FIB Micro-Pillar Sampling of Si Devices and its 3D Observation

2003 ◽  
Author(s):  
T. Yaguchi ◽  
T. Kamino ◽  
T. Ohnishi ◽  
T. Hashimoto ◽  
K. Umemura ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Limiting Factor ◽  
Sem Images ◽  
Cross Sectional ◽  
Scanning Transmission

Abstract A novel technique for three-dimensional structural and elemental analyses using a dedicated focused ion beam (FIB) and scanning transmission electron microscope (STEM) has been developed. The system employs an FIB-STEM compatible sample holder with sample stage rotation mechanism. A piece of sample (micro sample) is extracted from the area to be characterized by the micro-sampling technique [1-3]. The micro sample is then transferred onto the tip of the stage (needle stage) and bonded by FIB assisted metal deposition. STEM observation of the micro sample is carried out after trimming the sample into a micro-pillar 2-5 micron squared in cross-section and 10 -15 micron in length (micro-pillar sample). High angle annular dark field (HAADF) STEM, bright field STEM and secondary electron microscopy (SEM) images are obtained at 200kV resulting in threedimensional and cross sectional representations of the microsample. The geometry of the sample and the needle stage allows observation of the sample from all directions. The specific site can be located for further FIB milling whenever it is required. Since the operator can choose materials for the needle stage, the geometry of the original specimen is not a limiting factor for quantitative energy dispersive X-ray (EDX) analysis.

scholarly journals A FIB Micro-Sampling Technique for Three-Dimensional Characterization of a Site-Specific Defect

2004 ◽  
Vol 12 (6) ◽  
pp. 26-29 ◽  
Author(s):  
Toshie Yaguchi ◽  
Yasushi Kuroda ◽  
Mitsuru Konno ◽  
Takeo Kamino ◽  
Tsuyohsi Ohnishi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Three Dimensional ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Specimen Preparation ◽  
Specimen Holder ◽  
Scanning Transmission ◽  
A Site

In characterization or failure analysis of new materials and semiconductor devices, the requirements for three dimensional observation and analysis are rapidly increasing. We discuss techniques for specimen preparation, three-dimensional observation, and elemental analysis of semiconductor devices that we developed using a system consisting of a dedicated focused ion beam (FIB) instrument and a scanning transmission electron microscope (STEM). The system utilizes a FIB-STEM compatible specimen holder with a specially designed rotation mechanism, which allows 360° rotation of a specimen on a conical stage (needle stub) around the ion beam axis of the FIB system and 360° rotation perpendicular to the electron beam in the STEM. A piece of sample (micro sample) is extracted from a specific-site by the micro-sampling technique and mounted on the needle stub. Instruments used in the study are the Hitachi FB-2100 FIB system with a micro-sampling attachment and the HD-2300 field emission 200kV STEM.

scholarly journals An Analysis of Li Ion Secondary Battery Materials by Using Focused Ion Beam Micro-sampling Technique and Cold Field Emission Scanning Transmission Electron Microscope

2010 ◽  
Vol 16 (S2) ◽  
pp. 214-215
Author(s):  
T Tanigaki ◽  
K Ito ◽  
K Nakamura ◽  
Y Nagakubo ◽  
J Azuma ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Battery Materials ◽  
Secondary Battery ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Li Ion

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

3D Observation of Elemental Distribution of Si-Device using a Dedicated FIB/STEM System

2005 ◽  
Author(s):  
T. Yaguchi ◽  
M. Konno ◽  
T. Kamino ◽  
M. Ogasawara ◽  
K. Kaji ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Elemental Distribution ◽  
Multivariate Statistical ◽  
X Ray ◽  
Sample Rotation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elemental Maps

Abstract A technique for preparation of a pillar shaped sample and its multi-directional observation of the sample using a focused ion beam (FIB) / scanning transmission electron microscopy (STEM) system has been developed. The system employs an FIB/STEM compatible sample rotation holder with a specially designed rotation mechanism, which allows the sample to be rotated 360 degrees [1-3]. This technique was used for the three dimensional (3D) elemental mapping of a contact plug of a Si device in 90 nm technology. A specimen containing a contact plug was shaped to a pillar sample with a cross section of 200 nm x 200 nm and a 5 um length. Elemental analysis was performed with a 200 kV HD-2300 STEM equipped with the EDAX genesis Energy dispersive X-ray spectroscopy (EDX) system. Spectrum imaging combined with multivariate statistical analysis (MSA) [4, 5] was used to enhance the weak X-ray signals of the doped area, which contain a low concentration of As-K. The distributions of elements, especially the dopant As, were successfully enhanced by MSA. The elemental maps were .. reconstructed from the maps.

