E-band cavity diplexer based on micromachined technology

2015 ◽  
Vol 8 (2) ◽  
pp. 179-184 ◽  
Author(s):  
Valeria Nocella ◽  
Luca Pelliccia ◽  
Paola Farinelli ◽  
Roberto Sorrentino ◽  
Mario Costa ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Radio Link ◽  
Next Generation ◽  
Frequency Range ◽  
Coupled Cavities ◽  
Future Production ◽  
Band Pass ◽  
Manufacturing Tolerances ◽  
Manufacturing Yield ◽  
Better Than

A robust and tuneless micromachined waveguide diplexer operating in the frequency range 71–86 GHz is here presented. The diplexer is based on multiple coupled cavities and it is manufactured using micromachining technology on two staked silicon layers. The diplexer consists of two filters combined to a common waveguide port via an E-plane T-junction. The two eight-order band-pass filters are centered at 73.5 and 83.5 GHz. The fractional bandwidths for two bands are 8.8 and 7.8% at higher- and lower-band, respectively. The measured insertion loss is below 0.7 dB for both the filters and the diplexer isolation is better than 55 dB, as required. The proposed technology allows for a very compact device (<20 × 20 × 1.5 mm) and the first prototypes were proved to be very robust to manufacturing tolerances and environmental tests, thus leading to an excellent tuneless manufacturing yield in future production. The diplexer will be employed in next generation terrestrial radio-link communications front-ends.

scholarly journals Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 270
Author(s):  
Yi-Fan Tsao ◽  
Joachim Würfl ◽  
Heng-Tung Hsu
Keyword(s):  
Insertion Loss ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Conventional Approach ◽  
High Electron ◽  
Frequency Range ◽  
Fractional Bandwidth ◽  
High Electron Mobility ◽  
State Capacitance ◽  
Better Than

In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.

Compact transition from CBCPW to substrate integrated suspended line (SISL) for operation up to 46 GHz

2019 ◽  
Vol 12 (2) ◽  
pp. 116-119
Author(s):  
F. Parment ◽  
A. Ghiotto ◽  
T.-P. Vuong ◽  
L. Carpentier ◽  
K. Wu
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Coplanar Waveguide ◽  
Experimental Results ◽  
Frequency Range ◽  
Better Than

AbstractA compact transition between conductor-backed coplanar waveguide (CBCPW) and substrate integrated suspended line (SISL) is presented. Compared to the reported transitions from CBCPW to SISL, performance and compactness are improved. For demonstration purpose, a multilayer transition is designed and fabricated for operation up to 46 GHz. Experimental results, based on an electronic calibration and thru–reflect–line calibration allowing measurement in the 0.01–50 GHz frequency range, demonstrate an insertion loss of 0.59 ± 0.51 dB with a return loss of better than 10 dB in the 10 MHz to 46 GHz frequency range.

The study of a high-isolation single-pole-double-throw RF MEMS switch

2018 ◽  
Vol 32 (30) ◽  
pp. 1850362
Author(s):  
Lei Han ◽  
Shen Xiao
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Frequency Range ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Thermal Actuators ◽  
Measurement Results ◽  
Better Than

In this paper, design, fabrication and measurements of a novel single-pole-double-throw three-state RF MEMS switch based on silicon substrate are presented. The RF MEMS switch consists of two UV-shaped beam push–pull thermal actuators which have three states of ON, OFF and Deep-OFF by using current actuation. When the switch is at Deep-OFF state, it can provide a higher isolation. The switch is fabricated by MetalMUMPs process. The measurement results show that, to the proposed single-pole-double-throw RF MEMS switch, when Switch I is at the ON state and Switch II is at the OFF state, the return loss is better than −16 dB, the insertion loss of Port1 and Port2 is less than −0.9 dB and the isolation of Port3 and Port1 is better than −22 dB at the frequency range from 8 GHz to 12 GHz. When Switch I is at the ON state and the actuator of Switch II is pulled back, which is called the Deep-OFF state, the return loss of Port1 is better than −15.5 dB, the insertion loss of Port1 and Port2 is better than −0.8 dB, and the isolation of Port3 and Port1 is better than −23.5 dB can be achieved at the frequency range from 8 GHz to 12 GHz.

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

2010 ◽  
Vol 2 (3-4) ◽  
pp. 333-339 ◽  
Author(s):  
Flavia Crispoldi ◽  
Alessio Pantellini ◽  
Simone Lavanga ◽  
Antonio Nanni ◽  
Paolo Romanini ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Mems Devices ◽  
Frequency Range ◽  
Gan Hemt ◽  
Better Than

Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

A Wideband Bandpass Filter Integrated Single-Pole Double-Throw Switch with Wide Stopband

Frequenz ◽  
2018 ◽  
Vol 72 (11-12) ◽  
pp. 533-537 ◽  
Author(s):  
Jin Xu ◽  
Qi-Hang Cai ◽  
Zhi-Yu Chen
Keyword(s):  
Insertion Loss ◽  
Bandpass Filter ◽  
Fractional Bandwidth ◽  
Central Frequency ◽  
Resonant Frequencies ◽  
Capacitively Coupled ◽  
Filter Theory ◽  
Compact Size ◽  
Better Than ◽  
Coupled Resonator

