scholarly journals Using In-Situ TEM to Investigate the Role of Lithium Iodide Addition to Lithium Thiophosphate

2021 ◽  
Vol 27 (S1) ◽  
pp. 3426-3427
Author(s):  
Nikhilendra Singh ◽  
James Horwath ◽  
Timothy Arthur ◽  
Daan Hein Alsem ◽  
Marm Dixit ◽  
...  
Keyword(s):  
In Situ Tem ◽  
Lithium Iodide

Clarifying the Role of Mg2Si and Si in Localized Corrosion of Aluminum Alloys by Quasi In Situ Transmission Electron Microscopy

CORROSION ◽  
10.5006/3457 ◽  
2020 ◽  
Vol 76 (5) ◽  
pp. 464-475 ◽  
Author(s):  
Shravan K. Kairy ◽  
Nick Birbilis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Magnesium Silicide ◽  
Localized Corrosion ◽  
In Situ Tem ◽  
Al Alloy ◽  
Transmission Electron ◽  
Al Matrix

The role of magnesium silicide (Mg2Si) and silicon (Si) particles in the localized corrosion of aluminum (Al) alloys was investigated herein. Sub-micrometer-sized Mg2Si and Si particles were grown in the Al matrix of Al-Mg-Si and Al-Si alloys, respectively, and characterized by transmission electron microscopy (TEM). A quasi in situ TEM technique was used to study an identical location containing Mg2Si or Si particle in the Al matrix, prior to and following a period of immersion in 0.1 M NaCl at pH 6, 2, and 12. At pH 6 and 2, Mg2Si was initially “anodic,” preferentially dealloying via selective dissolution of Mg, resulting in the development of SiO-rich remnants that are electrochemically inert. The SiO-rich remnants at pH 2 physically detached from the Al matrix. Silicon particles were electrochemically inert at pH 6, while “cathodic” at pH 2, dissolving the Al matrix at their periphery. It was observed that copper (Cu) was redeposited on Si particles at pH 2. At pH 12, Mg2Si and Si were “cathodic” to the Al matrix. This study clarifies, and provides new insights into, the characteristics of Al alloy physical manifestation of corrosion associated with Mg2Si and Si at the nanoscale.

New role of screw dislocation in twin lamella during deformation: An in situ TEM study at the atomic scale

2018 ◽  
Vol 729 ◽  
pp. 125-129 ◽  
Author(s):  
Zongde Kou ◽  
Yanqing Yang ◽  
Lixia Yang ◽  
Bin Huang ◽  
Yanxia Chen ◽  
...  
Keyword(s):  
Screw Dislocation ◽  
Atomic Scale ◽  
In Situ Tem ◽  
Twin Lamella

In-Situ TEM study of the role of secondary grain boundary dislo-cations in grain boundary migration and atom source/sink action

1987 ◽  
Vol 45 ◽  
pp. 276-279
Author(s):  
S. E. Babcock ◽  
R. W. Balluffi
Keyword(s):  
Grain Boundary ◽  
Boundary Migration ◽  
Special Property ◽  
In Situ Tem ◽  
Grain Boundary Migration ◽  
The Past ◽  
Atom Source ◽  
Source Sink

Over the past several years, a wealth of experimental evidence concerning the structure of simple grain boundaries (GBs) in metals has accumulated which suggests that the GBD/SU description of GB structure is applicable, at least at some level, to GBs in general. According to this model, high-angle GBs contain intrinsic arrays of grain boundary dislocations (GBDs) possessing Burgers vectors (b) which are translation vectors of an appropriate DSC-lattice, arranged in a network which is consistent with Frank's formula.A special property of secondary GBDs (SGBDs), i.e., GBDs possessing bs which are not lattice vectors of either of the adjoining crystals, is that a step in the boundary plane is often associated with their core.

Damage Evolution and Annealing of Au-Irradiated Samarium Titanate Pyrochlore

2003 ◽  
Vol 792 ◽  
Author(s):  
Y. Zhang ◽  
V. Shutthanandan ◽  
S. Thevuthasan ◽  
D. E. McCready ◽  
J. Young ◽  
...  
Keyword(s):  
Damage Evolution ◽  
Thermal Recovery ◽  
Nonlinear Dependence ◽  
Nuclear Reaction Analysis ◽  
In Situ Tem ◽  
Predominant Role ◽  
Recovery Stage ◽  
Transmission Electron

ABSTRACTDamage evolution and thermal recovery of 1 MeV Au2+ irradiated samarium titanate pyrochlore (Sm2Ti2O7) single crystals were studied by Rutherford backscattering spectroscopy and nuclear reaction analysis. The damage accumulation follows a nonlinear dependence on dose that is well described by a disorder accumulation model, which indicates a predominant role of defect-stimulated amorphization processes. The critical dose for amorphization at 170 and 300 K is ∼0.14 dpa, and a higher dose of ∼ 0.22 dpa is observed for irradiation at 700 K, which agrees with previous in-situ transmission electron microscopy (TEM) data for polycrystalline Sm2Ti2O7. Annealing in an 18O environment reveals a damage recovery stage at ∼ 850 K that coincides with a significant increase in 18O exchange due to oxygen vacancy mobility. This thermal recovery stage is also consistent with the critical temperature for amorphization measured by in-situ TEM in polycrystalline samples.

Role of Ultra Thin SiOx Layer on Epitaxial YSZ/SiOx/Si Thin Film as Multi Functional Buffer Layer by Nano-Probe and In-Situ TEM Investigation

2002 ◽  
Vol 45 (1) ◽  
pp. 89-96 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
In Situ Tem ◽  
Si Thin Film

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

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