique to a large family of nanoscientific research setups called scanning probe microscopy. Following this trend, we also need to develop our education from instructions to use the instrument for imaging into an approach of deeper understanding of the science behind the technologies. In this article, we describe our new university level scanning probe microscopy laboratory unit to learn the main scientific principles and applications of the instruments. Three inquiries using toy models were designed to cover the core ideas of scanning probe microscopy. Learning outcomes were analyzed and categorized into levels from the research reports of nine students. We found that practically every student learned atomic force imaging basics: scanning and essential properties of the topography image. One-third of the students showed good understanding in image artifacts and probe calibration, but just one of the students reached the level beyond the topography images to scanning force microscopy and combined force and topography techniques in his report. Also, the connection between scanning probe techniques and human senses was considered an important objective in design of this laboratory unit, although with modest success in learning so far.

Classification of Scanning Probe Microscopies

1999 ◽  
Vol 71 (7) ◽  
pp. 1337-1357 ◽  
Author(s):  
Gernot Friedbacher ◽  
Harald Fuchs
Keyword(s):  
Rapid Development ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
New Techniques ◽  
Force Microscopy ◽  
Research Fields ◽  
Scanning Force ◽  
Microscopy Techniques

In the last few years scanning probe microscopy techniques have gained significant importance in a variety of different research fields in science and technology. A rapid development, stimulated by the invention of the scanning tunneling microscope in 1981 and still proceeding at a high pace, has brought about a number of new techniques belonging to this group of surface analytical methods. The large potential of scanning probe microscopes is documented by over 1000 publications per year. Due to the fact that a number of different terms and acronyms exist, which are partially used for identical techniques and which are sometimes confusing, this article is aimed at classification and at an overview on the analytically most important techniques with clarification of common terms. Emphasis will be put on analytical evaluation of scanning tunneling and scanning force microscopy, as up to now these techniques have gained the highest importance for analytical applications.

The SPM Study of Surface Healing Due to Mass Transport in the Liquidlike Layer of Ice

1998 ◽  
Vol 4 (S2) ◽  
pp. 322-323
Author(s):  
D. M. Trickett ◽  
V. F. Petrenko
Keyword(s):  
Mass Transport ◽  
Scanning Probe Microscopy ◽  
Healing Rate ◽  
Crystal Surface ◽  
Scanning Force Microscopy ◽  
Physical Parameters ◽  
Force Microscopy ◽  
Ice Surface ◽  
Rapid Healing ◽  
Scanning Force

This work employed scanning probe microscopy (SPM) to study mass transport in the liquid-like layer (LLL) ice surfaces. Rapid healing of the damaged ice surface that took place only in the presence of the LLL was recently observed. This indicates that the LLL is responsible for the surface healing. Simple modeling shows that the healing rate is proportional to the LLL thickness cubed and inversely proportional to the film's viscosity. Thus an experimental study of the healing can provide valuable information on the physical parameters of the LLL.Pure distilled deionized water, with a specific resistivity of 18.1 MΩ•cm, was used to grow ice crystals. The crystal surface was then prepared for scanning force microscopy (SFM) by either flattening using a microtome machine or flattening with the microtome machine and polishing gently using optically smooth clean quartz plates.

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

Log-log scale roughness spectroscopy of surfaces

1993 ◽  
Vol 51 ◽  
pp. 224-225
Author(s):  
P. Fraundorf ◽  
B. Armbruster
Keyword(s):  
Power Spectrum ◽  
Autocorrelation Function ◽  
Power Spectra ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Scanning Force ◽  
Lateral Structure ◽  
Scale Roughness

Optical interferometry, confocal light microscopy, stereopair scanning electron microscopy, scanning tunneling microscopy, and scanning force microscopy, can produce topographic images of surfaces on size scales reaching from centimeters to Angstroms. Second moment (height variance) statistics of surface topography can be very helpful in quantifying “visually suggested” differences from one surface to the next. The two most common methods for displaying this information are the Fourier power spectrum and its direct space transform, the autocorrelation function or interferogram. Unfortunately, for a surface exhibiting lateral structure over several orders of magnitude in size, both the power spectrum and the autocorrelation function will find most of the information they contain pressed into the plot’s origin. This suggests that we plot power in units of LOG(frequency)≡-LOG(period), but rather than add this logarithmic constraint as another element of abstraction to the analysis of power spectra, we further recommend a shift in paradigm.

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