Abstract This paper proposes a wideband bandpass filter (BPF) integrated single-pole double-throw (SPDT) switch by using the capacitively coupled LC resonators with loaded p-i-n diodes. The BPF-integrated on-state channel can be synthesized by using the coupled resonator filter theory, and the off-state channel with high suppression is built due to the misaligned resonant frequencies of LC resonators. As an example, a BPF-integrated SPDT switch is designed and fabricated with the central frequency of 1 GHz and the 3 dB fractional bandwidth of 29.7 %. The on-state channel has a measured insertion loss of 1.23 dB, and a 20 dB rejection wide stopband from 1.47 GHz to 8.6 GHz. The off state channel has a 43 dB suppression around 1 GHz. The isolation between two ports is better than 52.4 dB. The fabricated BPF-integrated SPDT switch size including bias circuits but excluding feeding lines has a compact size of 0.086 λg×0.096 λg.

scholarly journals Dual band Stepped Impedance Interdigital Microstrip Filter for LTE Bands

2019 ◽  
Vol 4 (7) ◽  
pp. 28-30
Author(s):  
William Johnson ◽  
Cavin Roger Nunes ◽  
Savio Sebastian Dias ◽  
Siddhi Suresh Parab ◽  
Varsha Shantaram Hatkar
Keyword(s):  
Insertion Loss ◽  
Bandpass Filter ◽  
Dual Band ◽  
Band Pass Filter ◽  
Coupled Resonators ◽  
Microstrip Filter ◽  
Resonant Frequencies ◽  
Pass Filter ◽  
Band Pass ◽  
Low Insertion Loss

In this paper, a dual band microstrip bandpass filter has been proposed utilizing three edge coupled resonators, interdigital stubs and DGS technique. To enhance the coupling degree, two interdigital coupled feed lines are employed in this filter. The suppressing cell consists of stepped impedance ladder type resonators, which provides a wide stopband. The proposed suppressing cell has clear advantages like low insertion loss in the passband and suitable roll off. The frequency response of the filter looks like a standard dual band band-pass filter. The filter exhibits a dual passband with resonant frequencies at 2.2GHz and 3.45GHz covers LTE1 and LTE22 bands.

scholarly journals Study of Microstrip Dual-Band Band Pass Filter

2021 ◽  
Author(s):  
Anciline V ◽  
Maheswari S
Keyword(s):  
Wireless Communication ◽  
Insertion Loss ◽  
Communication System ◽  
Dual Band ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Wireless Communication System ◽  
Band Pass ◽  
Main Component

The main component widely used in wireless communication system is dual-band band pass filter. This band pass filter is intended in many ways and some are microstrip, waveguide, etc. The dual-band will works in two different frequency ranges which will provide a huge application. This paper compares different microstrip dual-band band pass filter based on the techniques, insertion loss, frequency, etc.

scholarly journals Design and Realization of Band Pass Filter in K-Band Frequency for Short Range Radar Application

2021 ◽  
Vol 21 (1) ◽  
pp. 1
Author(s):  
Arie Setiawan ◽  
Taufiqqurrachman Taufiqqurrachman ◽  
Adam Kusumah Firdaus ◽  
Fajri Darwis ◽  
Aminuddin Rizal ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Short Range ◽  
Return Loss ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Frequency ◽  
Measurement Results ◽  
Band Pass ◽  
Bandwidth Analysis ◽  
K Band

Short range radar (SRR) uses the K-band frequency range in its application. The radar requires high-resolution, so the applied frequency is 1 GHz wide. The filter is one of the devices used to ensure only a predetermined frequency is received by the radar system. This device must have a wide operating bandwidth to meet the specification of the radar. In this paper, a band pass filter (BPF) is proposed. It is designed and fabricated on RO4003C substrate using the substrate integrated waveguide (SIW) technique, results in a wide bandwidth at the K-band frequency that centered at 24 GHz. Besides the bandwidth analysis, the analysis of the insertion loss, the return loss, and the dimension are also reported. The simulated results of the bandpass filter are: VSWR of 1.0308, a return loss of -36.9344 dB, and an insertion loss of -0.6695 dB. The measurement results show that the design obtains a VSWR of 2.067, a return loss of -8.136 dB, and an insertion loss of -4.316  dB. While, it is obtained that the bandwidth is reduced by about 50% compared with the simulation. The result differences between simulation and measurement are mainly due to the imperfect fabrication process.

scholarly journals EQUILIBRIUM OF ECOLOGY AND ENGLISH CHALLENGES FOR TOMORROW’S LEADERS: A STUDY

2017 ◽  
Vol 4 (1) ◽  
pp. 5-7
Author(s):  
Chinnadurai T ◽  
Nagaraj P
Keyword(s):  
Childhood Obesity ◽  
Transfer Students ◽  
Ecological System ◽  
Environmental Action ◽  
English Teacher ◽  
Air Conditioner ◽  
Next Generation ◽  
Language Classroom ◽  
Tsunami Earthquakes ◽  
Better Than

The vision of the greenish world refashions lightning into brownish ground. When our human minds enlarge, our souls and hearts become brownie and narrow. Our world is expected to face massive calamities which have already given enough signs to be aware of disasters like Tsunami, earthquakes, global warmingand less prime span of living. According to the poet W.H. Auden “a culture is no better than its woods”.Today’s children are being taught how to cut away the trees and build fine air conditioner rooms. Being an English teacher, one has the greatest responsibility in language classroom in molding the future leaders. If we do not care of our square classroom today, our circle globe will be no more for next generation. Only our four pillars of classroom are to shape our Earth. Students are facing many problems in indoor learning like attention difficulties, diminished use of sense, hyperactivity, and childhood obesity and disconnection from real things. English teacher has to have the efficiency to transfer students’ ability into positive environmental action to preserve our earth as over grown living areas. It’s our responsibility to grow our children with greenish perspective. This paper focuses how to develop our ecological system through English fortomorrow’s leaders.

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