scholarly journals TEM investigation of MoSeC films

2008 ◽  
Vol 14 (S3) ◽  
pp. 7-10 ◽  
Author(s):  
C. Silviu Sandu ◽  
Tomas Polcar ◽  
Albano Cavaleiro
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Magnetron Sputtering ◽  
Transition Metal Dichalcogenides ◽  
Deposition Method ◽  
Practical Applications ◽  
Mechanical And Tribological Properties ◽  
Lubricating Material ◽  
Metal Dichalcogenides ◽  
Contact Pressures

Transition metal dichalcogenides (TMD) are widely used as self-lubricating material either as oil additive or directly as thin films. Magnetron sputtering is a deposition method allowing depositing such films with high density and adhesion. However, their spread use in practical applications is still hindered since their excellent sliding properties are deteriorated in the presence of humidity and under high contact pressures. MoSe2, one of the members of TMD family recently studied, has been co-sputtered with carbon in order to improve the mechanical and tribological properties when compared to pure MoSe2 films.

Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Anh Tuan Hoang ◽  
Kairui Qu ◽  
Xiang Chen ◽  
Jong-Hyun Ahn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Wafer Scale ◽  
Metal Dichalcogenides ◽  
Device Applications

This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition and solution-based methods and various device applications.

scholarly journals Computational Study of the Curvature-Promoted Anchoring of Transition Metals for Water Splitting

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3173
Author(s):  
Weiwei Liu ◽  
Youchao Kong ◽  
Bo Wang ◽  
Xiaoshuang Li ◽  
Pengfei Liu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Water Splitting ◽  
Computational Study ◽  
Transition Metal Dichalcogenides ◽  
Single Atom ◽  
Potential Candidate ◽  
Practical Applications ◽  
Small Areas ◽  
Transition Metal Atoms ◽  
Metal Dichalcogenides

Generating clean and sustainable hydrogen from water splitting processes represent a practical alternative to solve the energy crisis. Ultrathin two-dimensional materials exhibit attractive properties as catalysts for hydrogen production owing to their large surface-to-volume ratios and effective chemisorption sites. However, the catalytically inactive surfaces of the transition metal dichalcogenides (TMD) possess merely small areas of active chemical sites on the edge, thus decreasing their possibilities for practical applications. Here, we propose a new class of out-of-plane deformed TMD (cTMD) monolayer to anchor transition metal atoms for the activation of the inert surface. The calculated adsorption energy of metals (e.g., Pt) on curved MoS2 (cMoS2) can be greatly decreased by 72% via adding external compressions, compared to the basal plane. The enlarged diffusion barrier energy indicates that cMoS2 with an enhanced fixation of metals could be a potential candidate as a single atom catalyst (SAC). We made a well-rounded assessment of the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER), which are two key processes in water splitting. The optimized Gibbs free energy of 0.02 for HER and low overpotential of 0.40 V for OER can be achieved when the proper compression and supported metals are selected. Our computational results provide inspiration and guidance towards the experimental design of TMD-based SACs.

scholarly journals All-optical nonreciprocity due to valley polarization pumping in transition metal dichalcogenides

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Sriram Guddala ◽  
Yuma Kawaguchi ◽  
Filipp Komissarenko ◽  
Svetlana Kiriushechkina ◽  
Anton Vakulenko ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Vital Role ◽  
Practical Applications ◽  
Propagation Of Light ◽  
Intervalley Scattering ◽  
All Optical ◽  
Valley Polarization ◽  
Metal Dichalcogenides ◽  
Pass Through

AbstractNonreciprocity and nonreciprocal optical devices play a vital role in modern photonic technologies by enforcing one-way propagation of light. Here, we demonstrate an all-optical approach to nonreciprocity based on valley-selective response in transition metal dichalcogenides (TMDs). This approach overcomes the limitations of magnetic materials and it does not require an external magnetic field. We provide experimental evidence of photoinduced nonreciprocity in a monolayer WS2 pumped by circularly polarized (CP) light. Nonreciprocity stems from valley-selective exciton population, giving rise to nonlinear circular dichroism controlled by CP pump fields. Our experimental results reveal a significant effect even at room temperature, despite considerable intervalley-scattering, showing promising potential for practical applications in magnetic-free nonreciprocal platforms. As an example, here we propose a device scheme to realize an optical isolator based on a pass-through silicon nitride (SiN) ring resonator integrating the optically biased TMD monolayer.

Band engineering in epitaxial monolayer transition metal dichalcogenides alloy MoxW1−xSe2 thin films

2020 ◽  
Vol 116 (19) ◽  
pp. 193101
Author(s):  
Xuedong Xie ◽  
Yunjing Ding ◽  
Junyu Zong ◽  
Wang Chen ◽  
Jingyi Zou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Engineering ◽  
Metal Dichalcogenides

Spatially controlled lateral heterostructures of graphene and transition metal dichalcogenides toward atomically thin and multi-functional electronics

Nanoscale ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 5286-5292 ◽  
Author(s):  
Gwangwoo Kim ◽  
Hyeon Suk Shin
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Scale Growth ◽  
Wafer Scale ◽  
Practical Applications ◽  
Key Technologies ◽  
Metal Dichalcogenides

This review demonstrates growth and electronic applications of lateral heterostructures of graphene and TMDs, highlighting key technologies controlling wafer-scale growth of continuous films for practical applications.

Recent Progress in Atomic Layer Deposition of Multifunctional Oxides and Two-Dimensional Transition Metal Dichalcogenides

2016 ◽  
Vol 04 (04) ◽  
pp. 1640010 ◽  
Author(s):  
Hongfei Liu
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Recent Progress ◽  
Transition Metal Dichalcogenides ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
Metal Dichalcogenides ◽  
Multifunctional Oxides

Atomic layer deposition (ALD) has long been developed for conformal coating thin films on planar surfaces and complex structured substrates based on its unique sequential process and self-limiting surface chemistry. In general, the coated thin films can be dielectrics, semiconductors, conductors, metals, etc., while the targeted surface can vary from those of particles, wires, to deep pores, through holes, and so on. The ALD coating technique, itself, was developed from gas-phase chemical vapor deposition, but now it has been extended even to liquid phase coating/growth. Because the thickness of ALD growth is controlled in atomic level ([Formula: see text]0.1[Formula: see text]nm), it has recently been employed for producing two-dimensional (2D) materials, typically semiconducting nanosheets of transition metal dichalcogenides (TMDCs). In this paper, we briefly introduce recent progress in ALD of multifunctional oxides and 2D TMDCs with the focus being placed on suitable ALD precursors and their ALD processes (for both binary compounds and ternary alloys), highlighting the remaining challenges and promising potentials.

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