scholarly journals Stem-EDX and FIB-SEM Tomography of ALLVAC 718Plus Superalloy

2016 ◽  
Vol 61 (2) ◽  
pp. 535-542 ◽  
Author(s):  
A. Kruk ◽  
G. Cempura ◽  
S. Lech ◽  
A. Czyrska -Filemonowicz
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
High Strength ◽  
Strengthening Mechanism ◽  
Scanning Transmission Electron Microscope ◽  
Particle Analysis ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Allvac 718Plus (718Plus) is a high strength, corrosion resistant nickel- based superalloy used for application in power generation, aeronautics and aerospace industry. The 718Plus microstructure consists of a γ matrix with γ’-Ni3(Al,Ti) and some δ- Ni3Nb phases as well as lamellar particles (η-Ni3Ti, η*-Ni6AlNb or Ni6(Al,Ti)Nb) precipitated at the grain boundaries. The primary strengthening mechanism for this alloy is a precipitation hardening, therefore size and distribution of precipitates are critical for the performance of the alloy. The aim of this study was to characterize precipitates in the 718Plus superalloy using Scanning Transmission Electron Microscope combined with Energy Dispersive X-ray Spectroscopy (STEM-EDX) and Focused Ion Beam Scanning Electron Microscope (FIB-SEM). The STEM-EDX and FIB-SEM tomography techniques were used for 3D imaging and metrology of the precipitates. Transmission electron microscopy and EDX spectroscopy were used to reveal details of the 718Plus microstructure and allow determine chemical composition of the phases. The study showed that electron tomography techniques permit to obtain complementary information about microstructural features (precipitates size, shape and their 3D distribution) in the reconstructed volume with comparison to conventional particle analysis methods, e.g. quantitative TEM and SEM metallography

FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si

2016 ◽  
Vol 22 (1) ◽  
pp. 131-139 ◽  
Author(s):  
Katharina I. Gries ◽  
Katharina Werner ◽  
Andreas Beyer ◽  
Wolfgang Stolz ◽  
Kerstin Volz
Keyword(s):  
Focused Ion Beam ◽  
Driving Forces ◽  
Electron Tomography ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Scanning Transmission Electron Microscope ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Plan View ◽  
Investigation Methods

AbstractMelt-back etching is an effect that can occur for gallium (Ga) containing III/V semiconductors grown on Si. Since this effect influences interfaces between the two compounds and therefore the physical characteristics of the material composition, it is desirable to understand its driving forces. Therefore, we investigated Ga grown on Si (001) via metal organic chemical vapor deposition using trimethyl Ga as a precursor. As a result of the melt-back etching, Ga-containing droplets formed on the Si surface which reach into the Si wafer. The shape of these structures was analyzed by plan view investigation and cross sectional tomography in a (scanning) transmission electron microscope. For plan view preparation a focused ion beam was used to avoid damage to the Ga-containing structures, which are sensitive to the chemicals normally used during conventional plan view preparation. Combining the results of both investigation methods confirms that the Ga-containing structure within the Si exhibits a pyramid shape with facets along the Si {111} lattice planes.

The Method for Retaining an Intermittent Electrical Failure Signature during the Interconnect Immobilization Process throughout Failure Analysis

2009 ◽  
Author(s):  
Julie Schuchman ◽  
Julie Willis
Keyword(s):  
Sample Preparation ◽  
First Generation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Electrical Failure ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Material Sample

Abstract This paper deals primarily with the difficulties and solutions to scanning transmission electron microscope (STEM) sample preparation by dual beam focused ion beam. Approximately twenty major challenges were encountered spanning hardware, software, and material sample preparation. The main focus is upon the variety of challenges which are encountered in trying to implement automated STEM and TEM sample fabrication with minimal operator input and the engineering solutions implemented to overcome these challenges. The automated STEM script has evolved significantly from the first generation attempt and is described in more detail in this paper. The mechanical, software, and materials challenges encountered are also presented. The paper highlights a mechanical issue with the ion aperture motor mechanism, which required extensive troubleshooting to fully diagnose and correct. A long standing software routine had to be modified to fully enable script automation by extending the beam dwell time of the automatic brightness contrast routine.

Scanning Electron Microscopy Observation of Interface Between Single Neurons and Conductive Surfaces

2016 ◽  
Vol 16 (4) ◽  
pp. 3383-3387 ◽  
Author(s):  
Toichiro Goto ◽  
Nahoko Kasai ◽  
Rick Lu ◽  
Roxana Filip ◽  
Koji Sumitomo
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Indium Tin Oxide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Neurons ◽  
Sem Images ◽  
Cross Sectional ◽  
Integrated Devices ◽  
Scanning Electron

Interfaces between single neurons and conductive substrates were investigated using focused ion beam (FIB) milling and subsequent scanning electron microscopy (SEM) observation. The interfaces play an important role in controlling neuronal growth when we fabricate neuron-nanostructure integrated devices. Cross sectional images of cultivated neurons obtained with an FIB/SEM dual system show the clear affinity of the neurons for the substrates. Very few neurons attached themselves to indium tin oxide (ITO) and this repulsion yielded a wide interspace at the neuron-ITO interface. A neuron-gold interface exhibited partial adhesion. On the other hand, a neuron-titanium interface showed good adhesion and small interspaces were observed. These results are consistent with an assessment made using fluorescence microscopy. We expect the much higher spatial resolution of SEM images to provide us with more detailed information. Our study shows that the interface between a single neuron and a substrate offers useful information as regards improving surface properties and establishing neuron-nanostructure integrated devices.

Quantification of Microstructural and Transport Properties of Solid Oxide Fuel Cells From Three-Dimensional Physically Realistic Network Structures

2011 ◽  
Author(s):  
Naga Siva Kumar Gunda ◽  
Sushanta K. Mitra
Keyword(s):  
Transport Properties ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Solid Oxide ◽  
Network Structures ◽  
Oxide Fuel ◽  
Lanthanum Strontium Manganite ◽  
Cross Sectional ◽  
Effective Transport

The present work investigated a new method of calculating effective transport properties of solid oxide fuel cell (SOFC) electrodes from three-dimensional (3D) physically realistic network structures. These physically realistic network structures are topological equivalent representations of reconstructed microstructures in the form of spheres (nodes or bodies) and cylinders (segments or throats). Maximal ball algorithm is used to extract these physically realistic network structures from the series of two-dimensional (2D) cross-sectional images of SOFC electrodes. Dual-beam focused ion beam - scanning electron microscopy (FIB-SEM) is performed on SOFC electrodes to acquire series of 2D cross-sectional images. Finite element method is implemented to compute the effective transport properties from the network structures. As an example, we applied this method to calculate the effective gas diffusivity of lanthanum strontium manganite (LSM) of SOFC. The results obtained from physically realistic network structures are compared with reconstructed 3D microstructures.

Rapid and Semi-automated Method for Analysis of the Number of Atoms of Ultra-small Platinum Clusters on Carbon

2000 ◽  
Vol 6 (4) ◽  
pp. 353-357
Author(s):  
J.C. Yang ◽  
S. Bradley ◽  
J.M. Gibson
Keyword(s):  
Three Dimensional ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Spectroscopic Technique ◽  
Automated Method ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
Dimensional Shape ◽  
Three Dimensional Shape

Abstract Very high angle (~100 mrad) annular dark-field (HAADF) images in a dedicated scanning transmission electron microscope (STEM) can be used to quantitatively measure the number of atoms in a cluster on a support material. We have developed a computer program which will automatically find the location of the particles and then integrate the intensity to find the number of atoms per cluster. We have examined ultra-small Pt clusters on a C substrate by this novel mass-spectroscopic technique. We discovered that the Pt clusters maintain their three-dimensional shape, and are probably spherical.

Investigation of Cell-Sensor Hybrid Structures by Focused Ion Beam (FIB) Technology

2006 ◽  
Vol 983 ◽  
Author(s):  
Andreas Heilmann ◽  
Frank Altmann ◽  
Andreas Cismak ◽  
Werner Baumann ◽  
Mirko Lehmann
Keyword(s):  
Cross Section ◽  
Mammalian Cells ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Nerve Cells ◽  
Cross Sectional ◽  
Dimensional Reconstruction ◽  
The Cross ◽  
Silicon Interface

AbstractFor the investigation of the adhesion of mammalian cells on a semiconductor biosensor structure, nerve cells on silicon neurochips were prepared for scanning electron microscopy investigations (SEM) and cross-sectional preparation by focused ion beam technology (FIB). The cross-sectional pattern demonstrates the focal adhesion points of the nerve cells on the chip. Finally, SEM micrographs were taken parallel to the FIB ablation to investigate the cross section of the cells slice by slice in order to demonstrate the spatial distribution of focal contact positions for a possible three-dimensional reconstruction of the cell-silicon interface.

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